PRELIMINARY RT3J11M Composite Transistor For high speed switching Silicon Ｐ-channel MOSFET DESCRIPTION RT3J11M is a composite transistor built with two INJ0001AX OUTLINE DRAWING chips in SC-88 package. Unit：mm 2.1 2.0 ・Vth is low, and drive by low voltage is possible. Vth=0.6～1.2V ・Low on Resistance. Ron=7Ω(TYP) ・High speed switching. ① ⑥ 0.65 electric current. ② ⑤ 0.65 ・Input impedance is high, and not necessary to consider a drive ③ ④ 0.2 1.25 FEATURE ・Small package for easy mounting. APPLICATION 0.13 0～0.1 0.65 0.9 high speed switching , Analog switching ⑤ ⑥ TERMINAL CONNECTOR ①：SOURCE1 ②：GATE1 ③：DRAIN2 ④：SOURCE2 ⑤：GATE2 ⑥:DRAIN1 ④ Tr.1 Tr.2 ① ② JEITA：SC-88 ③ MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER RATING UNIT -50 V VDSS Drain-source voltage VGSS Gate-source voltage ±8 V ID Drain current -100 mA PD Total power dissipation（Ta=25℃） Tch Channel temperature Tstg Range of Storage temperature 150 mW ＋125 ℃ -55～＋125 ℃ MARKING 6 4 . １ .Ｊ１ １ ISAHAYA ELECTRONICS CORPORATION 5 2 3 PRELIMINARY RT3J11M Composite Transistor For high speed switching Silicon Ｐ-channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Drain-source breakdown voltage I D=-100μA, VGS=0V IGSS Gate-source leak current V GS=±5V, VDS=0V IDSS Zero gate voltage drain current V DS Vth Gate threshold voltage I D=-250μA, V Forward transfer admittance Static drain-source on-state resistance V V(BR)DSS | Yfs | Limits Test conditions =-50V ,VGS=0V DS= V GS =-10V, I D=-0.1A DS Max Typ -50 - - V - - ±0.5 μA - - -50 μA -0.6 - -1.2 V - 220 - mS - Ω pF pF Ciss Input capacitance I D=-100mA, V GS=-4.0V V DS=-10V, V GS=0V,f=1MHz - 7 28 Coss Output capacitance V DS - 5.2 - Switching time V V DD=-5V , I D=-10mA GS=0～-5V - 13 - - 135 - RDS(ON) tON tOFF =-10V, V =0V,f=1MHz GS ns Switching time test condition test circuit OUT IN 0 RL 50Ω -5V 10μs VDD=-5V D.U.≦1% Common source Ta=25℃ 0V input waveform 10% 90% -5V VDD VDS(ON） 90% output waveform 10% VDD ISAHAYA ELECTRONICS CORPORATION tf tr ton Unit Min toff TYPICAL CHARACTERISTICS ID -VDS Ta=25℃ ID -VDS(Low voltage region) Ta=25℃ -100 -10 -1.6V -1.5V -8 -1.4V -60 -1.3V -40 -1.2V -20 -1.0V Drain current ID (mA) Drain current ID (mA) -80 -6 -0.95V -4 VGS=-0.9V -2 -1.1V -0.85V VGS=-1.0V -0.8V -0 -0 -0 -5 -10 -0 -0.1 Drain-Source voltage VDS (V) -0.2 -0.4 -0.5 -2 -3 -4 Gate-Source voltage VGS (V) -5 IDR -VDS ID -VGS -1000 Ta=25℃ VGS=0V Ta=25℃ VDS=-10V Drain current ID (mA) Drain reverse current IDR (mA) -100 -10 -100 -10 -1 -1 0 0.5 1 1.5 Drain-Source voltage VDS (V) -0 2 -1 |Yfs| - ID VDS(ON) - ID -1000 1000 Ta=25℃ VDS=-10V Drain-Source ON voltage VDS(ON)(mV) Forward transfet admittance |Yfs| (mS) -0.3 Drain-Source voltage VDS (V) 100 10 1 Ta=25℃ VGS=-4V -100 -10 -1 -1 -10 -100 Drain current ID (mA) -1000 -1 -10 Drain current ID (mA) -100 C - VDS t - ID 100 10000 Ta=25℃ 1000 tf Capacitance C (pF) Switching time t (ns) toff 100 10 ton Ciss 10 Ta=25℃ VGS=0V Coss tr 1 -0.1 -1 -10 Drain current ID (mA) -100 1 -0.1 -1 -10 Drain-Source voltage VDS (V) ISAHAYA ELECTRONICS CORPORATION -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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