ＩＮＫ0003AＸ SERIES High speed switching Silicon N-channel MOSFET OUTLINE DRAWING DESCRIPTION INK0003AT2 (PRELIMINARY) 2.1 0.3 ② 0.425 ③ 0.15 ① 1.25 0～0.1 0.5 0.9 ③ 0.65 1.2 0.8 2.0 1.3 ② 0.2 0.25 0.4 ① 0.4 FEATURE 0.425 0.65 0.8 0.2 ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=0.6～1.2V ・Low on Resistance. Ron=0.9Ω(TYP) ・High speed switching. ・Small package for easy mounting. INK0003AM1 0.7 INK0003AX is a Silicon N-channel MOSFET. This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance. Unit：mm APPLICATION high speed switching , Analog switching JEITA, JEDEC：－ ISAHAYA：T-USM JEITA：SC-70 JEDEC：－ TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN INK0003AU1 INK0003AC1 1.6 EQUIVALENT CIRCUIT 0.4 0.8 2.5 0.4 0.5 1.5 0.5 ② 0.4 0.95 ③ ① 0.95 2.9 1.90 ② 0.3 0.5 ① 1.6 1.0 G 0.5 D ③ JEITA：SC-75A JEDEC：－ TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN ISAHAYA ELECTRONICS CORPORATION 0.16 0～0.1 0.8 1.1 0.15 0～0.1 0.55 0.7 S JEITA：SC-59 JEDEC：Similar to TO-236 T TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN ＩＮＫ0003AＸ SERIES High speed switching Silicon N-channel MOSFET MAXIMUM RATING（Ｔａ＝２５℃） SYMBOL PARAMETER ＶDSS ＶGSS Ｉ D Drain-source voltage Gate-source voltage Drain current Total power dissipation （Ta=25℃） Channel temperature Range of Storage temperature ＰＤ Ｔch Ｔｓｔｇ RATING INK0003AU1 INK0003AM1 20 ±8 200 INK0003AT2 125（※） 150 +125 -55～+125 ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃） 200 mW ℃ ℃ ※package mounted on 9mm×19mm×1mm glass-epoxy substrate. PARAMETER V(BR)DSS IGSS IDSS Vth | Yfs | Drain-source breakdown voltage I D=100μA, V Gate-source leak current V GS Zero gate voltage drain current V DS Gate threshold voltage I D=250μA, V Forward transfer admittance Static drain-source on-state resistance Input capacitance V V DS GS =0V,f=1MHz Output capacitance V DS=10V, V GS=0V,f=1MHz Switching time V V Ciss Coss tON tOFF V V mA +150 -55～+150 SYMBOL RDS(ON) UNIT INK0003AC1 TEST CONDITION =0V GS MIN 20 LIMIT TYP - MAX - - - ±0.5 μA =±5V, VDS=0V =20V ,VGS=0V UNIT V - - 50 μA 0.6 - 1.2 V - 300 - mS - 0.9 - Ω - 34 - pF - 8.5 - pF DD - 14 - GS - 85 - DS= V GS =10V, I D=0.1A DS I D=100mA, V =10V, V =4.0V GS =5V , I D = 10mA =0～5V ns Switching time test condition test circuit OUT 5V 90% IN 5V RL 50Ω 0 10μs VDD=5V D.U.≦1% Common source Ta=25℃ input waveform 10% 0V VDD VDD 10% output waveform 90% VDS(ON） tf tr ton ISAHAYA ELECTRONICS CORPORATION toff TYPICAL CHARACTERISTICS ID -VDS Ta=25℃ ID -VDS(Low voltage region) Ta=25℃ 100 1 1.6V 1.5V 1.0V 1.4V 0.8 Drain current ID (mA) Drain current ID (mA) 80 60 1.3V 40 1.2V 20 0.95V 0.6 0.4 0.9V 0.2 0 0 2 4 6 1.1V 0.85V VGS=1.0V VGS=0.8V 0 8 10 0 0.1 Drain-Source voltage VDS (V) 0.2 IDR -VDS 0.5 4 5 1000 Ta=25℃ VDS=10V Ta=25℃ VGS=0V Drain current ID (mA) Drain reverse current IDR (mA) 0.4 ID -VGS 100 10 100 10 1 1 -0 -0.5 -1 -1.5 -2 0 1 Drain-Source voltage VDS (V) 2 3 Gate-Source voltage VGS (V) |Yfs| - ID VDS(ON) -ID 1000 1000 Ta=25℃ VGS=4V Ta=25℃ VDS=10V Drain-Source ON voltage VDS(ON) (mV) Forward transfer admittance |Yfs| (mS) 0.3 Drain-Source voltage VDS (V) 100 10 1 100 10 1 0.1 1 10 100 1000 1 10 Drain current ID (mA) 100 Drain current ID (mA) t - ID C - VDS 10000 100 Ta=25℃ Ciss 1000 tｆ Capacitance C (pF) Switching time t (ns) toff 100 ton 10 10 Coss Ta=25℃ VGS=0V tr 1 1 0.1 0.1 1 10 100 1 10 Drain-Source voltage VDS (V) Drain current ID (mA) ISAHAYA ELECTRONICS CORPORATION 100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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