EMF5XV6T5 Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com Features • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb−Free Devices (3) (2) Q1 Q2 MAXIMUM RATINGS Rating R2 Symbol Value (4) Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current ESD VCEO Collector-Base Voltage Emitter-Base Voltage HBM Class 1 MM Class B Electrostatic Discharge Vdc VCBO −15 Vdc VEBO −6.0 Vdc IC −1.0 (Note 1) −0.5 Adc ESD SOT−563 CASE 463A PLASTIC MARKING DIAGRAM HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic (One Junction Heated) 1 Symbol Characteristic (Both Junctions Heated) Unit 357 (Note 2) 2.9 (Note 2) mW mW/°C RqJA 350 (Note 2) °C/W UY = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Symbol Max Unit ORDERING INFORMATION 500 (Note 2) 4.0 (Note 2) mW mW/°C PD Total Device Dissipation TA = 25°C Derate above 25°C RqJA 250 (Note 2) °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Single pulse 1.0 ms. 2. FR−4 @ Minimum Pad. © Semiconductor Components Industries, LLC, 2005 Package Shipping † EMF5XV6T5 SOT−563 (Pb−Free) 8000/Tape & Reel EMF5XV6T5G SOT−563 (Pb−Free) 8000/Tape & Reel Device PD Thermal Resistance, Junction-to-Ambient November, 2005 − Rev. 2 UY M G G Max Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient (6) 1 −12 Collector Current − Peak Collector Current − Continuous (5) 6 Q2 (TA = 25°C) Collector-Emitter Voltage R1 Unit Q1 (TA = 25°C unless otherwise noted, common for Q1 and Q2) Electrostatic Discharge (1) 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: EMF5XV6T5/D EMF5XV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Characteristic Symbol Min Typ Max Unit Q1 OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.1 mAdc (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc (VCE = 10 V, IC = 5.0 mA) hFE 80 140 − (IC = 10 mA, IB = 0.3 mA) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 3) ON CHARACTERISTICS (Note 3) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 32.9 47 61.1 kW Resistor Ratio R1/R2 0.8 1.0 1.2 Q2 OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO −12 − − Vdc Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO −15 − − Vdc Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO −6.0 − − Vdc Collector Cutoff Current (VCB = −15 Vdc, IE = 0) ICBO − − −0.1 mAdc (VEB = −6.0 Vdc) IEBO − − −0.1 mAdc DC Current Gain (Note 4) (IC = −10 mA, VCE = −2.0 V) hFE 270 − 680 Collector −Emitter Saturation Voltage (Note 4) (IC = −200 mA, IB = −10 mA) VCE(sat) − − −250 mV Base −Emitter Saturation Voltage (Note 4) (IC = −150 mA, IB = −20 mA) VBE(sat) − −0.81 −0.90 V (IC = −150 mA, VCE = −3.0 V) VBE(on) − −0.81 −0.875 V Emitter Cutoff Current ON CHARACTERISTICS Base −Emitter Turn−on Voltage (Note 4) Input Capacitance (VEB = 0 V, f = 1.0 MHz) Cibo − 52 − pF Output Capacitance (VCB = 0 V, f = 1.0 MHz) Cobo − 30 − pF Turn−On Time (IBI = −50 mA, IC = −500 mA, RL = 3.0 W) ton − 50 − ns Turn−Off Time (IB1 = IB2 = −50 mA, IC = −500 mA, RL = 3.0 W) toff − 80 − ns 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 −50 RqJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 2 150 EMF5XV6T5 10 1000 IC/IB = 10 1 25°C TA=−25°C 0.01 0 25°C −25°C 10 50 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 100 75°C 0.1 VCE = 10 V hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS FOR Q1 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=−25°C 10 1 0.1 0.01 0.2 0 25°C 75°C 0.6 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 VO = 5 V 0 Figure 4. Output Capacitance 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 Figure 5. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) Figure 3. DC Current Gain f = 1 MHz IE = 0 V TA = 25°C 0.8 100 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 3 10 EMF5XV6T5 TYPICAL ELECTRICAL CHARACTERISTICS FOR Q2 0.1 1 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 1 IC/IB = 200 100 50 0.01 10 TA = 25°C 0.001 0.001 0.01 −55°C 0.1 TA = 125°C Figure 7. Collector Emitter Saturation Voltage vs. Collector Current Figure 8. Collector Emitter Saturation Voltage vs. Collector Current 1 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 500 125°C 400 300 25°C 200 TA = −55°C 100 0.001 0.01 0.1 IC/IB = 50 25°C 0.1 −55°C TA = 125°C 0.01 0.001 1 IC, COLLECTOR CURRENT (AMPS) 1 1.2 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) TA = 25°C 0.9 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.1 Figure 10. Collector Emitter Saturation Voltage vs. Collector Current 1 0.8 IC = 1.0 A 0.7 0.6 0.5 0.4 500 mA 50 mA 250 mA 0.2 0.1 0.01 IC, COLLECTOR CURRENT (AMPS) Figure 9. DC Current Gain 0.3 1 IC, COLLECTOR CURRENT (AMPS) VCE = 1.0 V 0 0.1 0.01 IC, COLLECTOR CURRENT (AMPS) 600 hFE, DC CURRENT GAIN 25°C 0.01 0.001 1 0.1 IC/IB = 100 10 mA 5.0 mA 0 0.00001 0.0001 1 −55°C 0.8 25°C TA = 125°C 0.6 0.4 0.2 100 mA 0.001 0.01 0.1 1 0 0.001 IB, BASE CURRENT (AMPS) 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 11. Collector Emitter Saturation Voltage vs Base Current Figure 12. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 4 1 EMF5XV6T5 55 VCE = 3.0 V Cibo, INPUT CAPACITANCE 1 −55°C 0.8 25°C 0.6 TA = 125°C 0.4 0.2 0 0.001 0.01 0.1 1 f = 1 MHz IC = 0 A TA = 25°C 50 45 40 35 30 25 20 0 1 2 3 4 IC, COLLECTOR CURRENT (AMPS) VEB, EMITTER BASE VOLTAGE Figure 13. Base Emitter Turn−On Voltage vs. Collector Current Figure 14. Input Capacitance 35 Cobo, OUTPUT CAPACITANCE VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 1.2 f = 1 MHz IE = 0 A TA = 25°C 30 25 20 15 10 0 2 4 6 8 10 VCB, COLLECTOR BASE VOLTAGE Figure 15. Output Capacitance http://onsemi.com 5 12 14 5 6 EMF5XV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 5 1 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 4 3 E −Y− HE b 65 PL 0.08 (0.003) DIM A b C D E e L HE C M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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