SUPERTEX DN2624ND

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DN2624
N-Channel Depletion-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
BVDSX /
BVDGX
RDS(ON)
(max)
IDSS
(min)
TO-92
Die
240V
4.0Ω
600mA
DN2624N3
DN2624ND
Advanced DMOS Technology
Features
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
Normally-on switches
Solid state relays
Package Options
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSX
Drain-to-Gate Voltage
BVDGX
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
SGD
TO-92
± 20V
-55°C to +150°C
300°C
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
8-9
8
DN2624
Thermal Characteristics
Package
ID (continuous)*
TO-92
ID (pulsed)
300mA
Power Dissipation
@ TC = 25°C
θjc
θja
°C/W
°C/W
1.0W
125
170
1.0A
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Electrical Characteristics
IDR*
IDRM
300mA
1.0A
* ID (continuous) is limited by max rated Tj.
(@ 25°C unless otherwise specified)
Symbol
Parameter
BVDSX
Drain-to-Source
Breakdown Voltage
VGS(OFF)
Gate-to-Source OFF Voltage
∆VGS(OFF)
Min
Typ
Max
Unit
240
Conditions
V
VGS = -5V, ID = 100µA
–3
V
VDS = 25V, ID= 10µA
Change in VGS(OFF) with Temperature
4.5
mV
VDS = 25V, ID= 10µA
IGSS
Gate Body Leakage Current
100
nA
VGS = ± 20V, VDS = 0V
ID(OFF)
Drain-to-Source Leakage Current
10
µA
VGS = -10V, VDS = Max Rating
1
mA
VGS = -10V, VDS = 0.8 Max Rating
TA = 125°C
mA
VGS = 0V, VDS = 25V
–1
IDSS
Saturated Drain-to-Source Current
RDS(ON)
Static Drain-to-Source
ON-State Resistance
4.0
Ω
VGS = 0V, ID = 200mA
∆RDS(ON)
Change in RDS(ON) with Temperature
1.1
%/°C
VGS = 0V, ID = 200mA
GFS
Forward Transconductance
mhos
ID = 300mA, VDS = 10V
CISS
Input Capacitance
720
COSS
Common Source Output Capacitance
100
CRSS
Reverse Transfer Capacitance
30
td(ON)
Turn-ON Delay Time
15
30
tr
Rise Time
22
44
td(OFF)
Turn-OFF Delay Time
22
44
tf
Fall Time
30
60
VSD
Diode Forward Voltage Drop
trr
Reverse Recovery Time
600
400
VGS = -10V, VDS = 25V
pF
f = 1 MHz
VDD = 25V,
ns
ID = 200mA,
RGEN = 10Ω
1.8
600
V
VGS = -10V, ISD = 200mA
ns
VGS = -10V, ISD = 1A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
0V
90%
PULSE
GENERATOR
INPUT
-10V
10%
t(ON)
td(ON)
Rgen
t(OFF)
tr
td(OFF)
OUTPUT
tF
D.U.T.
VDD
10%
INPUT
10%
OUTPUT
0V
90%
90%
8-10
DN2624
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Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
10
VGS = 0V
8
VGS = -3.5V
RDS(on) (ohms)
BVDSS (normalized)
1.1
1.0
6
4
2
0
0.9
-50
150
100
50
0
0
0.2
0.4
0.6
0.8
1.0
TJ (°C)
ID (amps)
Transfer Characteristics
V(th) and RDS Variation with Temperature
8
2.0
1.0
0.8
RDS (ON) @
VGS = 0V, ID = 200mA
VGS(th) (normalized)
ID (amperes)
TA = 25°C
TA = 125°C
0.6
0.4
1.6
1.4
1.2
1.2
0.8
VGS(OFF) @
VDS = 25V, ID = 10µA
1.0
0.2
0.4
0.8
0
0
0
-1
-2
-3
1
2
-50
0
50
100
150
Tj (°C)
VGS (Volts)
Capacitance Vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
800
4
VGS = -10V
CISS
2
VGS (volts)
C (picofarads)
600
400
VDS = 25V
0
ID = 30mA
700pF
-2
200
-4
620pf
COSS
CRSS
0
-6
0
10
20
30
40
0
VDS (Volts)
1
2
3
4
QC (Nanocoulombs)
8-11
5
RDS(ON) (normalized)
1.6
TA = -55°C
VDS = 10V
DN2624
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Typical Performance Curves
Output Characteristics
2.0
Saturation Characteristics
2.0
1.6
1.6
VGS = 1.0V
1.2
ID (amperes)
ID (amperes)
VGS = 1.0V
0.5V
0.8
0V
-0.5V
0.4
1.2
0.5V
0.8
0V
0.4
-0.5V
-1.0V
-1.0V
0
0
0
20
10
40
30
50
0
2
4
VDS (volts)
Transconductance vs. Drain Current
8
10
Power Dissipation vs. Temperature
1.0
2.0
VDS = 10V
TA = -55°C
1.6
0.8
TO-92
TA = 25°C
1.2
PD (watts)
GFS (siemens)
6
VDS (volts)
TA = 125°C
0.8
0.4
0.6
0.4
0.2
0
0
0
0.2
0.4
0.6
0.8
1.0
0
25
50
ID (amperes)
75
100
125
150
TA(°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
1.0
1.0
Thermal Resistance (normalized)
ID (amperes)
TO-92 (pulsed)
0.1
TO-92 (DC)
0.01
TA = 25°C
0.001
1
0.8
0.6
0.4
TO-92
PD = 1.0W
TA = 25°C
0.2
0
10
100
1000
0.001
VDS (volts)
0.01
0.1
tp (seconds)
8-12
1
10