IRF IRF7702PBF

PD-96027
IRF7702PbF
HEXFET® Power MOSFET
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Ultra Low On-Resistance
-1.8V Rated
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.1mm)
Available in Tape & Reel
Lead-Free
VDSS
-12V
ID
0.014@VGS = -4.5V
0.019@VGS = -2.5V
-8.0A
-7.0A
0.027@VGS = -1.8V
-5.8A
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Description
RDS(on) max
HEXFET®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
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TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
±8.0
±7.0
±70
1.5
0.96
0.01
± 8.0
-55 to + 150
V
W/°C
V
°C
Max.
Units
83
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
02/06/06
IRF7702PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min. Typ. Max. Units
Conditions
-12 ––– –––
V
VGS = 0V, ID = -250µA
––– -0.007 ––– V/°C Reference to 25°C, I D = -1mA
––– ––– 0.014
VGS = -4.5V, ID = -8.0A ‚
Ω
––– ––– 0.019
VGS = -2.5V, ID = -7.0A ‚
––– ––– 0.027
VGS = -1.8V, ID = -5.8A ‚
-0.45 ––– -1.2
V
VDS = VGS, ID = -250µA
26 ––– –––
S
VDS = -10V, ID = -8.0A
––– ––– 1.0
VDS = -12V, VGS = 0V
µA
––– ––– -25
VDS = -9.6V, VGS = 0V, TJ = 70°C
––– ––– -100
VGS = -8.0V
nA
––– ––– 100
VGS = 8.0V
––– 54
81
ID = -8.0A
––– 7.8
12
nC
VDS = -9.6V
––– 15
23
VGS = -4.5V‚
––– 16 –––
VDD = -6.0V
ns
––– 21 –––
ID = -1.0A
––– 320 –––
RD = 6.0Ω
––– 250 –––
RG = 6.0Ω ‚
––– 3470 –––
VGS = 0V
––– 1040 –––
pF
VDS = -10V
––– 670 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-1.5
–––
–––
-70
–––
–––
–––
–––
58
41
-1.2
87
62
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.5A, VGS = 0V ‚
TJ = 25°C, IF = -1.5A
di/dt = 100A/µs ‚
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ When mounted on 1 inch square copper board, t<10 sec
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7702PbF
1000
1000
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
TOP
100
10
-1.50V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
-1.50V
10
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
-VDS , Drain-to-Source Voltage (V)
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100.00
1000
-I SD, Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
T J = 25°C
100
TJ = 150 ° C
TJ = 25 ° C
2.0
2.5
3.0
1.00
3.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10.00
VGS = 0V
V DS = -15V
20µs PULSE WIDTH
10
1.5
T J = 150°C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-V SD, Source-toDrain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7702PbF
5000
-VGS , Gate-to-Source Voltage (V)
4000
C, Capacitance (pF)
10
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
3000
2000
1000
0
Coss
Crss
VDS =-9.6V
8
6
4
2
0
1
10
ID = -8.0A
100
0
20
40
60
80
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0.80
1000
ID = -250µA
-IID , Drain Current (A)
-V GS(th) , Variace ( V )
OPERATION IN THIS AREA LIMITED
BY RDS(on)
0.60
0.40
100us
1ms
10
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
0.20
-75
-50
-25
0
25
50
75
100 125
T J , Temperature ( °C )
Fig 7. Threshold Voltage Vs. Temperature
4
100
150
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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8.0
40
6.0
30
Power (W)
-ID , Drain Current (A)
IRF7702PbF
4.0
2.0
0.0
20
10
25
50
75
100
125
150
TC , Case Temperature ( °C)
0
0.01
0.10
1.00
10.00
100.00
Time (sec)
Fig 10. Typical Power Vs. Time
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = -8.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
RDS (on) , Drain-to-Source On Resistance (Ω)
IRF7702PbF
80 100 120 140 160
0.16
0.12
VGS = -2.5V
0.08
VGS = -4.5V
0.04
0.00
0
TJ , Junction Temperature ( °C)
20
40
60
80
100
-I D , Drain Current (A)
Fig 12. Normalized On-Resistance
Vs. Temperature
RDS(on) , Drain-to -Source On Resistance (Ω)
0.20
Fig 13. Typical On-Resistance Vs. Drain
Current
0.020
ID = -8.0A
0.015
0.010
1.5
2.5
3.5
-V GS, Gate -to -Source Voltage (V)
Fig 14. Typical On-Resistance Vs. Gate
Voltage
6
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IRF7702PbF
TSSOP8 Package Outline
Dimensions are shown in millimeters (inches)
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IRF7702PbF
TSSOP8 Part Marking Information
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TSSOP-8 Tape and Reel Information
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Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/06
8
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