Si7413DN Vishay Siliconix New Product P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.015 @ VGS = −4.5 V −13.2 0.020 @ VGS = −2.5 V −11.4 0.029 @ VGS = −1.8 V −9.5 D TrenchFETr Power MOSFET D New PowerPAKr Package − Low Thermal Resistance, RthJC − Low 1.07-mm Profile APPLICATIONS D Load Switch PowerPAK 1212-8 S S 3.30 mm 1 2 3.30 mm S 3 S 4 G G D 8 7 D 6 D 5 D D P-Channel MOSFET Bottom View Ordering Information: Si7413DN-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V −13.2 −8.4 −9.5 −6.1 IDM −30 −3.2 −1.3 3.8 1.5 2.0 0.8 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 26 33 65 81 1.9 2.4 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72616 S-32519—Rev. A, 08-Dec-03 www.vishay.com 1 Si7413DN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −400 mA −0.4 Typ Max Unit −1.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Voltagea VDS = −20 V, VGS = 0 V −1 VDS = −20 V, VGS = 0 V, TJ = 85_C −5 VDS v −5 V, VGS = −4.5 V mA −30 A VGS = −4.5 V, ID = −13.2 A 0.012 0.015 VGS = −2.5 V, ID = −11.4 A 0.016 0.020 VGS = −1.8 V, ID = −3.5 A 0.023 0.029 gfs VDS = −15 V, ID = −13.2 A 47 VSD IS = −3.2 A, VGS = 0 V −0.8 −1.2 34 51 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "8 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance VDS = −10 V, VGS = −4.5 V, ID = −13.2 A f = 1 MHz 5 td(on) Rise Time tr Turn-Off Delay Time VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 8.8 Rg Turn-On Delay Time 5.4 IF = −3.2 A, di/dt = 100 A/ms W 30 45 50 75 200 300 95 140 35 55 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 25 VGS = 5 thru 2 V 20 I D − Drain Current (A) I D − Drain Current (A) 25 15 1.5 V 10 5 20 15 10 TC = 125_C 5 1V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 Transfer Characteristics 30 5 0 0.00 25_C −55_C 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VGS − Gate-to-Source Voltage (V) Document Number: 72616 S-32519—Rev. A, 08-Dec-03 Si7413DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 5000 4000 0.04 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.05 0.03 VGS = 1.8 V VGS = 2.5 V 0.02 0.01 Ciss 3000 2000 1000 VGS = 4.5 V Coss Crss 0.00 0 0 5 10 15 20 25 30 0 4 Gate Charge r DS(on) − On-Resistance (W) (Normalized) V GS − Gate-to-Source Voltage (V) 3 2 1 0 0 5 10 15 20 25 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 13.2 A 4 12 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 5 8 30 35 VGS = 4.5 V ID = 13.2 A 1.4 1.2 1.0 0.8 0.6 −50 40 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.06 30 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 0.05 TJ = 150_C 10 TJ = 25_C 1 0.0 ID = 13.2 A 0.04 ID = 3.5 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72616 S-32519—Rev. A, 08-Dec-03 1.2 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7413DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.4 50 ID = 400 mA 40 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 30 20 0.0 10 −0.1 −0.2 −50 −25 0 25 50 75 100 125 0 150 0.01 0.1 1 TJ − Temperature (_C) 100 600 Safe Operating Area, Junction-To-Ambient 100 IDM Limited rDS(on) Limited 10 I D − Drain Current (A) 10 Time (sec) P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 P(t) = 10 dc TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72616 S-32519—Rev. A, 08-Dec-03 Si7413DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10−4 Document Number: 72616 S-32519—Rev. A, 08-Dec-03 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 www.vishay.com 5