RoHS MMDT2222A MMDT2222A TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.15 Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 75 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter C Symbol Test conditions IC MIN V(BR)CBO Ic= 10µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 Collector cut-off current ICBO VCB=60V, IE=0 Emitter cut-off current IEBO VEB= 3V, IC=0 hFE(1) VCE=10V, IC= 0.1mA 35 hFE(2) VCE=10V, IC= 1mA 50 hFE(3) VCE=10V, IC= 10mA 75 hFE(4) VCE=10V, IC= 150mA 100 hFE(5) VCE=10V, IC= 500mA 40 hFE(6) VCE=1V, IC= 150mA 35 R T DC current gain C E L Collector-emitter saturation voltage Base-emitter saturation voltage E J E Output Capacitance Input Capacitance 40 V 6 V 0. 01 µA 0. 01 µA 300 V VCE(sat)2 IC=500 mA, IB= 50mA 1 V VBE(sat)1 IC=150 mA, IB=15mA 1.2 V VBE(sat)2 IC=500 mA, IB= 50mA 2 V fT NF td Rise time tr Storage time tS Fall time tf VCE=20V, IC= 20mA 300 f=100MHz VCB=10V, IE= 0 f=1MHz VEB=0.5V, IC= 0 f=1MHz VCE=10V, IC=100µA f=1KHz,Rs=1KΩ VCC=30V, IC=150mA VBE(off)=0.5V, IB1=15mA VCC=30V, IC=150mA IB1= IB2= 15mA 0.6 MHz 8 pF 25 pF 4 dB 10 nS 25 nS 225 nS 60 nS :K1P WEJ ELECTRONIC CO. V 0.3 Delay time Marking UNIT IC=150 mA, IB= 15mA Cib W O N 75 MAX VCE(sat)1 Cob Noise Figure O unless otherwise specified) Collector-base breakdown voltage Transition frequency D T ,. L W (Tamb=25℃) Http:// www.wej.cn E-mail:[email protected]