2SC5623 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-977 (Z) 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 26 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 Note: Marking is “WH-”. 1. Emitter 2. Collector 3. Emitter 4. Base 2SC5623 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 10 V Collector to emitter voltage VCEO 3.5 V Emitter to base voltage VEBO 1 V Collector current IC 12 mA Collector power dissipation Pc 50 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V(BR)CBO 10 — — V I C = 10 µA , IE = 0 Collector cutoff current I CBO — — 1 µA VCB = 8 V , IE = 0 Collector cutoff current I CEO — — 1 µA VCE = 3 V , RBE = ∞ Emitter cutoff current I EBO — — 10 µA VEB = 1 V , IC = 0 DC current transfer ratio hFE 60 100 140 V VCE = 2 V , IC = 10 mA Collector output capacitance Cob — 0.15 0.4 pF VCB = 2 V , IE = 0 f = 1 MHz Gain bandwidth product fT 23 26 — GHz VCE = 2 V , IC = 10 mA f = 2 GHz Power gain PG 14 18 — dB VCE = 2 V , IC = 10 mA f = 1.8 GHz Noise figure NF — 1.8 2.3 dB VCE = 2 V , IC = 3 mA f = 1.8 GHz 2 2SC5623 Main Characteristics DC Current Transfet Ratio vs. Collector Current 200 DC Current Transfer Ratio 150 100 50 100 150 Ambient Temperature (pF) 100 0 50 0 200 1 IE = 0 f = 1MHz 0.8 5 10 Collector Current Ta (°C) Collector Output Capacitance vs. Collector to Base Voltage 1.0 2 20 50 IC (mA) 100 Gain Bandwidth Product vs. Collector Current 50 VCE = 2 V 40 Gain Bandwidth Prodfuct Collector Output Capacitance fT Cob VCE = 2 V hFE 200 (GHz) Collector Power Dissipatio Pc (mW) Collector Power Dissipation Curve 0.6 0.4 0.2 0 0.1 0.2 0.5 1 2 Collector to Base Voltage 5 10 VCB (V) 30 20 10 0 1 2 5 10 Collector Current 20 50 100 I C (mA) 3 2SC5623 Power Gain vs. Collector Current Noise Figure vs. Collector Current 20 5 VCE = 2 V 8 NF (dB) 12 Noise Figure PG 16 Power Gain (dB) VCE = 2 V 4 f = 1.8GHz 4 3 2 1 f = 1.8GHz 0 1 0 2 5 10 20 Collector Current 50 100 16 S21 Parameter 2 |S21| (dB) VCE = 2 V 12 8 4 f = 2GHz 0 1 2 5 10 Collector Current 4 20 50 I C (mA) 2 5 10 Collector Current I C (mA) S21Parameter vs. Collector Current 20 1 100 20 50 I C (mA) 100 2SC5623 S21 Paramter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90 1.5 Scale: 6 / div. 60 120 2 .4 3 30 150 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180 0 −10 −5 −4 −.2 −3 −.4 −30 −150 −2 −.6 −.8 −1 −60 −120 −1.5 −90 Condition : V CE = 2 V , I C = 10 mA Condition : V CE = 2 V , I C = 10 mA 100 to 3000 MHz (100 MHz step) 100 to 3000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90 Scale: 0.02 / div. .8 60 120 1 .6 1.5 2 .4 3 30 150 4 5 .2 10 180 0 .2 0 .4 .6 .8 1 1.5 2 3 45 10 −10 −5 −4 −.2 −30 −150 −3 −.4 −120 −60 −90 Condition : V CE = 2 V , I C = 10 mA 100 to 3000 MHz (100 MHz step) −2 −.6 −.8 −1 −1.5 Condition : V CE = 2 V , I C = 10 mA 100 to 3000 MHz (100 MHz step) 5 2SC5623 Sparameter ( VCE = 2 V, IC = 10 mA, Zo = 50 Ω ) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.779 –6.9 21.32 173.3 0.0028 95.3 0.971 –3.6 200 0.773 –14.5 20.95 166.2 0.0064 92.6 0.971 –7.5 300 0.763 –22.9 20.35 158.9 0.0102 91.8 0.961 –12.1 400 0.741 –31.4 19.65 151.7 0.0142 87.0 0.941 –16.7 500 0.714 –38.7 18.72 145.2 0.0183 83.4 0.911 –20.8 600 0.679 –46.2 17.65 139.3 0.0222 79.7 0.876 –24.7 700 0.641 –53.6 16.61 133.9 0.0255 75.6 0.836 –27.9 800 0.601 –59.7 15.54 129.3 0.0286 72.7 0.795 –30.8 900 0.563 –65.6 14.54 124.4 0.0313 69.5 0.756 –33.1 1000 0.523 –70.7 13.62 120.5 0.0335 67.8 0.720 –34.9 1100 0.488 –75.0 12.78 117.1 0.0356 66.0 0.687 –36.5 1200 0.458 –80.1 12.05 114.1 0.0376 64.1 0.657 –37.5 1300 0.427 –83.8 11.36 111.0 0.0393 62.8 0.628 –38.4 1400 0.400 –88.9 10.64 108.5 0.0410 62.4 0.607 –38.9 1500 0.374 –91.9 10.15 106.0 0.0426 61.0 0.582 –39.6 1600 0.350 –96.1 9.59 104.0 0.0441 61.1 0.567 –39.8 1700 0.326 –100.1 9.14 101.7 0.0455 60.4 0.548 –40.2 1800 0.304 –102.9 8.68 100.1 0.0469 59.7 0.533 –40.2 1900 0.282 –107.0 8.29 98.1 0.0486 59.1 0.521 –40.5 2000 0.267 –110.8 7.93 96.1 0.0500 59.2 0.508 –40.5 2100 0.253 –115.2 7.62 94.4 0.0517 59.3 0.498 –40.5 2200 0.234 –118.7 7.30 92.6 0.0527 59.2 0.489 –40.7 2300 0.225 –122.1 7.03 91.0 0.0543 58.6 0.481 –40.6 2400 0.212 –127.9 6.76 89.6 0.0557 58.4 0.473 –40.7 2500 0.199 –131.8 6.54 88.8 0.0573 58.2 0.468 –40.5 2600 0.193 –135.2 6.31 86.8 0.0579 58.3 0.461 –40.7 2700 0.186 –141.9 6.11 85.4 0.0600 58.2 0.456 –40.4 2800 0.178 –146.0 5.89 84.2 0.0612 58.2 0.450 –40.6 2900 0.177 –151.4 5.73 82.7 0.0624 58.3 0.447 –40.5 3000 0.168 –157.0 5.56 81.4 0.0642 57.8 0.442 –40.9 6 2SC5623 Package Dimensions As of January, 2001 Unit: mm 0.1 0.3 +– 0.05 0.2 0.65 0.6 1.25 ± 0.2 0.9 ± 0.1 0.1 0.4 +– 0.05 0 – 0.1 0.425 0.1 0.3 +– 0.05 + 0.1 0.16– 0.06 2.1 ± 0.3 0.65 0.65 1.25 ± 0.1 0.1 0.3 +– 0.05 0.425 2.0 ± 0.2 1.3 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) CMPAK-4(T) — Conforms 0.006 g 7 2SC5623 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 8 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.