DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS(ON) (max) IDSS (min) TO-243AA* Die** 350V 10Ω 200mA DN3535N8 DN3535NW Product marking for TO-243AA: DN5S* Where *= 2-week alpha date code * Same as SOT-89. Products shipped on 2000 piece carrier tape reels. ** Die in wafer form. Features Advanced DMOS Technology ❏ High input impedance These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Normally-on switches ❏ Solid state relays Package Option ❏ Converters ❏ Linear amplifiers ❏ Constant current sources ❏ Power supply circuits ❏ Telecom D G Absolute Maximum Ratings D S Drain-to-Source Voltage BVDSX Drain-to-Gate Voltage BVDGX Gate-to-Source Voltage ± 20V Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. TO-243AA (SOT-89) 55°C to +150°C 300°C 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, DN3535 Thermal Characteristics Package TO-243AA ID (continuous)* ID (pulsed) Power Dissipation @ TA = 25°C θjc °C/W θja °C/W IDR* IDRM 230mA 500mA 1.6W † 15 78† 230mA 500mA * ID (continuous) is limited by max rated Tj. † Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min BVDSX Drain-to-Souce Breakdown Voltage 350 VGS(OFF) Gate-to-Source OFF Voltage -1.5 ∆VGS(OFF) Typ Max Unit Conditions V VGS = -5.0V, ID = 1.0µA -3.5 V VDS = 15V, ID = 10µA Change in VGS(OFF) with Temperature 4.5 mV/°C VDS = 15V, ID = 10µA IGSS Gate Body Leakage Current 100 nA VGS = ±20V, VDS = 0V ID(OFF) Drain-to-Source Leakage Current 1.0 µA VGS = -5.0V, VDS = Max Rating 1.0 mA VGS = -5.0V, VDS = 0.8 Max Rating TA = 125°C mA VGS = 0V, VDS = 15V IDSS Saturated Drain-to-Source Current 200 RDS(ON) Static Drain-to-Source ON-State Resistance 10 Ω VGS = 0V, ID = 150mA ∆RDS(ON) Change in RDS(ON) with Temperature 1.1 %/°C VGS = 0V, ID = 150mA GFS Forward Transconductance mg Ω ID = 100mA, VDS=10V CISS COSS CRSS Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance 360 40 10 pF VGS = -5.0V, VDS = 25V, f =1.0Mhz td(ON) tr td(OFF) tf Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time 15 20 20 30 ns VDD = 25V, ID = 150mA, RGEN = 25Ω, VGS = 0V to -10V VSD Diode Forward Voltage Drop 1.8 V VGS = -5.0V, ISD = 150mA trr Reverse Recovery Time ns VGS = -5.0V, ISD = 150mA 200 800 Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 0V 90% PULSE GENERATOR INPUT -10V 10% t(ON) td(ON) VDD 10% td(OFF) tF D.U.T. INPUT 10% OUTPUT 0V 90% OUTPUT Rgen t(OFF) tr RL 90% 2 DN3535 Typical Performance Curves Output Characteristics Saturation Characteristics 1.0 1.0 VGS = +2.0V 0V 0V -0.5V 0.8 ID (Amperes) ID (Amperes) VGS = +2V -0.5V 0.8 -0.8V 0.6 -1.0V 0.4 -0.8V 0.6 -1V 0.4 -1.5V -1.5V 0.2 0.2 -2V -2V 0.0 0.0 0 50 100 150 200 250 300 0 350 2 4 6 8 10 VDS (Volts) VDS (Volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 2.0 1.0 VDS = 10V 1.5 PD (Watts) GFS (siemens) TO-243AA TA = -55°C 0.8 0.6 TA = 25°C 1.0 0.4 TA = 125°C 0.5 0.2 0.0 0.0 0.0 0.2 0.4 0.6 0 0.8 50 75 100 125 ID (Amperes) TC (°C) Maximum Rated Safe Operating Area Thermal Response Characteristics 10 150 Thermal Resistance (normalized) 1.0 TO-243AA (pulsed) 1.0 ID (amperes) 25 TO-243AA (DC) 0.1 0.01 T A =25°C TO-243AA P D = 1.6W T C = 25°C 0.8 0.6 0.4 0.2 0 0.001 1 10 100 0.001 1000 VDS (Volts) 0.01 0.1 tp (seconds) 3 1.0 10 DN3535 Typical Performance Curves On Resistance vs. Drain Current BVDSV Variation with Temperature 25 1.2 ID = 1mA 20 RDS(ON) (ohms) BVDSV (Normalized) VGS = -5V 1.1 1.0 VGS = 0V 15 10 0.9 5 0 50 100 0 0.0 150 0.2 0.4 0.8 1.0 ID (Amperes) TJ (°C) VGS(OFF) and RDS(ON) w/ Temperature Transfer Characteristics 1300 VDS = 10V VGS(OFF) (normalized) TA = -55°C 1100 ID (Milliamperes) 0.6 900 TA = 25°C 700 TA = 125°C 500 300 1.4 2.4 1.2 2.0 VGS(OFF) @ 10µA 1.0 1.6 0.8 1.2 RDS(on) @ 0V, 150mA 0.6 RDS(ON) (normalized) 0.8 -50 0.8 100 0.4 -50 0 -3 -2 -1 0 1 2 0 25 50 75 0.4 100 125 150 VGS (Volts) TJ (°C) Capacitance vs. Drain Source Voltage Gate Drive Dynamic Characteristics 350 3 VGS = -5V ID = 150mA 2 300 1 250 VGS (volts) C (picofarads) -25 200 150 CISS 100 VDS=40V 0 -1 -2 -3 50 0 0 -4 COSS CRSS -5 10 20 30 0 40 500 1000 1500 2000 QG (picocoulombs) VDS (volts) 12/13/010 ©2001 Supertex Inc. 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