PD - 9.871B IRF7101 HEXFET® Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 20V D1 D2 RDS(on) = 0.10Ω D2 ID = 3.5A Top View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 100°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Sodering Temperature, for 10 seconds 3.5 2.3 14 2.0 0.016 ± 12 3.0 -55 to + 150 300(1.6mm from case) Units A W W/°C V V/nS °C Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient Min. Typ. Max ––– ––– 62.5 Units °C/W 8/25/97 IRF7101 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Q gs Q gd td(on) tr t d(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 20 ––– ––– ––– 1.0 1.1 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.025 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 7.0 10 24 30 Max. Units Conditions ––– V V GS = 0V, I D = 250µA ––– V/°C Reference to 25°C, I D = 1mA 0.10 VGS = 10V, I D = 1.8A Ω 0.15 VGS = 4.5V, ID = 1.0A 3.0 V VDS = VGS , ID = 250µA ––– S V DS = 15V, ID = 3.5A 2.0 VDS = 20V, VGS = 0V µA 250 VDS = 16V, VGS = 0V, TJ = 125 °C 100 VGS = 12V nA -100 V GS = - 12V 15 I D = 1.8A 2.0 nC VDS = 16V 3.6 VGS = 10V ––– VDD = 10V ––– I D = 1.8A ns ––– R G = 8.2Ω ––– RD = 26Ω D LD Internal Drain Inductance ––– 4.0 ––– LS Internal Source Inductance ––– 6.0 ––– Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 320 250 75 ––– ––– ––– nH pF Between lead,6mm(0.25in.) from package and center of die contact VGS = 0V VDS = 15V ƒ = 1.0MHz G Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 2.0 showing the A G integral reverse ––– ––– 14 p-n junction diode. S ––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V ––– 36 54 ns TJ = 25°C, IF = 1.7A ––– 41 62 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. S IRF7101 C, IRF7101 IRF7101 (Z thJA ) 100 D = 0.50 0.20 10 Thermal Response 0.10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 0.0001 0.001 10 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7101 RD VDS VDS 90% VGS D.U.T. RG + - V DD 10% VGS 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % td(on) Fig 11a. Switching Time Test Circuit tr t d(off) tf Fig 11b. Switching Time Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG .2µF 12V 10V .3µF D.U.T. QGS + V - DS QGD VG VGS 3mA IG ID Charge Current Sampling Resistors Fig 12a. Gate Charge Test Circuit Fig 12b. Basic Gate Charge Waveform IRF7101 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS ISD * IRF7101 Package Outline SO8 Outline INCHES DIM D -B- 5 8 7 6 5 1 2 3 4 e 6X 0.25 (.010) M A M MIN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e K x 45° e1 e1 θ A -C- 0.10 (.004) L 8X A1 B 8X 0.25 (.010) MAX 5 H E -A- 6 C 8X .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC .2284 .2440 5.80 K .011 .019 0.28 0.48 L 0.16 .050 0.41 1.27 8° 0° 8° 0° 6.20 RECOMMENDED FOOTPRINT NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 6 MAX H θ M C A S B S MILLIMETERS MIN 0.72 (.028 ) 8X 6.46 ( .255 ) 1.78 (.070) 8X MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X Part Marking Information SO8 E X A M P LE : TH IS IS A N IR F 7 101 3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X F 7 101 T OP PART NUMBER W AFER LO T C O D E (LA S T 4 D IG IT S ) B O T TO M IRF7101 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) T ER M IN A L N U M B E R 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E ED D IR E C T IO N N O TE S: 1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R. 2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ). 3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 . 33 0. 00 (12 .99 2) M A X. 1 4. 40 ( .5 66 ) 1 2. 40 ( .4 88 ) N O T ES : 1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1. 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