Si7461DP Vishay Siliconix New Product P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0145 @ VGS = −10 V −14.4 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.019 @ VGS = −4.5 V −12.6 APPLICATIONS VDS (V) −60 D Automotive − 12-V Boardnet − High-Side Switches − Motor Drives PowerPAK SO-8 S S 6.15 mm 1 2 5.15 mm S 3 S 4 G G D 8 7 D 6 D 5 D D Bottom View P-Channel MOSFET Ordering Information: Si7461DP-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Avalanche Current IS L= 0.1 0 1 mH Single Pulse Avalanche Energy TA = 25_C Maximum Power Dissipationa TA = 70_C −8.6 −11.5 −6.9 Operating Junction and Storage Temperature Range A −60 −4.5 −1.6 IAS 50 EAS 125 PD V −14.4 IDM mJ 5.4 1.9 3.4 1.2 TJ, Tstg Unit −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 18 23 52 65 1.0 1.3 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72567 S-40411—Rev. C, 15-Mar-04 www.vishay.com 1 Si7461DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −1 Typ Max Unit −3 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea VDS = 0 V, VGS = "20 V Diode Forward Voltagea −1 VDS = −60 V, VGS = 0 V, TJ = 70_C −10 VDS v −5 V, VGS = −10 V rDS(on) DS( ) Forward Transconductancea VDS = −60 V, VGS = 0 V mA −40 A VGS = −10 V, ID = −14.4 A 0.0115 0.0145 VGS = −4.5 V, ID = −12.6 A 0.015 0.019 gfs VDS = −15 V, ID = −14.4 A 31 VSD IS = −4.5 A, VGS = 0 V −0.8 −1.2 121 190 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 32 Gate-Resistance Rg 3 td(on) 20 tr 20 30 205 310 90 135 45 70 Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = −30 V, VGS = −10 V, ID = −14.4 A VDD = −30 V, RL = 30 W ID ^ −1 A, VGEN = −10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 20 IF = −4.5 A, di/dt = 100 A/ms nC W 30 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 50 VGS = 10 thru 4 V 40 I D − Drain Current (A) I D − Drain Current (A) 50 30 20 3V 10 40 30 20 TC = 125_C 10 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 Transfer Characteristics 60 5 0 0.0 25_C −55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72567 S-40411—Rev. C, 15-Mar-04 Si7461DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.020 Capacitance 8000 VGS = 4.5 V C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 7000 0.016 VGS = 10 V 0.012 0.008 Ciss 6000 5000 4000 3000 2000 0.004 Coss 1000 0.000 Crss 0 0 10 20 30 40 50 0 60 10 Gate Charge rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 50 60 VGS = 10 V ID = 14.4 A 1.6 6 4 2 1.4 1.2 1.0 0.8 0 0 25 50 75 100 0.6 −50 125 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.04 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 70 I S − Source Current (A) 40 On-Resistance vs. Junction Temperature 1.8 VDS = 30 V ID = 17 A 8 30 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 10 20 0.03 ID = 14.4 A 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72567 S-40411—Rev. C, 15-Mar-04 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7461DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.8 100 ID = 250 mA 80 0.4 Power (W) V GS(th) Variance (V) 0.6 0.2 60 40 0.0 20 −0.2 −0.4 −50 −25 0 25 50 75 100 125 0 150 0.01 0.1 TJ − Temperature (_C) 1 10 100 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited I D − Drain Current (A) 10 1 P(t) = 0.001 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse P(t) = 10 BVDSS Limited dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 52_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72567 S-40411—Rev. C, 15-Mar-04 Si7461DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72567 S-40411—Rev. C, 15-Mar-04 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 www.vishay.com 5