SFL3200/39 Logic Level 12A 150V .17Ω N

SFL3200/39
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Features:
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Rugged Construction
Low RDS(on) and high transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dv/dt performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed Package
TX, TXV and Space Level Screening Available
Maximum Ratings
Logic Level
12A 150V .17Ω
N-Channel Power MOSFET
TO-39
Symbol
Value
Unit
Drain to Source Voltage
VDS
150
Volts
Gate to Source Voltage
VGS
+16
Volts
ID
9.3
Amps
IP
35
Amps
Top & Tstg
-55 to 175
ºC
Thermal Resistance Junction to Case
RθJC
11.5
ºC/W
Total Device Dissipation @ TC = 25 °C
Total Device Dissipation @ TA = 25 °C
PD
13
1.2
Watts
Continuous Drain Current
Peak Drain Current TC = 25 °C
1/
Operating and Storage Temperature
Package Outline: TO-39 (JEDEC)
PIN OUT:
PIN 1: Source
PIN 2: Gate
Pin 3: Drain
Note:
1/
Peak Drain Current Limited by Package Lead Wire
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0007A
SFL3200/39
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Symbol
Min
Typ
Max
Units
Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µΑ)
BVDSS
150
––
––
Volts
Drain to Source On State Resistance (VGS=10 V, ID=5 A)
RDS(on)
––
.16
.17
Ω
ID(on)
12
––
––
A
VGS(th)
1
––
2
V
Forward Transconductance (VDS>ID(on) x Max, IDS=5A)
gfs
8.35
6
––
mho
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
IDSS
––
––
––
––
25
250
µA
On State Drain Current
(VDS>ID(on) X RDS(on) Max, VGS=5V)
Gate Threshold Voltage (VDS=VGS, ID=250µΑ)
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
At rated VGS
IGSS
––
––
––
––
100
-100
nA
VGS=10 Volts
80% rated VDS
ID=9A
Qg
Qgs
Qgd
––
––
––
––
––
––
35
4.1
21
nC
2.4
45
38
36
––
––
––
––
nsec
tf
––
––
––
––
VSD
––
––
1.33
V
T rr
QRR
––
––
160
8.1
240
––
nsec
nC
Ciss
Coss
Crss
––
––
––
775
140
70
––
––
––
pF
VDD=50%
Rated VDS
RG=15Ω
ID=7.2A
Diode Forward Voltage (VGS=0 V, TJ=25ºC) IS=7.2A
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
TJ=150ºC
IF=7.2A
Di/dt=100A/µsec
VGS=0 Volts
VDS=25 Volts
F=1 MHz
td(on)
tr
td(off)