Product Description SGA-6589 Stanford Microdevices SGA-6589 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-6589 requires only DC blocking and bypass capacitors for external components. Small Signal Gain vs. Frequency 30 25 dB 20 15 10 0 1 2 3 Frequency GHz Sy mbol Preliminary 4 5 DC-4000 MHz Silicon Germanium HBT Cascadeable Gain Block Product Features DC-4000 MHz Operation Single Voltage Supply High Output Intercept: +32.5dBm typ. at 850 MHz High Output Power : 21.5 dBm typ. at 850 MHz High Gain : 25.6 dB typ. at 850 MHz Applications Oscillator Amplifiers Final PA for Low Power Applications IF/ RF Buffer Amplifier Drivers for CATV Amplifiers Parameters: Test C onditions: Z0 = 50 Ohms, ID = 80 mA, T = 25oC U nits Min. Ty p. Output Power at 1dB C ompressi on f = 850 MHz f = 1950 MHz f = 2400 MHz dB m dB m dB m 21.5 19.0 17.8 IP3 Thi rd Order Intercept Poi nt Power out per tone = 0 dBm f = 850 MHz f = 1950 MHz f = 2400 MHz dB m dB m dB m 32.5 31.6 30.3 S 21 Small Si gnal Gai n f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 25.6 20.5 18.8 P 1dB Bandwi dth (D etermi ned by S11, S22 Values) Max. MHz 4000 S11 Input VSWR f = D C -4000 MHz - 1.60:1 S 22 Output VSWR f = D C -4000 MHz - 1.80:1 S 12 Reverse Isolati on f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 28.7 24.3 22.9 NF Noi se Fi gure, ZS = 50 Ohms f = 1950 MHz dB 2.9 VD D evi ce Voltage V 4.8 Rth,j-l Thermal Resi stance (juncti on - lead) o C /W 97 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth, j-l P arameter S upply C urrent Value U nit 160 mA Operati ng Temperature -40 to +85 C Maxi mum Input P ower +10 dB m -40 to +150 C +150 C S torage Temperature Range Operati ng Juncti on Temperature Key parameters, at typical operating frequencies: Parameter 500 MH z Gai n Noi se Fi gure Output IP3 Output P1dB Input Return Loss Isolati on 850 MH z Gai n Noi se Fi gure Output IP3 Output P1dB Input Return Loss Isolati on 1950 MH z Gai n Noi se Fi gure Output IP3 Output P1dB Input Return Loss Isolati on 2400 MH z Gai n Noi se Fi gure Output IP3 Output P1dB Input Return Loss Isolati on 522 Almanor Ave., Sunnyvale, CA 94085 Ty pical Test C ondition 25oC U nit 27.4 2.5 32.1 21.6 13.8 29.9 dB dB ZS = 50 Ohms dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm dB m dB dB 25.6 2.5 32.5 21.5 15.7 28.7 dB dB ZS = 50 Ohms dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm dB m dB dB 20.5 2.9 31.6 19.0 14.0 24.3 dB dB ZS = 50 Ohms dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm dB m dB dB 18.8 3.3 30.3 17.8 12.5 22.9 dB dB ZS = 50 Ohms dBm Tone spaci ng = 1 MHz, Pout per tone = 0 dBm dB m dB dB Phone: (800) SMI-MMIC 2 (ID = 80 mA, unless otherwise noted) http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier Pin # Function 1 RF IN 2 3 4 D escription D ev ice Schematic RF i nput pi n. Thi s pi n requi res the use of an external D C blocki ng capaci tor chosen for the frequency of operati on. GND C onnecti on to ground. Use vi a holes for best performance to reduce lead i nductance. Place vi as as close to ground leads as possi ble. RF OUT/Vcc RF output and bi as pi n. Bi as should be suppli ed to thi s pi n through an external seri es resi stor and RF choke i nductor. Because D C bi asi ng i s present on thi s pi n, a D C blocki ng capaci tor should be used i n most appli cati ons (see appli cati on schemati c). The supply si de of the bi as network should be well bypassed. GND Same as Pi n 2. Application Schematic for Operation at 850 MHz R ecommended B ias R esistor Values Supply Voltage(Vs) 6V 7.5V 9V 1uF 12V 68pF Rbias VS R bias 15 33 51 91 (Ohms) For 7.5V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended. 