Wisdom Semiconductor
WFF6N60
N-Channel MOSFET
Features
RDS(on) (Max 2.0 Ω )@VGS=10V
■
Gate Charge (Typical 16nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
■
■
■
2. Drain
{
Symbol
■
●
1. Gate
◀
{
▲
●
●
{
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
3. Source
TO-220F
1
2
3
Absolute Maximum Ratings (* Drain current limited by junction temperature)
Symbol
VDSS
ID
Value
Units
Drain to Source Voltage
Parameter
600
V
Continuous Drain Current(@TC = 25°C)
5.5*
A
Continuous Drain Current(@TC = 100°C)
2.2*
A
20*
A
±30
V
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
300
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
15
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
40
W
dv/dt
PD
TSTG, TJ
TL
(Note 1)
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
0.30
W/°C
- 55 ~ 150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
-
-
3.79
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.
WFF6N60
Electrical Characteristics
Symbol
( TC = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
600
-
-
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
Δ BVDSS/
Δ TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
-
0.6
-
V/°C
IDSS
Drain-Source Leakage Current
VDS = 600V, VGS = 0V
-
-
10
uA
IGSS
VDS = 480V, TC = 125 °C
-
-
100
uA
Gate-Source Leakage, Forward
VGS = 30V, VDS = 0V
-
-
100
nA
Gate-source Leakage, Reverse
VGS = -30V, VDS = 0V
-
-
-100
nA
2.0
-
4.0
V
-
1.8
2.0
Ω
-
620
810
-
65
85
-
7
10
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
RDS(ON)
Static Drain-Source On-state Resistance
VGS =10 V, ID = 3.0A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS =0 V, VDS =25V, f = 1MHz
pF
Dynamic Characteristics
td(on)
tr
td(off)
Turn-on Delay Time
VDD =300V, ID =5.5A, RG =25Ω
Rise Time
Turn-off Delay Time
(Note 4, 5)
-
15
40
-
45
100
-
45
100
Fall Time
-
40
90
Qg
Total Gate Charge
-
16
20
Qgs
Gate-Source Charge
-
3.5
-
Qgd
Gate-Drain Charge(Miller Charge)
-
6.5
-
Min.
Typ.
Max.
-
-
5.5
-
-
22
tf
VDS =480V, VGS =10V, ID =4.0A
(Note 4, 5)
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =4.0A, VGS =0V
IS=4.0A, VGS=0V, dIF/dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 27.5mH, IAS =5.5A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 5.5A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Unit.
A
-
-
1.4
V
-
310
-
ns
-
2.2
-
uC
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
0
10
1
10
ID, Drain Current [A]
1
10
-1
10
o
150 C
o
-55 C
0
o
10
25 C
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
-2
-1
10
-1
0
10
10
1
10
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
1
5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
6
VGS = 10V
4
3
VGS = 20V
2
1
10
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
※ Note : TJ = 25℃
0
-1
0
2
4
6
8
10
12
14
10
0.2
0.4
0.6
0.8
ID, Drain Current [A]
Capacitances [pF]
Ciss
600
Coss
400
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
200
1.4
1.6
1.8
2.0
12
VDS = 120V
10
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1000
1.0
VSD, Source-Drain voltage [V]
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 5.5A
0
-1
10
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
0
0
4
8
12
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
16
Typical Characteristics (Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 2.5 A
0.5
0.0
-100
200
-50
o
150
200
Figure 8. On-Resistance Variation
vs Temperature
5
10 µs
1 ms
ID, Drain Current [A]
ID, Drain Current [A]
100
100 µs
1
10
10 ms
DC
0
10
-1
10
4
3
2
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
1
-2
10
50
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
0
o
TJ, Junction Temperature [ C]
0
1
10
2
10
0
25
3
10
10
50
VDS, Drain-Source Voltage [V]
75
100
125
TC, Case Temperature [℃]
Figure 9-2. Maximum Safe Operating Area
for WGF6N60
Figure 10. Maximum Drain Current
vs Case Temperature
Zθ JC(t), Thermal Response
D = 0 .5
10
0
0 .2
0 .1
※ N o te s :
1 . Z θ J C (t) = 3 .2 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T JM - T C = P D M * Z θ J C (t)
0 .0 5
10
-1
0 .0 2
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for WGF6N60
10
1
150
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
ID (t)
VDS (t)
VDD
tp
Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
Package Dimensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
0.35 ±0.10
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
9.75 ±0.30
MAX1.47
2.76 ±0.20