SFL3200/39 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET Features: • • • • • • • • • Rugged Construction Low RDS(on) and high transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Package TX, TXV and Space Level Screening Available Maximum Ratings Logic Level 12A 150V .17Ω N-Channel Power MOSFET TO-39 Symbol Value Unit Drain to Source Voltage VDS 150 Volts Gate to Source Voltage VGS +16 Volts ID 9.3 Amps IP 35 Amps Top & Tstg -55 to 175 ºC Thermal Resistance Junction to Case RθJC 11.5 ºC/W Total Device Dissipation @ TC = 25 °C Total Device Dissipation @ TA = 25 °C PD 13 1.2 Watts Continuous Drain Current Peak Drain Current TC = 25 °C 1/ Operating and Storage Temperature Package Outline: TO-39 (JEDEC) PIN OUT: PIN 1: Source PIN 2: Gate Pin 3: Drain Note: 1/ Peak Drain Current Limited by Package Lead Wire NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0007A SFL3200/39 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µΑ) BVDSS 150 –– –– Volts Drain to Source On State Resistance (VGS=10 V, ID=5 A) RDS(on) –– .16 .17 Ω ID(on) 12 –– –– A VGS(th) 1 –– 2 V Forward Transconductance (VDS>ID(on) x Max, IDS=5A) gfs 8.35 6 –– mho Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) IDSS –– –– –– –– 25 250 µA On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=5V) Gate Threshold Voltage (VDS=VGS, ID=250µΑ) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time At rated VGS IGSS –– –– –– –– 100 -100 nA VGS=10 Volts 80% rated VDS ID=9A Qg Qgs Qgd –– –– –– –– –– –– 35 4.1 21 nC 2.4 45 38 36 –– –– –– –– nsec tf –– –– –– –– VSD –– –– 1.33 V T rr QRR –– –– 160 8.1 240 –– nsec nC Ciss Coss Crss –– –– –– 775 140 70 –– –– –– pF VDD=50% Rated VDS RG=15Ω ID=7.2A Diode Forward Voltage (VGS=0 V, TJ=25ºC) IS=7.2A Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Input Capacitance Reverse Transfer Capacitance TJ=150ºC IF=7.2A Di/dt=100A/µsec VGS=0 Volts VDS=25 Volts F=1 MHz td(on) tr td(off)