TSP50N06M / TSF50N06M
60V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
•
•
•
•
•
50A, 60V, RDS(on) = 0.023Ω @VGS = 10 V
Low gate charge ( typical 33nC)
Fast switching
100% avalanche tested
Improved dv/dt capability
{
D
●
◀
{G
G DS
TO-220
▲
●
●
TO-220F
GD S
{S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°Cunless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
TSP50N06M
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
TSF50N06M
Units
V
50
50*
A
30
30*
A
200
200*
A
60
(Note 1)
VGSS
Gate-Source Voltage
± 20
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
535
mJ
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
12
4.5
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
120
0.8
47
0.31
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
TSP50N06M
1.24
TSF50N06M
3.22
Units
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
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TSP50N06M / TSF50N06M
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60
--
--
V
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.06
--
V/°C
VDS = 60 V, VGS = 0 V
--
--
1
µA
IDSS
Zero Gate Voltage Drain Current
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
0.023
Ω
VDS = 48 V, TC = 125°C
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 25 A
--
0.019
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1100
--
pF
--
450
--
pF
--
60
--
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 25A,
RG = 25 Ω
(Note 4, 5)
VDS = 48 V, ID = 50 A,
VGS = 10 V
(Note 4, 5)
--
20
--
ns
--
100
--
ns
--
50
--
ns
--
55
--
ns
--
33
-
nC
--
8
--
nC
--
12
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
50
A
ISM
--
--
200
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 50 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
50
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 50 A,
dIF / dt = 100 A/µs
--
70
--
µC
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 250 uH, IAS = 50.0 A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 50.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
2
10
ID, Drain Current [A]
2
10
1
10
1
10
175℃
25℃
※ Note :
1. 250µs Pulse Test
2. TC = 25℃
0
10
※ Notes :
1. VDS = 30V
2. 250µ s Pulse Test
-55℃
0
10
-1
0
10
1
10
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
10
0.04
IDR, Reverse Drain Current [A]
R DS(O N) [ Ω ],
Drain-Source On-Resistance
0.05
VGS = 10V
0.03
VGS = 20V
1
10
0.02
0.01
※ Note : TJ = 25℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
25℃
175℃
0.00
0
50
100
150
200
0
10
ID, Drain Current [A]
0.2
1.0
1.2
1.4
1.6
12
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
2000
Ciss
1500
Crss
500
VGS, Gate-Source Voltage [V]
Capacitance [pF]
2500
1000
0.8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
0.6
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3500
0.4
VDS = 30V
10
VDS = 48V
8
6
4
2
※ Note : ID = 50A
0
-1
10
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
0
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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Typical Characteristics
(Continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
0.5
※ Notes :
1. VGS = 10 V
2. ID = 25.0 A
0.0
-100
200
-50
50
100
150
200
o
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
60
3
10
Operation in This Area
is Limited by R DS(on)
50
ID, Drain Current [A]
ID, Drain Current [A]
0
TJ, Junction Temperature [ C]
o
100µ s
2
10
1 ms
10 ms
DC
1
10
40
30
20
※ Notes :
10
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0
10
-1
10
0
1
10
0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
for TSP50N06
Zθ JC(t), Thermal Response
10
75
100
125
150
175
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
0 .2
※ N o te s :
1 . Z θ J C( t) = 1 .2 4 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .1
10
-1
0 .0 5
PDM
0 .0 2
t1
0 .0 1
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ]
Figure 11. Transient Thermal Response Curve
for TSP50N06
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Gate Charge Test Circuit & Waveform
VGS
SameType
asDUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
D
S
R
G
R
L
V
D
S
9
0
%
V
D
D
V
G
S
1
0
%
V
G
S
D
U
T
1
0
V
td
(o
n
)
tr
td
(o
ff)
to
n
tf
to
ff
Unclamped Inductive Switching Test Circuit & Waveforms
B
V
D
S
S
1
E
IAS2 -------------------A
S=---- L
2
B
V
D
S
S-V
D
D
L
V
D
S
B
V
D
S
S
IAS
ID
R
G
V
D
D
D
U
T
1
0
V
tp
ID(t)
V
D
S(t)
V
D
D
tp
T
im
e
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Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D U T
V
D S
_
I
S D
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as D U T
V
D D
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a te P u ls e W id th
D = -------------------------G a t e P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I
S D
d i/d t
( D U T )
IR
M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( D U T )
B o d y D io d e R e c o v e r y d v / d t
V
S D
V
D D
B o d y D io d e
F o r w a r d V o lt a g e D r o p
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