NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 12 VOLTS, 1.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 400 mW COLLECTOR 3 1 BASE Features •High Current Capability (1 A) •High Power Handling (Up to 740 mW) •Low VCE(s) (200 mV Typical @ 500 mA) •Small Size •Low Noise •This is a Pb-Free Device 2 EMITTER 3 WDFN3 CASE 506AU 2 1 Benefits •High Specific Current and Power Capability Reduces Required PCB Area •Reduced Parasitic Losses Increases Battery Life MARKING DIAGRAM VG M G MAXIMUM RATINGS (TA = 25°C) 1 Symbol Max Unit Collector‐Emitter Voltage VCEO -12 Vdc Collector‐Base Voltage VCBO -12 Vdc Emitter‐Base Voltage VEBO -5.0 Vdc Collector Current - Continuous Collector Current - Peak IC ICM -1.0 -2.0 Adc Electrostatic Discharge ESD HBM Class 3B MM Class C Rating Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2008 April, 2008 - Rev. 0 1 VG = Specific Device Code M = Date Code G = Pb-Free Package ORDERING INFORMATION Device Package Shipping† NSS12100UW3TCG WDFN3 (Pb-Free) 3000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS12100UW3/D NSS12100UW3TCG THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD (Note 1) 740 6.0 mW mW/°C RqJA (Note 1) 169 °C/W PD (Note 2) 1.1 9.0 W mW/°C Thermal Resistance, Junction-to-Ambient RqJA (Note 2) 110 °C/W Thermal Resistance, Junction-to-Lead 6 RqJL (Note 2) 33 °C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation, TA = 25°C Derate above 25°C 1. FR-4 @ 100 mm2, 1 oz copper traces. 2. FR-4 @ 500 mm2, 1 oz copper traces. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage, (IC = -10 mAdc, IB = 0) V(BR)CEO -12 - - Vdc Collector-Base Breakdown Voltage, (IC = -0.1 mAdc, IE = 0) V(BR)CBO -12 - - Vdc Emitter-Base Breakdown Voltage, (IE = -0.1 mAdc, IC = 0) V(BR)EBO -5.0 - - Vdc Collector Cutoff Current, (VCB = -12 Vdc, IE = 0) ICBO - -0.02 -0.1 mAdc Emitter Cutoff Current, (VCES = -5.0 Vdc, IE = 0) IEBO - -0.03 -0.1 mAdc 200 100 75 - 400 250 - - -0.030 -0.080 -0.050 -0.200 -0.400 -0.040 -0.100 -0.060 -0.225 -0.440 - -0.95 -1.15 - -1.05 -1.20 ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) Collector-Emitter Saturation Voltage (Note 3) (IC = -0.05 A, IB = -0.005 A) (Note 4) (IC = -0.1 A, IB = -0.002 A) (IC = -0.1 A, IB = -0.010 A) (IC = -0.5 A, IB = -0.050 A) (IC = -1.0 A, IB = -0.100 A) VCE(sat) Base-Emitter Saturation Voltage (Note 3) (IC = -1.0 A, IB = -0.01 A) VBE(sat) Base-Emitter Turn-on Voltage (Note 3) (IC = -2.0 A, VCE = -1.0 V) VBE(on) V V V Input Capacitance (VEB = -0.5 V, f = 1.0 MHz) Cibo - 40 50 pF Output Capacitance (VCB = -3.0 V, f = 1.0 MHz) Cobo - 15 20 pF Delay (VCC = -10 V, IC = 750 mA, IB1 = 15 mA) td - - 20 ns Rise (VCC = -10 V, IC = 750 mA, IB1 = 15 mA) tr - - 90 ns Storage (VCC = -10 V, IC = 750 mA, IB1 = 15 mA) ts - - 140 ns Fall (VCC = -10 V, IC = 750 mA, IB1 = 15 mA) tf - - 100 ns Current-Gain - Bandwidth Product, (IC = -100 mA, VCE = -5 Vdc, f = 100 MHz) fT 200 - - MHz Noise Figure, (IC = -0.2 mA, VCE = -5 Vdc, RS = 2 kW, f = 1 kHz, BW = 200Hz) NF - - 5.0 dB SWITCHING CHARACTERISTICS SMALL-SIGNAL CHARACTERISTICS 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 4. Guaranteed by design but not tested. http://onsemi.com 2 NSS12100UW3TCG 0.9 3.0 IC/IB = 10 VCE(sat) = 150°C VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 1.0 25°C 0.8 0.7 -55°C 0.6 0.5 0.4 0.3 0.2 0.1 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 0.001 2.5 2.0 150°C 1.5 1.0 0.5 10 0.001 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 1.4 IC/IB = 10 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C (5.0 V) 500 150°C (2.0 V) 25°C (5.0 V) 25°C (2.0 V) -55°C (5.0 V) 200 -55°C (2.0 V) 100 1.2 1.0 TA = -55°C 0.8 0.6 25°C 0.4 150°C 0.2 0 0 0.001 0.01 0.1 1 0.001 10 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR-EMITTER VOLTAGE (V) VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) VCE = -1.0 V 1.2 1.0 TA = -55°C 0.8 25°C 0.4 150°C 0.2 0 0.01 0.1 0.1 1 10 Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.4 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current 0.6 10 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 600 300 25°C 0 0 400 VCE(sat) = -55°C IC/IB = 100 10 1 1.0 10 mA 100 mA 300 mA IC = 500 mA 0.8 0.6 0.4 0.2 0 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 10 IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn-On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 100 NSS12100UW3TCG 30 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 50 45 40 Cibo(pF) 35 30 25 20 0 2 1 3 4 VEB, EMITTER BASE VOLTAGE (V) 5 25 Cobo(pF) 20 15 10 5 0 0 Figure 7. Input Capacitance 1 2 3 4 5 6 7 8 VCB, COLLECTOR BASE VOLTAGE (V) Figure 8. Output Capacitance http://onsemi.com 4 9 10 NSS12100UW3TCG PACKAGE DIMENSIONS WDFN3 CASE 506AU-01 ISSUE O D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 2X 0.10 C 2X ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ 0.10 C DIM A A1 A3 b D D2 E E2 e K L E MIN 0.70 0.00 0.25 1.40 0.90 0.35 MILLIMETERS NOM MAX 0.75 0.80 0.05 0.20 REF 0.30 0.35 2.00 BSC 1.50 1.60 2.00 BSC 1.00 1.10 1.30 BSC 0.35 REF 0.40 0.45 MIN 0.028 0.000 INCHES NOM 0.030 0.008 REF 0.012 0.079 BSC 0.055 0.059 0.079 BSC 0.035 0.039 0.051 BSC 0.014 REF 0.014 0.016 0.010 MAX 0.031 0.002 0.014 0.063 0.043 0.018 TOP VIEW SOLDERING FOOTPRINT* A 0.10 C 1.300 2X 8X 0.08 C SEATING PLANE (A3) SIDE VIEW A1 0.400 0.600 C 0.250 D2 e 1.100 e/2 2X 0.300 2 1 L 0.400 K 0.275 1.600 E2 3 3X b *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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