VISHAY SI3471DV

Si3471DV
New Product
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 12
D TrenchFETr Power MOSFET: 1.8-V Rated
rDS(on) (W)
ID (A)
0.031 @ VGS = - 4.5 V
- 6.8
0.040 @ VGS = - 2.5 V
- 6.0
0.053 @ VGS = - 1.8 V
- 5.2
APPLICATIONS
D Load Switch
D PA Switch
(4) S
TSOP-6
Top View
1
6
(3) G
3 mm
2
5
3
4
(1, 2, 5, 6) D
2.85 mm
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
- 12
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
V
- 6.8
- 5.1
- 4.9
- 3.7
ID
TA = 85_C
Pulsed Drain Current
IDM
Continuous Diode Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
Unit
TA = 85_C
Operating Junction and Storage Temperature Range
PD
A
- 20
- 1.7
- 0.9
2.0
1.1
1.0
0.6
TJ, Tstg
W
_C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 5 sec
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
55
62.5
90
110
30
36
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72104
S-03183—Rev. A, 17-Feb-03
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Si3471DV
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = - 250 mA
- 0.40
Typ
Max
Unit
-1
V
"100
nA
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Voltagea
VDS = - 9.6 V, VGS = 0 V
-1
VDS = - 9.6 V, VGS = 0 V, TJ = 85_C
-5
VDS = - 5 V, VGS = - 4.5 V
- 20
mA
A
VGS = - 4.5 V, ID = - 6.8 A
0.025
0.031
VGS = - 2.5 V, ID = - 6 A
0.032
0.040
VGS = - 1.8 V, ID = - 3 A
0.041
0.053
gfs
VDS = - 5 V, ID = - 6.8 A
20
VSD
IS = - 1.7 A, VGS = 0 V
- 0.7
- 1.2
18
33
rDS(on)
Forward Transconductancea
Diode Forward
VDS = 0 V, VGS = "8 V
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
4.6
Turn-On Delay Time
td(on)
21
tr
50
75
125
190
110
165
50
80
Rise Time
Turn-Off Delay Time
VDS = - 6 V, VGS = - 4.5 V, ID = - 6.8 A
VDD = - 6 V, RL = 6 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
2.3
IF = - 1.7 A, di/dt = 100 A/ms
nC
33
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
VGS = 5 thru 2 V
16
I D - Drain Current (A)
I D - Drain Current (A)
16
12
1.5 V
8
4
12
8
TC = 125_C
4
25_C
1V
- 55_C
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
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2
5
0
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Document Number: 72104
S-03183—Rev. A, 17-Feb-03
Si3471DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Capacitance
2500
0.08
2000
C - Capacitance (pF)
r DS(on) - On-Resistance ( W )
On-Resistance vs. Drain Current
0.10
0.06
VGS = 1.8 V
VGS = 2.5 V
0.04
Ciss
1500
1000
Coss
0.02
500
VGS = 4.5 V
0.00
Crss
0
0
4
8
12
16
20
0
3
ID - Drain Current (A)
Gate Charge
12
On-Resistance vs. Junction Temperature
1.4
VDS = 6 V
ID = 6.8 A
r DS(on) - On-Resistance (W)
(Normalized)
V GS - Gate-to-Source Voltage (V)
9
VDS - Drain-to-Source Voltage (V)
5
4
3
2
1
VGS = 4.5 V
ID = 6.8 A
1.3
1.2
1.1
1.0
0.9
0
0
5
10
15
0.8
- 50
20
- 25
0
Qg - Total Gate Charge (nC)
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.10
10
0.08
r DS(on) - On-Resistance ( W )
20
TJ = 150_C
TJ = 25_C
1
0.0
25
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
I S - Source Current (A)
6
ID = 6.8 A
0.06
0.04
ID = 3 A
0.02
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Document Number: 72104
S-03183—Rev. A, 17-Feb-03
1.2
1.4
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
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Si3471DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
40
32
ID = 250 mA
0.2
Power (W)
V GS(th) Variance (V)
0.3
0.1
24
TA = 25_C
16
0.0
8
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
10 -2
150
10 -1
TJ - Temperature (_C)
1
10
100
600
Time (sec)
Safe Operating Area
1000
rDS(on) Limited
IDM Limited
I D - Drain Current (A)
100
P(t) = 0.001
P(t) = 0.01
10
1
0.1
0.1
ID(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
TC = 25_C
Single Pulse
dc
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
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4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72104
S-03183—Rev. A, 17-Feb-03
Si3471DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
Document Number: 72104
S-03183—Rev. A, 17-Feb-03
10 -3
10 -2
10 -1
Square Wave Pulse Duration (sec)
1
10
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