SUPERTEX TN2106

TN2106
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
Product marking for SOT-23:
BVDSS /
BVDGS
RDS(ON)
(max)
VGS(th)
(max)
TO-236AB*
TO-92
Die
N1L❋
60V
2.5Ω
2.0V
TN2106K1
TN2106N3
TN2106ND
where ❋ = 2-week alpha date code
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Features
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Package Options
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
Drain
General purpose line drivers
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BVDGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
Soldering Temperature*
Gate
Source
TO-236AB
-55°C to +150°C
(SOT-23)
300°C
top view
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
7-71
S G D
TO-92
TN2106
Thermal Characteristics
ID (continuous)*
ID (pulsed)
Power Dissipation
@ TA = 25°C
°C/W
°C/W
θja
IDR*
IDRM
TO-236AB
0.28A
0.8A
0.36W
200
350
0.28A
0.8A
TO-92
0.30A
1.0A
0.74W
125
170
0.30A
1.0A
Package
θjc
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
60
VGS(th)
Gate Threshold Voltage
0.6
∆V GS(th)
Change in VGS(th) with Temperature
IGSS
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
ID(ON)
ON-State Drain Current
RDS(ON)
Static Drain-to-Source
ON-State Resistance
Typ
Max
Unit
ID = 1mA, VGS = 0V
2.0
V
VGS = VDS, ID = 1mA
-3.8
-5.5
mV/°C
ID = 1mA, VGS = VDS
0.1
100
nA
VGS = ±20V, VDS = 0V
1
µA
VGS = 0V, VDS = Max Rating
100
µA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
A
VGS = 10V, VDS = 25V
5.0
Ω
VGS = 4.5V, ID = 200mA
2.5
Ω
VGS = 10V, ID = 500mA
1.0
%/°C
VGS = 10V, ID = 500mA
0.6
∆RDS(ON)
Change in RDS(ON) with Temperature
GFS
Forward Transconductance
CISS
Input Capacitance
35
50
COSS
Common Source Output Capacitance
17
25
CRSS
Reverse Transfer Capacitance
7
8
td(ON)
Turn-ON Delay Time
3
5
tr
Rise Time
5
8
td(OFF)
Turn-OFF Delay Time
6
9
tf
Fall Time
5
8
VSD
Diode Forward Voltage Drop
1.2
1.8
trr
Reverse Recovery Time
400
0.70
150
Conditions
V
400
m
Ω
Symbol
VDS = 25V, ID = 500mA
pF
VGS = 0V, VDS = 25V, f = 1MHz
ns
VDD = 25V
ID = 0.5A
RGEN = 25Ω
V
ISD = 0.5A, VGS = 0V
ns
ISD = 0.5A, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
10V
90%
PULSE
GENERATOR
INPUT
0V
10%
t(ON)
td(ON)
Rgen
t(OFF)
tr
td(OFF)
OUTPUT
tF
D.U.T.
VDD
10%
INPUT
10%
OUTPUT
0V
90%
90%
7-72
TN2106
Typical Performance Curves
Output Characteristics
Saturation Characteristics
2.5
2.5
VGS =
VGS =
10V
10V
2.0
1.5
ID (amperes)
ID (amperes)
2.0
8V
1.0
6V
0.5
1.5
8V
1.0
6V
0.5
4V
4V
3V
3V
0
0
0
10
20
30
40
0
50
2
4
6
8
10
VDS (volts)
VDS (volts)
Power Dissipation vs. Temperature
Transconductance vs. Drain Current
1.0
0.5
VDS = 25V
0.4
0.8
TA = -55°C
0.3
PD (watts)
GFS (siemens)
TO-92
25°C
0.2
125°C
0.1
0.6
0.4
SOT-23
0.2
0
0
0
0.2
0.4
0.6
0.8
1.0
0
25
75
50
125
100
150
TA (° C)
ID (amperes)
Thermal Response Characteristics
Maximum Rated Safe Operating Area
1.0
1.0
Thermal Resistance (normalized)
SOT-23 (pulsed)
ID (amperes)
SOT-23 (DC)
0.1
0.01
TA = 25°C
0.001
0.1
1
10
TO-236AB
0.8
0.6
TO-92
VDS (volts)
TC = 25°C
PD = 1W
0.4
0.2
0
0.001
100
TA = 25°C
PD = 0.36W
0.01
0.1
tp (seconds)
7-73
1.0
10
TN2106
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
10
1.1
V GS = 4.5V
RDS(ON) (ohms)
BVDSS (normalized)
8
1.0
VGS = 10V
6
4
2
0.9
0
-50
0
50
100
150
0
0.5
1.0
1.5
2.0
2.5
ID (amperes)
Tj (°C)
Transfer Characteristics
VGS(th) and RDS(ON) Variation with Temperature
1.0
2.0
1.2
RDS(ON) @ 10V, 0.5A
0.8
VGS(th) (normalized)
ID (amperes)
TA = -55°C
0.6
25°C
0.4
125°C
1.6
1.0
1.2
0.8
0.8
0.6
VGS(th) @ 1mA
0.2
0.4
0.4
0
0
0
2
4
6
8
-50
10
0
50
VGS (volts)
100
150
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
10
100
f = 1MHz
8
VDS = 10V
VGS (volts)
C (picofarads)
75
50
CISS
6
4
VDS = 20V
92 pF
25
COSS
2
CRSS
38 pF
0
0
0
10
20
30
0
40
0.2
0.4
0.6
QG (nanocoulombs)
VDS (volts)
7-74
0.8
1.0
RDS(ON) (normalized)
VDS = 25V