2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology ■ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ■ Low power drive requirement ■ Ease of paralleling ■ Low CISS and fast switching speeds ■ Excellent thermal stability ■ Integral Source-Drain diode Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ■ High input impedance and high gain ■ Complementary N- and P-channel devices Applications ■ Motor controls Package Options ■ Converters ■ Amplifiers ■ Switches ■ Power supply circuits ■ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVDSS SGD Drain-to-Gate Voltage BVDGS TO-92 Gate-to-Source Voltage ± 30V Operating and Storage Temperature Soldering Temperature* -55°C to +150°C 300°C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 7-5 2N7000 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25°C °C/W °C/W θja IDR* IDRM 200mA 500mA 1W 125 170 200mA 500mA TO-92 θjc * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage 60 VGS(th) Gate Threshold Voltage 0.8 IGSS IDSS Typ Max Unit Conditions V ID = 10µA, VGS = 0V 3.0 V VGS = VDS, ID = 1mA Gate Body Leakage 10 nA VGS = ±15V, VDS = 0V Zero Gate Voltage Drain Current 1 µA VGS = 0V, VDS = 48V 1 mA VGS = 0V, VDS = 48V TA = 125°C mA VGS = 4.5V, VDS = 10V ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source ON-State Resistance 5.3 Ω VGS = 4.5V, ID = 75mA RDS(ON) Static Drain-to-Source ON-State Resistance 5.0 Ω VGS = 10V, ID = 0.5A GFS Forward Transconductance CISS Input Capacitance 60 COSS Common Source Output Capacitance 25 CRSS Reverse Transfer Capacitance 5 t(ON) Turn-ON Time 10 t(OFF) Turn-OFF Time 10 VSD Diode Forward Voltage Drop 100 Ω 75 VDS = 10V, ID = 0.2A pF VGS = 0V, VDS = 25V f = 1 MHz m ns VDD = 15V, ID = 0.5A, RGEN = 25Ω 0.85 V ISD = 0.2A, VGS = 0V Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 7-6 2N7000 Typical Performance Curves Output Characteristics 2.5 Saturation Characteristics 2.5 VGS =10V VGS = 10V 8V 2.0 2.0 1.5 ID (amperes) ID (amperes) 8V 6V 1.0 4V 0.5 6V 1.0 4V 0.5 0 0 0 10 20 30 40 50 0 2 4 6 8 10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 2.0 1.0 VDS = 25V 0.8 0.6 PD (watts) GFS (siemens) 1.5 TA = -55°C 25°C 0.4 TO-92 1.0 125°C 0.2 0 0 0 0.2 0.4 0.6 0.8 0 1.0 25 50 ID (amperes) 125 150 Thermal Resistance (normalized) 1.0 TO-92 (pulsed) TO-92 (DC) ID (amperes) 100 Thermal Response Characteristics Maximum Rated Safe Operating Area 1.0 0.1 0.01 0.001 75 TC (°C) TC = 25°C 0.1 0.8 0.6 0.4 TO-92 PD = 1W TC = 25°C 0.2 0 1.0 10 0.001 100 VDS (volts) 0.01 0.1 tp (seconds) 7-7 1 10 2N7000 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 5.0 1.1 VGS = 4.5V RDS(ON) (ohms) BVDSS (normalized) 4.0 1.0 VGS = 10V 3.0 2.0 1.0 0.9 0 -50 0 50 100 150 0 1.0 0.5 1.5 2.5 2.0 ID (amperes) Tj (°C) Transfer Characteristics V(th) and RDS Variation with Temperature 1.9 1.6 2.5 VDS = 25V 1.5 125°C 1.0 0.5 RDS @ 10V, 1.0A 1.3 1.2 V(th) @ 1mA 1.0 1.0 0.8 0.7 0.4 0.6 0 0 2 4 6 8 10 -50 0 50 VGS (volts) 100 Tj(°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 100 10 f = 1MHz VDS = 10V 8 75 40V VGS (volts) C (picofarads) 150 50 CISS 25 COSS 6 80 pF 4 2 CRSS 40 pF 0 0 0 10 20 30 40 0 0.2 0.4 0.6 QG (nanocoulombs) VDS (volts) 7-8 0.8 1.0 RDS(ON) (normalized) VGS(th) (normalized) 25°C ID (amperes) 1.6 1.4 TA = -55°C 2.0