RT3K33M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K33M is a composite transistor built with two INK0003AX OUTLINE DRAWING chips in SC-88 package. Unit：mm 2.1 ① ⑥ 0.65 ② ⑤ 0.65 ・Input impedance is high, and not necessary to consider a drive ③ ④ 0.2 1.25 FEATURE electric current. 2.0 ・Vth is low, and drive by low voltage is possible. Vth=0.6～1.2V ・Low on Resistance. Ron=0.9Ω(TYP) ・High speed switching. ・Small package for easy mounting. APPLICATION 0.13 0～0.1 0.65 0.9 high speed switching , Analog switching ⑤ ⑥ TERMINAL CONNECTOR ①：SOURCE1 ②：GATE1 ③：DRAIN2 ④：SOURCE2 ⑤：GATE2 ⑥:DRAIN1 ④ Tr.1 Tr.2 ① ② JEITA：SC-88 ③ MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER RATING UNIT V VDSS Drain-source voltage 20 VGSS Gate-source voltage ±8 V ID Drain current 200 mA PD Total power dissipation（Ta=25℃） Tch Channel temperature Tstg Range of Storage temperature 150 mW ＋125 ℃ -55～＋125 ℃ MARKING 6 4 . ３ .Ｋ３ １ ISAHAYA ELECTRONICS CORPORATION 5 2 3 RT3K33M Composite Transistor For high speed switching Silicon N-channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Drain-source breakdown voltage I D=100μA, V IGSS Gate-source leak current V GS=±5V, VDS=0V IDSS Zero gate voltage drain current V DS Vth Gate threshold voltage I D=250μA, V Forward transfer admittance Static drain-source on-state resistance V V(BR)DSS | Yfs | Limits Test conditions =0V GS =20V ,VGS=0V DS= V GS =10V, I D=0.1A DS Max Typ 20 - - V - - ±0.5 μA - - 50 μA 0.6 - 1.2 V - 300 - mS - Ω pF pF Ciss Input capacitance I D=100mA, V GS=4.0V V DS=10V, V GS=0V,f=1MHz - 0.9 34 Coss Output capacitance V DS - 8.5 - Switching time V V DD =5V , I D = 10mA GS=0～5V - 14 - - 85 - RDS(ON) tON tOFF =10V, V =0V,f=1MHz GS Switching time test condition test circuit OUT 5V 90% IN 5V RL 50Ω 0 10μs VDD=5V D.U.≦1% Common source Ta=25℃ input waveform 10% 0V VDD VDD 10% output waveform 90% VDS(ON） ISAHAYA ELECTRONICS CORPORATION tf tr ton Unit Min toff ns TYPICAL CHARACTERISTICS ID -VDS Ta=25℃ ID -VDS(Low voltage region) Ta=25℃ 100 1 1.6V 1.5V 1.0V 1.4V 0.8 Drain current ID (mA) Drain current ID (mA) 80 60 1.3V 40 1.2V 20 0.95V 0.6 0.4 0.9V 0.2 0 0 2 4 6 1.1V 0.85V VGS=1.0V VGS=0.8V 0 8 10 0 0.1 Drain-Source voltage VDS (V) 0.2 IDR -VDS 0.5 4 5 1000 Ta=25℃ VDS=10V Ta=25℃ VGS=0V Drain current ID (mA) Drain reverse current IDR (mA) 0.4 ID -VGS 100 10 100 10 1 1 -0 -0.5 -1 -1.5 -2 0 1 Drain-Source voltage VDS (V) 2 3 Gate-Source voltage VGS (V) |Yfs| - ID VDS(ON) -ID 1000 1000 Ta=25℃ VGS=4V Ta=25℃ VDS=10V Drain-Source ON voltage VDS(ON) (mV) Forward transfer admittance |Yfs| (mS) 0.3 Drain-Source voltage VDS (V) 100 10 1 100 10 1 0.1 1 10 100 1000 1 10 Drain current ID (mA) 100 Drain current ID (mA) t - ID C - VDS 10000 100 Ta=25℃ Ciss 1000 tｆ Capacitance C (pF) Switching time t (ns) toff 100 ton 10 10 Coss Ta=25℃ VGS=0V tr 1 1 0.1 0.1 1 10 100 1 10 Drain-Source voltage VDS (V) Drain current ID (mA) ISAHAYA ELECTRONICS CORPORATION 100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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