FAIRCHILD FDY3001NZ

FDY3001NZ
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This Dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = 2.5v.
• 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.5 V
RDS(ON) = 7 Ω @ VGS = 2.5 V
Applications
• ESD protection diode (note 3)
• Li-Ion Battery Pack
• RoHS Compliant
6
1
2
5
4
1
6
D1
G1
2
5
G2
D2
3
4
S2
3
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
PD
– Pulsed
Power Dissipation (Steady State)
– Continuous
(Note 1a) 1a)
(Note 1a) 1a)
(Note 1b) 1
TJ, TSTG
S1
Operating and Storage Junction Temperature
Range
Ratings
Units
20
V
V
± 12
200
mA
1000
625
446
mW
–55 to +150
°C
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 1a)
200
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b) 1
280
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
D
FDY3001NZ
7 ’’
8 mm
3000 units
2006 Fairchild Semiconductor Corporation
FDY3001NZ Rev A
www.fairchildsemi.com
FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
January 2006
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage,
On Characteristics
VGS = 0 V,
ID = 250 µA
Min
Typ Max
Units
20
V
14
ID = 250 µA, Referenced to 25°C
VDS = 16 V,
VGS = 0 V
VGS = ± 12 V, VDS = 0 V
VGS = ± 4.5 V, VDS = 0 V
mV/°C
1
± 10
±1
µA
µA
µA
1.5
V
mV/°C
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
ID = 250 µA
VDS = VGS,
ID = 250 µA, Referenced to 25°C
0.6
VGS = 4.5 V,
ID = 200 mA
VGS = 2.5 V,
ID = 175 mA
VGS = 1.8 V,
ID = 150 mA
ID = 20 mA
VGS = 1.5 V
VGS = 4.5 V, ID=200mA, TJ = 125°C
VDS = 5 V,
ID = 200 mA
1.0
–3
5
7
9
10
7
Ω
1.8
S
60
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
20
pF
10
pF
(Note 2)
VDD = 10 V,
VGS = 4.5 V,
VDS = 10 V,
VGS = 4.5 V
ID = 1 A,
RGEN = 6 Ω
ID = 200 mA,
6
12
ns
8
16
ns
8
16
ns
2.4
4.8
ns
0.8
1.1
nC
0.16
nC
0.26
nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 150 mA
0.7
(Note 2)
IF = 200 mA,
dIF/dt = 100 A/µs
1.2
V
8
nS
1
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user'
s board design.
a)
200°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
paper
Scale 1 : 1 on letter size
2. Pulse Test: Pulse
Width < 300µs, Duty Cycle < 2.0%
3. The diode connected
between the gate and source serves
only as protection againts ESD. No
gate overvoltage rating is implied.
FDY3001NZ Rev A
www.fairchildsemi.com
FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
Electrical Characteristics
VGS = 4.5V
2.6
3.0V
2.5V
ID, DRAIN CURRENT (A)
3.5V
0.8
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1
2.0V
0.6
0.4
0.2
2.4
VGS = 2.0V
2.2
2
1.8
1.6
2.5V
1.4
3.0V
1.2
0
0.25
0.5
0.75
0
1
0.2
0.4
0.6
0.8
1
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1
1.6
ID = 200mA
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
0.8
0
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
ID = 100mA
0.9
0.8
0.7
0.6
TA = 125oC
0.5
0.4
TA = 25oC
0.3
0.2
150
1
o
2
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
IS, REVERSE DRAIN CURRENT (A)
1
VDS = 5V
ID, DRAIN CURRENT (A)
3.5V
1
0.8
0.6
0.4
TA = 125oC
0.2
25oC
-55oC
VGS = 0V
0.1
TA = 125oC
0.01
25oC
-55oC
0.001
0.0001
0
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
FDY3001NZ Rev A
2.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
Typical Characteristics
100
ID = 200mA
f = 1MHz
VGS = 0 V
90
4
VDS = 5V
80
10V
3
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
15V
2
1
Ciss
70
60
50
40
Coss
30
20
10
0
Crss
0
0
0.2
0.4
0.6
0.8
1
0
4
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
16
20
30
1ms
1s
DC
VGS = 4.5V
SINGLE PULSE
RθJA = 280oC/W
0.1
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
1
10ms
100ms
10s
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 280°C/W
TA = 25°C
25
20
15
10
5
0
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
12
Figure 8. Capacitance Characteristics.
10
ID, DRAIN CURRENT (A)
8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA =280 °C/W
0.2
0.1
P(pk)
0.1
t1
0.05
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDY3001NZ Rev A
www.fairchildsemi.com
FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
Typical Characteristics
1.70
1.50
6
0.50
0.30
0.15
0.50
4
1.70
1.55
1.20 BSC
1
1.25
1.80
3
(0.20)
0.30
0.50
0.55
LAND PATTERN RECOMMENDATION
1.00
0.60
0.56
0.18
0.10
SEE DETAIL A
0.35 BSC
0.20 BSC
0.10
0.00
DETAIL A
SCALE 2 : 1
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC89 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
FDY3001NZ Rev A
www.fairchildsemi.com
FDY3001NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
Dimensional Outline and Pad Layout
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As used herein:
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support device or system whose failure to perform can
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the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18