SFP630
SemiWell Semiconductor
N-Channel MOSFET
Features
RDS(on) (Max 0.4 Ω )@VGS=10V
■
Gate Charge (Typical 19nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
■
■
■
2. Drain
{
Symbol
■
●
◀
1. Gate{
▲
●
●
{
General Description
This Power MOSFET is produced using Semiwell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
3. Source
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
200
V
Continuous Drain Current(@TC = 25°C)
9
A
Continuous Drain Current(@TC = 100°C)
5.7
A
36
A
±25
V
mJ
Drain to Source Voltage
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
160
EAR
Repetitive Avalanche Energy
(Note 1)
7.2
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
72
W
PD
TSTG, TJ
TL
(Note 1)
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
0.57
W/°C
- 55 ~ 150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
-
-
1.74
°C/W
RθCS
Thermal Resistance, Case to Sink
-
0.5
-
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
°C/W
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
200
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.20
--
V/°C
1
µA
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
--
--
VDS = 160 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 25 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -25 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.35
0.4
Ω
--
4.4
--
S
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.5 A
gFS
Forward Transconductance
VDS = 40 V, ID = 4.5 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
420
550
pF
--
85
110
pF
--
35
45
pF
--
25
60
ns
--
60
130
ns
--
65
150
ns
--
45
100
ns
--
19
25
nC
--
3
--
nC
--
9.5
--
nC
9
A
A
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100 V, ID = 9 A,
RG = 25 Ω
(Note 4, 5)
VDS = 160 V, ID = 9 A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 9 A
Drain-Source Diode Forward Voltage
--
--
36
VSD
--
--
1.5
V
trr
Reverse Recovery Time
--
155
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9 A,
dIF / dt = 100 A/µs
--
0.69
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3mH, IAS = 9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9A, di/dt ≤ 300µA/s, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
(Note 4)
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
0
10
150℃
25℃
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
-1
-1
10
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
-55℃
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS = 10V
VGS = 20V
0.6
0.3
※ Note : TJ = 25℃
0.0
1
10
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25℃
-1
0
4
8
12
16
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
800
Ciss
600
Coss
400
Crss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
200
0
-1
10
10
20
ID, Drain Current [A]
1200
Capacitances [pF]
IDR, Reverse Drain Current [A]
0.9
12
V G S , Gate-Source Voltage [V]
R DS(O N) [Ω ],
Drain-Source On-Resistance
1.2
VDS = 40V
10
VDS = 100V
VDS = 160V
8
6
4
2
※ Note : ID = 9A
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
0
5
10
15
20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Typical Characteristics
(Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 4.5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
1
10
10 ms
DC
0
10
※ Notes :
6
4
2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
25
-1
10
0
1
10
2
10
50
10
Figure 9. Maximum Safe Operating Area
10
0
125
D = 0 .5
※ N o te s :
1 . Z θ J C( t) = 1 .7 4 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .1
0 .0 5
-1
PDM
0 .0 2
0 .0 1
t1
s in g le p u ls e
10
100
Figure 10. Maximum Drain Current
vs. Case Temperature
0 .2
10
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Zθ JC(t), Thermal Response
ID, Drain Current [A]
8
ID, Drain Current [A]
2
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ]
Figure 11. Transient Thermal Response Curve
10
1
150
Gate Charge Test Circuit & Waveform
V
G
S
S
am
eT
ype
asD
U
T
50K
Ω
200nF
12V
Q
g
10V
300nF
V
D
S
V
G
S
Q
gs
Q
gd
D
U
T
3m
A
C
harge
Resistive Switching Test Circuit & Waveforms
V
D
S
R
G
R
L
V
D
S
9
0
%
V
D
D
V
G
S
1
0
%
V
G
S
D
U
T
1
0
V
t
d
(
o
n
)
t
r
t
d
(
o
ff)
to
n
t
f
to
ff
Unclamped Inductive Switching Test Circuit & Waveforms
B
V
D
S
S
1
2------------------=---- L
IA
E
A
S
S
2
-V
B
V
D
S
S
D
D
L
V
D
S
B
V
D
S
S
IA
S
ID
R
G
1
0
V
tp
V
D
D
D
U
T
ID(t)
V
(t)
D
S
V
D
D
tp
T
im
e
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v /d t c o n tr o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id t h
D = -------------------------G a t e P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v /d t
V
SD
B o d y D io d e
F o r w a r d V o lta g e D r o p
V
DD
TO-220 Package Dimension
Dim.
mm
Typ.
Min.
9.7
6.3
9.0
12.8
1.2
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Max.
10.1
6.7
9.47
13.3
1.4
Inch
Typ.
Min.
0.382
0.248
0.354
0.504
0.047
1.7
2.5
0.067
0.098
3.0
1.25
2.4
5.0
2.2
1.25
0.45
0.6
3.4
1.4
2.7
5.15
2.6
1.55
0.6
1.0
Ø
0.118
0.049
0.094
0.197
0.087
0.049
0.018
0.024
0.134
0.055
0.106
0.203
0.102
0.061
0.024
0.039
3.6
E
B
0.142
H
A
φ
I
F
C
M
L
G
1
D
2
1. Gate
2. Drain
3. Source
3
J
N
K
Max.
0.398
0.264
0.373
0.524
0.055
O