Si7407DN New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.012 @ VGS = -4.5 V -15.6 0.016 @ VGS = -2.5 V - 13.5 0.024 @ VGS = -1.8 V - 11 D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D Ultra-Low rDS(on) APPLICATIONS D Load Switch D PA Switch D Battery Switch PowerPAKt 1212-8 S S 3.30 mm 3.30 mm 1 S 2 S 3 G G 4 D 8 D 7 D 6 D D 5 P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS -12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V - 15.6 -9.9 - 11.2 -7.2 ID TA = 85_C Pulsed Drain Current IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 85_C Operating Junction and Storage Temperature Range PD A -30 -3.2 -1.3 3.8 1.5 2.0 0.8 TJ, Tstg W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case Steady State Steady State RthJA RthJC Typical Maximum 26 33 65 81 1.9 2.4 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71912 S-22122—Rev. B, 25-Nov-02 www.vishay.com 1 Si7407DN New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = -400 mA -0.40 Typ Max Unit -1.0 V "100 nA Static Gate Threshold Voltage VDS = 0 V, VGS = "8 V Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward Voltagea -1 VDS = -9.6 V, VGS = 0 V, TJ = 85_C -5 VDS v -5 V, VGS = -4.5 V m mA -30 A VGS = -4.5 V, ID = -15.6 A 0.009 0.012 VGS = -2.5 V, ID = -13.5 A 0.013 0.016 VGS = -1.8 V, ID = -5 A 0.019 0.024 gfs VDS = -6 V, ID = -15.6 A 52 VSD IS = -3.2 A, VGS = 0 V -0.7 -1.2 39 59 rDS(on) Forward Transconductancea VDS = -9.6 V, VGS = 0 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 11 Turn-On Delay Time td(on) 30 tr 50 75 200 300 165 250 60 90 Rise Time Turn-Off Delay Time VDS = -6 V, VGS = -4.5 V, ID = -15.6 A VDD = -6 V, RL = 6 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 6 IF = -3.2 A, di/dt = 100 A/ms nC 45 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 5 thru 2 V 25 I D - Drain Current (A) I D - Drain Current (A) 25 20 1.5 V 15 10 5 20 15 10 TC = 125_C 5 25_C 1V -55 _C 0 0 1 2 3 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 4 0 0.0 0.4 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) Document Number: 71912 S-22122—Rev. B, 25-Nov-02 Si7407DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 5000 4000 0.03 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.04 VGS = 1.8 V 0.02 VGS = 2.5 V Ciss 3000 2000 Coss 0.01 1000 VGS = 4.5 V 0.00 Crss 0 0 5 10 15 20 25 30 0 2 6 8 10 12 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 5 1.3 VDS = 6 V ID = 15.6 A 4 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 4 3 2 1 0 0 9 18 27 36 VGS = 4.5 V ID = 15.6 A 1.2 1.1 1.0 0.9 0.8 -50 45 -25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.04 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 30 TJ = 150_C 10 TJ = 25_C 1 0.0 0.03 ID = 15.6 A 0.02 ID = 5 A 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71912 S-22122—Rev. B, 25-Nov-02 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7407DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.4 50 ID = 250 mA 40 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 30 20 0.0 10 -0.1 -0.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 TJ - Temperature (_C) 10 100 600 Time (sec) Safe Operating Area, Junction-To-Ambient 100 rDS(on) Limited IDM Limited 1 ms I D - Drain Current (A) 10 10 ms 1 ID(on) Limited 100 ms 1s 10 s 0.1 dc TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 www.vishay.com 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71912 S-22122—Rev. B, 25-Nov-02 Si7407DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10- 4 Document Number: 71912 S-22122—Rev. B, 25-Nov-02 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 www.vishay.com 5