WINNERJOIN MMDT2222A

RoHS
MMDT2222A
MMDT2222A
TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
0.15
Collector current
ICM:
0.6
A
Collector-base voltage
V(BR)CBO:
75
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
C
Symbol
Test
conditions
IC
MIN
V(BR)CBO
Ic= 10µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB= 3V, IC=0
hFE(1)
VCE=10V, IC= 0.1mA
35
hFE(2)
VCE=10V, IC= 1mA
50
hFE(3)
VCE=10V, IC= 10mA
75
hFE(4)
VCE=10V, IC= 150mA
100
hFE(5)
VCE=10V, IC= 500mA
40
hFE(6)
VCE=1V, IC= 150mA
35
R
T
DC current gain
C
E
L
Collector-emitter saturation voltage
Base-emitter saturation voltage
E
J
E
Output Capacitance
Input Capacitance
40
V
6
V
0. 01
µA
0. 01
µA
300
V
VCE(sat)2
IC=500 mA, IB= 50mA
1
V
VBE(sat)1
IC=150 mA, IB=15mA
1.2
V
VBE(sat)2
IC=500 mA, IB= 50mA
2
V
fT
NF
td
Rise time
tr
Storage time
tS
Fall time
tf
VCE=20V, IC= 20mA
300
f=100MHz
VCB=10V, IE= 0
f=1MHz
VEB=0.5V, IC= 0
f=1MHz
VCE=10V, IC=100µA
f=1KHz,Rs=1KΩ
VCC=30V, IC=150mA
VBE(off)=0.5V, IB1=15mA
VCC=30V, IC=150mA
IB1= IB2= 15mA
0.6
MHz
8
pF
25
pF
4
dB
10
nS
25
nS
225
nS
60
nS
:K1P
WEJ ELECTRONIC CO.
V
0.3
Delay time
Marking
UNIT
IC=150 mA, IB= 15mA
Cib
W
O
N
75
MAX
VCE(sat)1
Cob
Noise Figure
O
unless otherwise specified)
Collector-base breakdown voltage
Transition frequency
D
T
,. L
W (Tamb=25℃)
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