SFF60P05M SFF60P05Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4470 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com -60 AMP/-50 Volts 25 m typical P-Channel POWER MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF60P05 __ __ __ │ └ │ Screening 2/ │ │ __ = Not Screened TX = TX Level │ │ TXV = TXV Level │ │ S = S Level │ │ Lead Option └ │ __ = Straight Leads │ DB = Down Bend │ UB = Up Bend │ Package 3/ └ M = TO-254 Z = TO-254Z Features: Rugged Construction with Poly Silicon Gate Low RDS(on) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed TX, TXV, and Space Level Screening Available. Consult Factory. Maximum Ratings4/ Symbol Value Units Drain - Source Voltage VDS -50 V Gate – Source Voltage VGS +20 V ID -60 A TOP & TSTG -55 to +150 ºC RJC 0.8 ºC/W PD 156 118 Watts Continuous Drain Current Operating & Storage Temperature Thermal Resistance, Junction to Case Total Device Power Dissipation TC = 25ºC TC = -55ºC NOTES: TO-254 (M) TO-254Z (Z) *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Maximum current limited by package configuration. o 4/ Unless otherwise specified, all electrical characteristics @25 C. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0045E DOC SFF60P05M SFF60P05Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4470 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 4/ Electrical Characteristics Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS = 0V, ID = 250A) BVDSS -50 -70 –– Volts Drain to Source On State Resistance (VGS = -10V, ID = 60A) RDS(on)1 –– 0.021 0.033 Drain to Source On State Resistance (VGS = -10V, ID = 30A) RDS(on)2 –– 0.021 –– Gate Threshold Voltage (VDS = VGS, ID = -250A) VGS(th) -2.0 -2.8 -4.0 Volts gfs –– 50 –– S TA = 25oC TA = 125oC IDSS –– –– 0.005 –– 1 50 A At Rated VGS IGSS –– –– -10 10 -100 100 A VGS = -10V VDD = 40V ID = 60A Qg Qgs Qgd –– –– –– 200 20 80 300 50 125 nC t(on) td(on) tr –– –– –– –– 40 20 125 –– –– t(off) td(off) tf –– –– –– –– 90 60 225 –– –– IS = Rated ID VGS = 0V TJ = 25ºC VSD –– -1.3 -1.9 Volts Diode Reverse Recovery Time IF = 10A di/dt = 100A/usec trr Qrr –– –– 140 –– 200 –– ns C Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = -25V f = 1 MHz Ciss Coss Crss –– –– –– 6000 1800 500 –– –– –– pF Forward Transconductance (VDS > ID(on) x RDS(on) Max, IDs = 50% of Rated ID) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0V) (VDS = 40 V, VGS = 0V) Gate to Source Leakage (For Gate to Source Leakage Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. VDD = 25 V ID = 30 A RL = 6.2 DATA SHEET #: FP0045E ns DOC SFF60P05M SFF60P05Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4470 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com PACKAGE OUTLINE: TO-254 (M) PACKAGE OUTLINE: TO-254Z (Z) PIN 3 PIN 2 PIN 3 PIN 1 PIN 2 PIN 1 Available with glass or ceramic seals – contact factory for details. Available Part Numbers: SFF60P05M, SFF60P05MUB, SFF60P05MDB; SFF60P05Z, SFF60P05ZUB, SFF60P05ZDB NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) DATA SHEET #: FP0045E DOC