SFF70N10M SFF70N10Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 70 AMP 600 VOLT 0.030Ω N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Rugged construction with poly silicon gate • Ultra low RDS (on) and high transconductance • Excellent high temperature stability • Very fast switching speed • Fast recovery and superior dv/dt performance • Increased reverse energy capability • Low input and transfer capacitance for easy paralleling • Hermetically sealed package • TX, TXV and Space Level screening available • Replaces: SMM70N10 Types TO-254 (M) TO-254Z (Z) MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Voltage VDS 100 Volts Gate to Source Voltage V GS + 20 Volts ID 56 1/ Amps Top & Tstg -55 to +150 R 0JC .83 o PD 150 114 Watts Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case o Total Device Dissipation @ TC = 25 C @ TC = 55oC CASE OUTLINE: TO-254 (Sufix M) Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate CASE OUTLINE: TO-254Z (Sufix Z) Pin Out: Pin 1: Drain Pin 2: Source Pin 3: Gate Available with Glass or Ceramic Seals. Contact Facory for details. NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00247B o C C/W SFF70N10M SFF70N10Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) SYMBOL MIN TYP MAX UNIT BVDSS 100 - - V RDS(on) - 0.025 0.03 Ω ID(on) 70 - - A VGS(th) 2 - 4.0 V gfs 20 40 - Smho IDSS - - 250 250 µA At rated VGS IGSS - - +100 -100 nA VGS = 10 V 80% rated VDS Rated ID Qg Qgs Qgd td (on) tr td (off) tf - 110 30 50 25 15 80 15 140 40 80 40 180 100 40 VSD - 1.0 1.8 V trr QRR - 1.25 0.3 200 - nsec µC Ciss Coss Crss - 4100 1200 310 - pF RATING Drain to Source Breakdown Voltage (VGS =0 V, ID = 250µA) Drain to Source on State Resistance (VGS = 10 V,Tc = 150oC) On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) Gate Threshold Voltage (VDS = VGS, ID = 250µA) Forward Transconductance (VDS > ID(on) X RDS (on) Max, IDS=60% rated ID) Zero Gate Voltage Drain Current (VDS = 80% rated voltage, VGS = 0V) (VDS = 80% rated VDS, VGS = 0V, TA = 125oC) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off DelayTime Fall Time Diode Forvard Voltage VDD =50% rated VDS ID=70A RG=8Ω VGS=10V (IS = rated ID, VGS = 0V, TJ = 25oC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance o TJ =25 C IF = ID di/dt = 100A/µsec VGS =0 Volts VDS =25 Volts f =1 MHz For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. NOTES: 1/ Maximum current limited by package, die rated at 70A. nC nsec