SFF40N30M SFF40N30Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 40 AMP / 300 Volts 0.10 Ω N-Channel Power MOSFET Part Number / Ordering Information 1/ SFF40N30 __ __ __ ¦ ¦ + Screening 2/ __ = Not Screen ¦ ¦ TX = TX Level ¦ ¦ TXV = TXV Level ¦ ¦ S = S Level ¦ ¦ ¦ + Lead Option 3/ __ = Straight Leads ¦ DB = Down Bend ¦ UB = Up Bend ¦ + Package 3/ M = TO-254 Z = TO-254Z Features: • • • • • • • • • • • Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Ceramic Seals for Improved Hermeticity Hermetically Sealed Package TX, TXV, Space Level Screening Available Replacement for IXTH40N30 Types Maximum Ratings Symbol Value Units Drain – Source Voltage VDS 300 Volts Gate – Source Voltage VGS ±20 Volts ID 40 Amps PD 150 114 W Top & Tstg -55 to +150 ºC RθJC 0.83 ºC/W Continuous Collector Current Power Dissipation TC = 25ºC TC = 55ºC Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-254 (M) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. TO-254Z (Z) DATA SHEET #: F00141E DOC SFF40N30M SFF40N30Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics @ T J = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units BVDSS 300 –– –– Volts RDS(on) –– –– 0.10 Ω ID(on) 40 –– –– A VGS(th) 2.0 –– 4.0 V gfs 15 25 –– mho IDSS –– –– –– –– 250 1000 µA At rated VGS IGSS –– –– –– –– +100 -100 nA VGS=10 Volts 50% rated VDS 50% Rated ID Qg Qgs Qgd –– –– –– 177 28 78 200 50 105 nC 30 60 175 45 50 90 250 90 nsec tf –– –– –– –– VSD –– –– 1.5 V trr QRR –– –– –– –– 325 –– nsec nC Ciss Coss Crss –– –– –– 4800 745 283 –– –– –– pF Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µA) Drain to Source On State Resistance (VGS=10 V, ID=50% Rated ID) On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=10V) Gate Threshold Voltage (VDS=VGS, ID= 4mA) Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 50% Rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time VDD=50% Rated VDS 50% Rated ID RG= 2.0Ω VGS=10 Volts Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Input Capacitance Reverse Transfer Capacitance TJ=25ºC IF=10A Di/dt=100A/µsec VGS=0 Volts VDS=25 Volts f=1 MHz td(on) tr td(off) For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Numbers: SFF40N30M; SFF40N30MDB; SFF40N30MUB; SFF40N30Z; SFF40N30ZDB; SFF40N0ZUB; PIN ASSIGNMENT (Standard) Package TO-254 (M) TO-254Z (Z) Drain Pin 1 Pin 1 Source Pin 2 Pin 2 Gate Pin 3 Pin 3 SFF40N30M SFF40N30Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Case Outline: TO-254 (M) .800 .790 Ø.149 .139 .500 MIN .545 .535 .155 .145 PIN 3 .545 .535 .305 .295 PIN 2 PIN 1 3x Ø.045 .035 .675±.010 .260 .240 .155 .140 .050 .040 SUFFIX: M SUFFIX: MD SUFFIX: MU SUFFIX: MDB 2x .190 .150 SUFFIX: MDB Case Outline: TO-254Z (Z) .545 .535 2x Ø.150 .140 .555 .500 2x .140 .125 2x .275 .255 2x .155 .145 PIN 3 1.090 .820 .545 1.050 .790 .535 .305 .295 PIN 2 PIN 1 3x .045 .035 SUFFIX: Z .285 .265 2x .275 .255 .260 .240 .155 .135 .055 .035 2x .190 .150 .170 MIN .170 MIN SUFFIX: ZD SUFFIX: ZDB SUFFIX: ZU SUFFIX: ZUB 2x .190 .150