33nH 50 ohm microstrip 50 ohm microstrip 2 1 3 100pF 4 100pF Application Schematic for Operation at 1950 MHz 1uF 22pF Rbias VS 22nH 50 ohm microstrip 50 ohm microstrip 2 1 68pF 522 Almanor Ave., Sunnyvale, CA 94085 3 4 Phone: (800) SMI-MMIC 3 68pF http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier S12, ID =80mA, T=25C S21, ID =80mA, T=25C 30 -15 25 -20 dB 20 dB -25 15 -30 10 -35 0 1 2 3 4 0 5 1 Frequency GHz 3 4 5 4 5 Frequency GHz S11, ID =80mA, T=25C dB 2 S22, ID =80mA, T=25C 0 0 -5 -5 dB -10 -15 -10 -15 -20 -20 0 1 2 3 4 5 0 Frequency GHz 1 2 3 Frequency GHz S22, ID=80mA, Ta=25C S11, ID=80mA, Ta=25C Freq. Min = 0.1 GHz Freq. Max = 5.0 GHz Freq. Min = 0.1 GHz Freq. Max = 5.0 GHz 5 GHz 5 GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier S21, ID =80mA, T=-40C 30 -20 25 dB S12, ID =80mA, T=-40C -15 dB 20 -25 -30 15 -35 10 0 1 2 3 4 Frequency GHz 0 5 1 S11, ID =80mA, T=-40C 2 3 Frequency GHz 4 5 4 5 S22, ID =80mA, T=-40C 0 0 -5 dB dB -5 -10 -10 -15 -15 -20 0 1 2 3 4 5 0 1 2 3 Frequency GHz Frequency GHz S11, ID=80mA, Ta=-40C S22, ID=80mA, Ta=-40C Freq. Min = 0.1 GHz Freq. Max = 5.0 GHz Freq. Min = 0.1 GHz Freq. Max = 5.0 GHz 5 GHz 5 GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier S21, ID =80mA, T=85C dB S12, ID =80mA, T=85C 30 -15 25 -20 dB 20 15 -25 -30 10 -35 0 1 2 3 4 5 0 Frequency GHz 2 3 4 5 4 5 Frequency GHz S22, ID =80mA, T=85C S11, ID =80mA, T=85C 0 0 -5 -5 dB 1 dB -10 -10 -15 -15 -20 -20 -25 0 1 2 3 4 5 0 1 2 3 Frequency GHz Frequency GHz S11, ID=80mA, Ta=85C S22, ID=80mA, Ta=85C Freq. Min = 0.1 GHz Freq. Max = 5.0 GHz Freq. Min = 0.1 GHz Freq. Max = 5.0 GHz 5 GHz 5 GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier Caution: ESD Sensitive Part Number Ordering Information Appropriate precautions in handling, packaging and testing devices must be observed. Package Dimensions Outline Drawing Part N umber R eel Siz e D ev ices/R eel SGA-6589 13" 3000 Part Symbolization The part will be symbolized with an A65 designator on the top surface of the package. 1 A65 2 4 3 PCB Pad Layout 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EDS-101268 Rev B Preliminary Preliminary SGA-6589 DC-4000 MHz 4.8V SiGe Amplifier Component Tape and Reel Packaging Tape Dimensions For 89 Outline C avi ty Length Wi dth D epth P i tch B ottom Hole D i ameter A B K P1 D1 S iz e (mm)leel 4.91 +/- 0.01 4.52 +/- 0.01 1.90 +/- 0.01 8.00 +/- 0.01 1.60 +/- 0.10 P erforati on D i ameter P i tch P osi ti on D0 P0 E 1.55 +/- 0.05 4.00 +/- 0.01 1.75 +/- 0.01 C over Tape Wi dth Tape Thi ckness C t 9.10 +/- 0.25 0.05 +/- 0.01 C arri er Tape Wi dth Thi ckness W T 12.0 +/- 0.03 0.30 +/- 0.05 D i stance C avi ty to P erforati on (Wi dth D i recti on) C avi ty to P erforati on (Length D i recti on) F 5.50 +/- 0.10 P2 2.00 +/- 0.10 D escription 522 Almanor Ave., Sunnyvale, CA 94085 S y mbol Phone: (800) SMI-MMIC 8 http://www.stanfordmicro.com EDS-101268 Rev B