PRELIMINARY RT3U11M Composite Transistor For high speed switching Silicon N-channel + P-channel MOSFET DESCRIPTION RT3U11M is a composite transistor built with OUTLINE DRAWING INK0001AX and INJ0001AX chips in SC-88 package. Unit：mm 2.1 ① ⑥ 0.65 ② ⑤ 0.65 ・Input impedance is high, and not necessary to consider a drive ③ ④ 0.2 1.25 FEATURE electric current. 2.0 ・Vth is low, and drive by low voltage is possible. Vth=0.6～1.2V ・Low on Resistance. Ron= 3.5 / 7Ω(Tr1/Tr2) TYP ・High speed switching. ・Small package for easy mounting. APPLICATION 0.13 0.65 0.9 high speed switching , Analog switching 0～0.1 *P-channel MOSFET Tr2’s minus sign is omitted ⑤ ⑥ TERMINAL CONNECTOR ①：SOURCE1 ②：GATE1 ③：DRAIN2 ④：SOURCE2 ⑤：GATE2 ⑥:DRAIN1 ④ Tr.1 Tr.2 ① ② JEITA：SC-88 ③ MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER RATING UNIT V VDSS Drain-source voltage 50 VGSS Gate-source voltage ±8 V ID Drain current 100 mA PD Total power dissipation（Ta=25℃） Tch Channel temperature Tstg Range of Storage temperature 150 mW ＋125 ℃ -55～＋125 ℃ MARKING 6 4 . １ .Ｕ１ １ ISAHAYA ELECTRONICS CORPORATION 5 2 3 PRELIMINARY RT3U11M Composite Transistor For high speed switching Silicon N-channel + P-channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Limits Test conditions Min Typ Max Unit Drain-source breakdown voltage I D=100μA, VGS=0V 50 - - V IGSS Gate-source leak current V GS=±5V, VDS=0V - - ±0.5 μA IDSS Zero gate voltage drain current V DS Vth Gate threshold voltage I D=250μA, V | Yfs | Forward transfer admittance V RDS(ON) Static drain-source on-state resistance I D=100mA, V Input capacitance V DS Output capacitance V DS Switching time V V V(BR)DSS Ciss Coss =50V ,VGS=0V DS= V =10V, I D=0.1A =4.0V GS GS =10V, V GS =0V,f=1MHz =0V,f=1MHz tON tOFF - 50 μA - 1.2 V Tr1 - 250 - Tr2 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 Tr1 Tr2 - 220 3.5 7.0 24 28 5.0 5.2 11 13 50 135 - GS DS =10V, V 0.6 =5V , I D=10mA =0～5V GS DD Switching time test condition ( Tr.1 ) test circuit OUT 5V 90% IN 5V RL 50Ω 0 input waveform 10% 0V VDD 10μs VDD VDD=5V D.U.≦1% Common source Ta=25℃ 10% output waveform 90% VDS(ON） tf tr toff ton Switching time test condition ( Tr.2 ) test circuit OUT IN 0 RL 50Ω -5V 10μs VDD=-5V D.U.≦1% Common source Ta=25℃ 0V input waveform 10% 90% -5V VDD VDS(ON） 90% output waveform 10% VDD ton ISAHAYA ELECTRONICS CORPORATION tf tr toff mS Ω pF pF ns TYPICAL CHARACTERISTICS ( Tr.1 ) Ta=25℃ ID -VDS 1 100 1.6V 1.5V 1.0V 0.95V 0.8 Drain current ID (mA) 80 Drain current ID (mA) ID -VDS(Low voltage region) Ta=25℃ 1.4V 60 1.3V 40 1.2V 20 0.6 0.4 0.2 1.1V 0 5 0.85V VGS=0.8V VGS=1.0V 0 0.9V 0 0 10 0.1 0.2 0.5 1000 100 Ta=25℃ VDS=10V Ta=25℃ VGS=0V Drain current ID (mA) Drain reverse current IDR (mA) 0.4 ID -VGS IDR -VDS 10 100 10 1 1 -0 -0.5 -1 -1.5 Drain-Source voltage VDS (V) 0 -2 1 2 3 Gate-Source voltage VGS (V) |Yfs| - ID 4 5 VDS(ON) - ID 1000 1000 Ta=25℃ VDS=10V Ta=25℃ VGS=4V Drain-Source ON voltage VDS(ON) (mV) Forward transfer admittance |Yfs| (mS) 0.3 Drain-Source voltage VDS (V) Drain-Source voltage VDS (V) 100 10 100 10 1 1 1 10 100 Drain current ID (mA) 1000 1 10 Drain current ID (mA) t - ID 100 C - VDS 10000 100 Ta=25℃ toff Ciss tf Capacitance C (pF) Switching time t (ns) 1000 100 ton 10 10 Coss Ta=25℃ VGS=0V tr 1 1 0.1 1 10 Drain current ID (mA) 100 0.1 1 10 Drain-Source voltage VDS (V) ISAHAYA ELECTRONICS CORPORATION 100 TYPICAL CHARACTERISTICS ( Tr.2 ) ID -VDS Ta=25℃ ID -VDS(Low voltage region) Ta=25℃ -100 -10 -1.6V -1.5V -8 -1.4V -60 -1.3V -40 -1.2V -20 -1.0V Drain current ID (mA) Drain current ID (mA) -80 -6 -0.95V -4 VGS=-0.9V -2 -1.1V -0.85V VGS=-1.0V -0.8V -0 -0 -0 -5 -10 -0 -0.1 Drain-Source voltage VDS (V) -0.2 -0.4 -0.5 -2 -3 -4 Gate-Source voltage VGS (V) -5 IDR -VDS ID -VGS -1000 Ta=25℃ VGS=0V Ta=25℃ VDS=-10V Drain current ID (mA) Drain reverse current IDR (mA) -100 -10 -100 -10 -1 -1 0 0.5 1 1.5 Drain-Source voltage VDS (V) -0 2 -1 |Yfs| - ID VDS(ON) - ID -1000 1000 Ta=25℃ VDS=-10V Drain-Source ON voltage VDS(ON)(mV) Forward transfet admittance |Yfs| (mS) -0.3 Drain-Source voltage VDS (V) 100 10 1 Ta=25℃ VGS=-4V -100 -10 -1 -1 -10 -100 Drain current ID (mA) -1000 -1 -10 Drain current ID (mA) -100 C - VDS t - ID 100 10000 Ta=25℃ 1000 tf Capacitance C (pF) Switching time t (ns) toff 100 10 ton Ciss 10 Ta=25℃ VGS=0V Coss tr 1 -0.1 -1 -10 Drain current ID (mA) -100 1 -0.1 -1 -10 Drain-Source voltage VDS (V) ISAHAYA ELECTRONICS CORPORATION -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Apr.2007