NSS12501UW3T2G 12 V, 7.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 12 VOLTS, 7.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 31 mW COLLECTOR 3 Features 1 BASE •This is a Pb-Free Device MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector‐Emitter Voltage VCEO 12 Vdc Collector‐Base Voltage VCBO 12 Vdc Emitter‐Base Voltage VEBO 6.0 Vdc IC 5.0 Adc Collector Current - Peak ICM 7.0 A Electrostatic Discharge ESD Collector Current - Continuous HBM Class 3B MM Class C 2 EMITTER 3 WDFN3 CASE 506AU 2 1 MARKING DIAGRAM VF MG G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 875 7.0 mW mW/°C RqJA (Note 1) 143 °C/W PD (Note 2) 1.5 11.8 W mW/°C Thermal Resistance, Junction-to-Ambient RqJA (Note 2) 85 °C/W Thermal Resistance, Junction-to-Lead #1 RqJL (Note 2) 23 °C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 Thermal Resistance, Junction-to-Ambient Total Device Dissipation, TA = 25°C Derate above 25°C (Note: Microdot may be in either location) °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz copper traces. 2. FR-4 @ 500 mm2, 1 oz copper traces. © Semiconductor Components Industries, LLC, 2007 May, 2007 - Rev. 2 1 VF = Specific Device Code M = Date Code G = Pb-Free Package 1 ORDERING INFORMATION Device Package Shipping† NSS12501UW3T2G WDFN3 (Pb-Free) 3000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS12501UW3/D NSS12501UW3T2G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max 12 - - 12 - - 6.0 - - - - 0.1 - - 0.1 200 200 200 200 200 345 330 315 - - 0.007 0.031 0.045 0.070 0.100 0.100 0.008 0.035 0.060 0.100 0.120 0.120 - 0.760 0.900 - 0.730 0.900 150 - - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 12 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) (IC = 3.0 A, VCE = 2.0 V) Collector-Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.020 A) (IC = 3.0 A, IB = 0.030 A) (IC = 4.0 A, IB = 0.400 A) VCE(sat) Base-Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.01 A) VBE(sat) Base-Emitter Turn-on Voltage (Note 3) (IC = 2.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT V V V MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo - 650 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo - 120 pF Delay (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) td - - 90 ns Rise (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) tr - - 100 ns Storage (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) ts - - 320 ns Fall (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) tf - - 100 ns SWITCHING CHARACTERISTICS 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 2 NSS12501UW3T2G 0.2 VCE(sat) = 150°C IC/IB = 10 25°C 0.10 -55 °C 0.05 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.15 IC/IB = 100 150°C 0.15 0.1 0.05 25°C 0 0 0.01 0.001 0.1 1.0 10 0.001 0.1 1.0 10 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1.2 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 150°C (5 V) 575 hFE, DC CURRENT GAIN 0.01 IC, COLLECTOR CURRENT (A) 625 150°C (2 V) 525 475 425 25°C (5 V) 375 25°C (2 V) 325 275 225 -55 °C (5 V) 175 -55 °C (2 V) IC/IB = 10 1.1 1.0 0.9 -55 °C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 125 0.01 0.1 1 10 0.001 Figure 4. Base Emitter Saturation Voltage vs. Collector Current 0.9 -55 °C 0.7 25°C 0.6 0.5 150°C 0.3 0.2 0.001 10 1.0 Figure 3. DC Current Gain vs. Collector Current VCE = 2.0 V 0.4 0.1 IC, COLLECTOR CURRENT (A) 1.0 0.8 0.01 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR-EMITTER VOLTAGE (V) 0.001 VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) VCE(sat) = -55°C 0.01 0.1 1.0 10 1.0 10 mA 100 mA 300 mA IC = 500 mA 0.8 0.6 0.4 0.2 0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn-On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 100 NSS12501UW3T2G 140 Cobo, OUTPUT CAPACITANCE (pF) Cibo (pF) 625 575 525 475 425 375 325 Cobo (pF) 130 120 110 100 90 80 70 275 0 1.0 2.0 4.0 3.0 5.0 6.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1.0 mS 1 10 mS IC (A) Cibo, INPUT CAPACITANCE (pF) 675 100 mS 1.0 S 0.1 Thermal Limit Single Pulse Test at Tamb = 25°C 0.01 0.01 0.1 1.0 10 VCE (Vdc) Figure 9. Safe Operating Area http://onsemi.com 4 100 9.0 10 NSS12501UW3T2G PACKAGE DIMENSIONS WDFN3 CASE 506AU-01 ISSUE O D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 2X 0.10 C 2X ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ 0.10 C DIM A A1 A3 b D D2 E E2 e K L E MIN 0.70 0.00 0.25 1.40 0.90 0.35 MILLIMETERS NOM MAX 0.75 0.80 0.05 0.20 REF 0.30 0.35 2.00 BSC 1.50 1.60 2.00 BSC 1.00 1.10 1.30 BSC 0.35 REF 0.40 0.45 MIN 0.028 0.000 INCHES NOM 0.030 0.008 REF 0.012 0.079 BSC 0.055 0.059 0.079 BSC 0.035 0.039 0.051 BSC 0.014 REF 0.014 0.016 0.010 MAX 0.031 0.002 0.014 0.063 0.043 0.018 TOP VIEW SOLDERING FOOTPRINT* A 0.10 C 1.300 2X 8X 0.08 C SEATING PLANE (A3) SIDE VIEW A1 0.400 0.600 C 0.250 D2 e 1.100 e/2 2X 0.300 2 1 L 0.400 K 0.275 1.600 E2 3 3X b *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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