FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description Applications FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. Buck Boost Features This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance. -3.5 A, -20 V RDS(ON) = 140mΩ @ VGS = -4.5 V RDS(ON) = 200mΩ @ VGS = -2.5 V Low Profile - 0.8 mm maximun - in the new package MicroFET 3x3 mm PIN 1 A S G C/D A TOP S A 1 6 A S 2 5 S G 3 4 D D BOTTOM MLP 3x3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain-Source Voltage Parameter VGSS Gate-Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed Schottky Repetitive Peak Reverse voltage IO Schottky Average Forward Current Power dissipation (Steady State) TJ, TSTG Units V ±12 V -3.5 A -10 VRRM PD Ratings -20 20 V (Note 1a) 2 A (Note 1a) (Note 1b) 2 Operating and Storage Junction Temperature Range W 0.8 o -55 to +150 C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) Thermal Resistance, Junction-to-Ambient (Note 1b) o 60 C/W oC/W 145 Package Marking and Ordering Information Device Marking 2P110 Device FDFM2P110 ©2005 Fairchild Semiconductor Corporation Reel Size 7inch 1 Tape Width 12mm Quantity 3000 units FDFM2P110 Rev. C4 (W) FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode August 2005 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ID = -250µA, VGS = 0V -20 - - V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250µA, Referenced to 25°C - -11 - mV/°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = -16V - - -1 µA IGSS Gate-Body Leakage, VGS = ±12V, VDS = 0V - - ±100 nA On Characteristics (Note 2) VGS(TH) Gate Threshold Voltage VDS = VGS, ID = -250µA -0.6 -1.0 -1.5 V ∆VGS(TH) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = -250µA, Referenced to 25°C - 3 - mV/°C ID = -3.5A, VGS = -4.5V - 101 140 ID = -3.0A, VGS = -2.5V - 145 200 ID = -3.5A, VGS = -4.5V, TJ = 125°C - 136 202 -10 - - A - 6 - S - 280 - pF - 65 - pF - 35 - pF - 7 - Ω - 8 16 ns - 12 22 ns - 11 20 ns RDS(ON) Static Drain-Source On-Resistance ID(ON) On-State Drain Current VGS = -2.5V, VDS = -5V gFS Forward Transconductance ID = -3.5A, VDS = -5V mΩ Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance RG Gate Resistance VDS = -10V, VGS = 0V, f = 1MHz f = 1MHz Switching Characteristics (Note 2) td(ON) Turn-On Delay Time tr Turn-On Rise Time td(OFF) Turn-Off Delay Time tf Turn-Off Fall Time - 3.2 6.4 ns Qg Total Gate Charge - 3 4 nC Qgs Gate-Source Charge - 0.7 - nC Qgd Gate-Drain Charge - 1 - nC A VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 16Ω VDS = -10V, ID = -3.5A, VGS = -4.5V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0V, IS = -2 A (Note 2) IF= -3.5A, dIF/dt=100A/µs - - -2 - -0.9 -1.2 V - 13 - ns - 3 - nC Schottky Diode Characteristic VR Reverse Voltage IR = 1mA IR Reverse Leakage VR = 5V VF Forward Voltage IF = 1A 2 20 TJ = 25°C TJ = 100°C TJ = 25°C - - - - 0.32 - V 100 µA 10 mA 0.39 V FDFM2P110 Rev. C4 (W) FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθCA is guaranteed by design while RθCA is determined by the user's board design. a) 60oC/W when mounted on a 1in2 pad of 2 oz copper b) 145oC/W whe mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3 FDFM2P110 Rev. C4 (W) FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TA = 25°C unless otherwise noted 2.4 VGS = -4.5V -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 10 -3.0V 8 6 -2.5V 4 -2.0V 2 2.2 2 VGS = -2.5V 1.8 1.6 -3.0V 1.4 -3.5V 1.2 0 1 2 3 0 5 4 2 4 Figure 1. On-Region Characteristics 8 0.44 RDS(ON), ON-RESISTANCE (OHM) ID = -3.5A VGS = -4.5V 1.4 1.2 1 0.8 0.6 -50 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 ID = -1.8A 0.4 0.36 0.32 0.28 TA = 125oC 0.24 0.2 0.16 TA = 25oC 0.12 0.08 -25 0 25 50 75 100 125 150 1 2 TJ, JUNCTION TEMPERATURE (oC) 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 8 100 TA = -55oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V 25oC 6 125oC 4 2 0 0.5 6 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.5V 0.8 0 -ID, DRAIN CURRENT (A) -4.0V 1 VGS = 0V 10 TA = 125oC 1 25oC 0.1 o -55 C 0.01 0.001 0.0001 1 1.5 2 2.5 3 0.2 3.5 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4 FDFM2P110 Rev. C4 (W) FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics 500 ID = -3.5A VDS = -5V f = 1MHz VGS = 0 V -10V 400 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 -15V 3 2 Ciss 300 200 Coss 1 100 0 0 Crss 0 1 2 3 0 4 4 Figure 7. Gate Charge Characteristics 12 16 20 Figure 8. Capacitance Characteristics IR, REVERSE LEAKAGE CURRENT (A) 10 IF, FORWARD LEAKAGE CURRENT (A) 8 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 125oC 1 TJ = 25oC 0.1 0.01 0.1 o TJ = 125 C 0.01 o 0.001 TJ = 100 C 0.0001 o TJ = 25 C 0.00001 0.000001 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 VF, FORWARD VOLTAGE (V) 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage Figure 10. Schottky Diode Reverse Current Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 5 FDFM2P110 Rev. C4 (W) FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFM2P110 Rev. C4 (W) 6 The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 7 FDFM2P110 Rev. C4 (W) FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode TRADEMARKS