solid state devices, inc. sff120-28q

PRELIMINARY
SFF120-28Q
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
9.2 AMPS
100 VOLTS
0.35S
QUAD N-CHANNEL
POWER MOSFET
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with poly silicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed surface mount package
• TX, TXV and Space Level screening available
• Replaces 4x IRF120 Types in One Package
28 PIN CLCC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
VALUE
UNIT
Drain to Source Voltage
VDS
100
Volts
Gate to Source Voltage
VGS
±20
Volts
ID
9.2
Amps
Top & Tstg
-55 to +150
R 2JC
10
PD
12.5
9.5
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case (All Four)
@ TC = 25oC
@ TC = 70oC
Total Device Dissipation
o
o
C
C/W
Watts
PACKAGE OUTLINE: 28 PIN CLCC
PIN OUT:
MOSFET 1
DRAIN:
GATE:
SOURCE:
MOSFET 2
DRAIN:
GATE:
SOURCE:
MOSFET 3
DRAIN:
GATE:
SOURCE:
MOSFET 4
DRAIN:
GATE:
SOURCE:
(3 PLACES)
5, 6, 7
1
2, 3, 4
9, 10, 11
8
12, 13, 14
19, 20, 21
15
16, 17, 18
23, 24, 25
22
26, 27, 28
NOTE: All drain/source pins must be connected on the PC board in order to
maximize current carrying capability and to minimize RDS (on)
NOTE: All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00225B
PRELIMINARY
SFF120-28Q
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified)
SYMBOL
MIN
TYP
MAX
UNIT
BVDSS
100
-
-
V
RDS(on)
-
-
0.35
S
ID(on)
9.2
-
-
A
VGS(th)
2.0
-
4.0
V
gfs
2.7
4.1
-
S( É )
Zero Gate Voltage Drain Current
(VDS = max rated Voltage, VGS = 0V)
(VDS = 80% rated VDS, VGS = 0V, TA = 125oC)
IDSS
-
-
25
250
:A
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
At rated VGS
IGSS
-
-
+100
-100
nA
VGS = 10 V
80% rated VDS
60% rated ID
VDD =50%
rated VDS
50% rated ID
RG = 18 S
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
-
10.7
2.9
5.1
13
30
19
20
16
4.4
7.7
20
45
29
30
VSD
-
-
2.5
V
RATING
Drain to Source Breakdown Voltage
(VGS =0 V, ID =250:A)
Drain to Source ON State Resistance
(VGS = 10 V, 60% of Rated ID)
ON State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
Gate Threshold Voltage
(VDS =VGS, ID =250:A)
Forward Transconductance
(VDS > ID(on) x RDS (on) Max, IDS =60% rated ID)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off DELAY Time
Fall Time
Diode Forvard Voltage
(IS = rated ID, VGS = 0V, TJ = 25oC)
o
nC
nsec
Diode Reverse Recovery Time
Reverse Recovery Charge
TJ =25 C
IF = rated ID
di/dt = 100A/:sec
trr
QRR
55
0.25
140
0.65
260
1.3
nsec
:C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS =0 Volts
VDS =25 Volts
f =1 MHz
Ciss
Coss
Crss
-
350
130
36
-
pF
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES: