Si7495DP Vishay Siliconix New Product P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0065 @ VGS = - 4.5 V - 21 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.008 @ VGS = - 2.5 V - 19 APPLICATIONS 0.011 @ VGS = - 1.8 V - 16 D Load Switch VDS (V) - 12 PowerPAK SO-8 S S 6.15 mm 1 2 5.15 mm S 3 G S 4 G D 8 7 D 6 D 5 D D P-Channel MOSFET Bottom View Ordering Information: Si7495DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V - 13 - 21 - 17 IDM - 10 - 50 - 4.5 - 1.6 5 1.8 3.2 1.1 TJ, Tstg Unit - 55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 20 25 54 68 1.7 2.2 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72277 S-31417—Rev. A, 07-Jul-03 www.vishay.com 1 Si7495DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = - 1 mA - 0.4 Typ Max Unit - 0.9 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS = - 9.6 V, VGS = 0 V -1 VDS = - 9.6 V, VGS = 0 V, TJ = 70_C - 10 VDS v - 5 V, VGS = - 4.5 V Voltagea mA - 40 A VGS = - 4.5 V, ID = - 21 A 0.0054 0.0065 VGS = - 2.5 V, ID = - 19 A 0.0065 0.008 VGS = - 1.8 V, ID = - 16 A 0.0088 0.011 gfs VDS = - 15 V, ID = - 21 A 80 VSD IS = - 4.5 A, VGS = 0 V - 0.65 - 1.1 93 140 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "8 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate-Resistance Turn-On Delay Time Rise Time VDS = - 6 V, VGS = - 5 V, ID = - 21 A nC 22 RG 2.7 td(on) 100 150 200 300 350 530 230 350 110 165 tr Turn-Off Delay Time 10.5 VDD = - 6 V, RL = 6 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = - 2.9 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 5 thru 2 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 1.5 V 20 10 30 20 TC = 125_C 10 25_C - 55_C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VGS - Gate-to-Source Voltage (V) Document Number: 72277 S-31417—Rev. A, 07-Jul-03 Si7495DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 11000 0.016 8800 Ciss C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.020 0.012 VGS = 1.8 V 0.008 VGS = 2.5 V 0.004 VGS = 4.5 V 6600 4400 Coss 2200 0.000 Crss 0 0 8 16 24 32 40 0 2 4 ID - Drain Current (A) Gate Charge 10 12 On-Resistance vs. Junction Temperature 1.6 VDS = 6 V ID = 21 A 5 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 8 VDS - Drain-to-Source Voltage (V) 6 4 3 2 VGS = 4.5 V ID = 21 A 1.4 1.2 1.0 0.8 1 0 0 22 44 66 88 0.6 - 50 110 - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.030 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.1 0.0 25 TJ - Junction Temperature (_C) 50 I S - Source Current (A) 6 ID = 21 A 0.024 0.018 0.012 0.006 0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72277 S-31417—Rev. A, 07-Jul-03 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7495DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.4 100 80 ID = 1 mA 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 60 40 0.0 20 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (_C) 1 10 Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 1 ms 10 I D - Drain Current (A) 0.1 Time (sec) 10 ms 100 ms 1 1s 10 s dc 0.1 TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72277 S-31417—Rev. A, 07-Jul-03 Si7495DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 72277 S-31417—Rev. A, 07-Jul-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5