2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* 702❋ 60V 7.5Ω 0.5A 2N7002 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Advanced DMOS Technology Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High input impedance and high gain Complementary N- and P-channel devices Applications Package Options Motor controls Converters Amplifiers Switches Power supply circuits Driver (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Drain Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ± 30V Operating and Storage Temperature Soldering Temperature* Gate Source TO-236AB -55°C to +150°C (SOT-23) 300°C top view * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 7-9 2N7002 Thermal Characteristics Package TO-236AB ID (continuous)* ID (pulsed) Power Dissipation @ TA = 25°C °C/W θjc °C/W θja IDR* IDRM 115mA 800mA 0.36W 200 350 115mA 800mA * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage 60 VGS(th) Gate Threshold Voltage 1.0 ∆V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current Typ Max Unit Conditions V ID = 10µA, VGS = 0V 2.5 V VGS = VDS, ID = 250µA -5.5 mV/°C ID = 250µA, VGS = VDS ±100 nA VGS = ±20V, VDS = 0V 1 µA VGS = 0V, VDS = Max Rating 500 µA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C mA VGS = 10V, VDS = 25V ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source ON-State Resistance 7.5 Ω VGS = 5V, ID = 50mA 7.5 Ω VGS = 10V, ID = 0.5A ∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/°C VGS = 10V, ID = 0.5A GFS Forward Transconductance CISS Input Capacitance 50 COSS Common Source Output Capacitance 25 CRSS Reverse Transfer Capacitance t(ON) Turn-ON Time 20 t(OFF) Turn-OFF Time 20 VSD Diode Forward Voltage Drop trr Reverse Recovery Time 80 m Ω 500 VDS = 25V, ID = 0.5A pF VGS = 0V, VDS = 25V, f = 1MHz ns VDD = 30V, ID = 0.2A, RGEN = 25Ω 1.2 V ISD = 0.2A, VGS = 0V 400 ns ISD = 0.8A, VGS = 0V 5 Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 7-10 2N7002 Typical Performance Curves Output Characteristics Saturation Characteristics 2.0 2.0 VGS = 1.6 10V VGS = 1.6 10V 9V ID(amperes) ID (amperes) 9V 1.2 8V 0.8 7V 1.2 8V 0.8 7V 6V 0.4 5V 3V 0 0 10 20 30 40 4V 3V 0 0 50 2 4 6 8 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Temperature 10 0.5 0.5 VDS = 25V 0.4 0.4 SOT-23 TA = -55°C 0.3 PD (watts) GFS (siemens) 6V 0.4 5V 4V 25°C 0.2 125°C 0.1 0.3 0.2 0.1 0 0 0 0.2 0.4 0.6 0.8 1.0 0 50 25 ID (amperes) 75 100 125 150 TA(°C) Thermal Response Characteristics Maximum Rated Safe Operating Area 1.0 1.0 Thermal Resistance (normalized) SOT-23 (pulsed) ID (amperes) SOT-23 (DC) 0.1 0.01 TA = 25°C 0.001 0.1 1 10 0.8 0.6 0.4 0 0.001 100 VDS (volts) SOT-23 TA = 25°C PD = 0.36W 0.2 0.01 0.1 tp (seconds) 7-11 1.0 10 2N7002 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 10 1.1 VGS = 5V RDS(ON) (ohms) BVDSS (normalized) 8 1.0 VGS = 10V 6 4 2 0.9 0 -50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5 ID (amperes) Tj (°C) Transfer Characteristics VGS(th) and RDS(ON) Variation with Temperature 2.0 2.0 1.4 RDS(ON) @ 10V, 0.5A 1.6 VGS(th) (normalized) ID (amperes) TA = -55°C 1.2 25°C 0.8 125°C 1.6 1.2 1.2 1.0 0.8 VGS(th) @ 1mA 0.8 0.4 0.4 0.6 0 0 0 2 4 6 8 10 -50 0 50 VGS (volts) 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 50 10 f = 1MHz VDS = 10V CISS VGS (volts) C (picofarads) 8 25 90 pF 6 4 COSS 2 VDS = 40V 30 pF CRSS 0 0 0 10 20 30 40 0 0.2 0.4 0.6 QG (nanocoulombs) VDS (volts) 7-12 0.8 1.0 RDS(ON) (normalized) VDS = 25V