SUPERTEX TN0106

TN0106
TN0110
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
†
Order Number / Package
BVDSS /
BVDGS
RDS(ON)
(max)
ID(ON)
(min)
VGS(th)
(max)
TO-92
Die†
60V
3.0Ω
2A
2.0V
TN0106N3
—
100V
3.0Ω
2A
2.0V
TN0110N3
TN0110ND
MIL visual screening available
Features
Low Threshold DMOS Technology
■ Low threshold — 2.0V max.
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
■ High input impedance
■ Low input capacitance — 50pF typical
■ Fast switching speeds
■ Low on resistance
■ Free from secondary breakdown
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
■ Low input and output leakage
■ Complementary N- and P-channel devices
Applications
Package Options
■ Logic level interfaces – ideal for TTL and CMOS
■ Solid state relays
■ Battery operated systems
■ Photo voltaic drives
■ Analog switches
■ General purpose line drivers
■ Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSS
SGD
Drain-to-Gate Voltage
BVDGS
TO-92
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
Soldering Temperature*
-55°C to +150°C
300°C
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
7-35
7
TN0106/TN0110
Thermal Characteristics
Package
ID (continuous)*
TO-92
θjc
ID (pulsed)
Power Dissipation
@ TC = 25°C
°C/W
2.0A
1.0W
125
0.5A
θja
IDR*
IDRM
170
0.5A
2.0A
°C/W
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Parameter
Min
Drain-to-Source
Breakdown Voltage
BVDSS
TN0110
100
TN0106
60
VGS(th)
Gate Threshold Voltage
∆V GS(th)
Change in VGS(th) with Temperature
IGSS
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
Typ
0.6
-3.2
Max
ID = 1mA, VGS = 0V
2.0
V
VGS = VDS, ID = 0.5mA
-5.0
mV/°C
VGS = VDS, ID = 1.0mA
100
nA
VGS = ±20V, VDS = 0V
10
ON-State Drain Current
0.75
1.4
2.0
3.4
2.0
4.5
1.6
3.0
∆RDS(ON)
Change in RDS(ON) with Temperature
0.6
1.1
GFS
Forward Transconductance
CISS
Input Capacitance
50
60
COSS
Common Source Output Capacitance
25
35
CRSS
Reverse Transfer Capacitance
4.0
8.0
td(ON)
Turn-ON Delay Time
2.0
5.0
tr
Rise Time
3.0
5.0
td(OFF)
Turn-OFF Delay Time
6.0
7.0
tf
Fall Time
3.0
6.0
VSD
Diode Forward Voltage Drop
1.0
1.5
trr
Reverse Recovery Time
400
225
VGS = 0V, VDS = Max Rating
µA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
A
VGS = 5V, VDS = 25V
VGS = 10V, VDS = 25V
Static Drain-to-Source
ON-State Resistance
RDS(ON)
Conditions
V
500
ID(ON)
Unit
Ω
%/°C
400
m
Ω
Symbol
VGS = 4.5V, ID = 250mA
VGS = 10V, ID = 500mA
ID = 0.5A, VGS = 10V
VDS = 25V, ID = 500mA
pF
VGS = 0V, VDS = 25V
f = 1 MHz
ns
VDD = 25V
ID = 1.0A
RGEN = 25Ω
V
ISD = 0.5A, VGS = 0V
ns
ISD = 0.5A, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
10V
90%
PULSE
GENERATOR
INPUT
0V
10%
t(ON)
td(ON)
Rgen
t(OFF)
tr
td(OFF)
OUTPUT
tF
D.U.T.
VDD
10%
INPUT
10%
OUTPUT
0V
90%
90%
7-36
TN0106/TN0110
Typical Performance Curves
Output Characteristics
Saturation Characteristics
5
5
4
4
VGS = 10V
3
ID (amperes)
ID (amperes)
VGS = 10V
8V
2
6V
1
4V
2V
0
0
10
20
30
40
3
8V
2
6V
1
4V
0
2V
50
0
2
4
VDS (volts)
6
8
10
VDS (volts)
Power Dissipation vs. Case Temperature
Transconductance vs. Drain Current
0.5
10
TA = -55°C
0.4
8
0.3
PD (watts)
GFS (siemens)
TA = 25°C
TA = 150°C
0.2
0.1
6
4
2
VDS = 25V
TO-92
0
0
0
.6
1.2
1.8
2.4
0
3.0
25
50
125
100
150
Thermal Response Characteristics
Maximum Rated Safe Operating Area
10
Thermal Resistance (normalized)
1.0
TC = 25°C
TO-92 (pulsed)
ID (amperes)
75
TC (° C)
ID (amperes)
1.0
TO-92 (DC)
0.1
0.8
0.6
0.4
TO-92
TC = 25°C
PD = 1W
0.2
0
0.01
1
10
100
0.001
1000
VDS (volts)
0.01
0.1
tp (seconds)
7-37
1
10
7
TN0106/TN0110
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
1.3
5.0
VGS = 5V
4.0
RDS(ON) (ohms)
1.1
1.0
3.0
2.0
1.0
0.9
0
0.8
-50
0
50
100
150
1.0
0
5.0
ID (amperes)
Transfer Characteristics
V(th) and RDS Variation with Temperature
1.4
3.0
VDS = 25V
TA = -55°C
1.4
V(th)@ 0.5mA
1.2
VGS(th) (normalized)
2.4
ID (amperes)
4.0
3.0
2.0
Tj (° C)
25°C
1.8
150°C
1.2
0.6
0
1.0
1.2
1.0
RDS(ON) @ 10V, 0.5A
0.8
0.8
0.6
0.6
0.4
0
2
4
6
8
10
0.4
-50
0
50
100
150
Tj (° C)
VGS (volts)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
10
100
f = 1MHz
VDS = 10V
8
55pF
VGS (volts)
C (picofarads)
75
CISS
50
40V
6
4
COSS
25
2
CRSS
50pF
0
0
0
10
20
30
40
0
1.0
2.0
3.0
QG (nanocoulombs)
VDS (volts)
7-38
4.0
5.0
RDS(ON) (normalized)
BVDSS (normalized)
1.2
VGS = 10V