tm FDFC3N108 N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode General Description Features This N-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It is combined with a low forward drop Schottky that is isolated from the MOSFET, providing a compact power solution for battery power management and DC/DC converter applications. • 3 A, 20 V RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) Applications • Battery management/Charger Application • DC/DC Conversion D2 S1 D1 G2 SuperSOT TM -6 Pin 1 S2 6 C S 2 5 NC G 3 4 D G1 SuperSOT™-6 MOSFET Maximum Ratings Symbol A 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ±12 V ID Drain Current (Note 1a) 3 A PD Maximum Power Dissipation (Note 1a) 0.96 (Note 1b) 0.90 (Note 1c) 0.70 – Continuous – Pulsed TJ, Tstg 12 Operating and Storage Junction Temperature Range –55 to +150 W °C Schottky Diode Maximum Ratings VRRM Repetitive Peak reverse voltage 20 V IO Average Forward Current 2.0 A (Note 1a) 130 °C/W (Note 1) 60 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .108 FDFC3N108 7’’ 8mm 3000 units 2007 Fairchild Semiconductor Corporation FDFC3N108 Rev C2 (W) FDFC3N108 N-Channel 1.8V Specified PowerTrench®MOSFET with Schottky Diode May 2007 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA VGS = 0 V, ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±12 V, VDS = 0 V ±100 nA 1.5 V mV/°C 70 95 106 mΩ BVDSS On Characteristics 20 ID = 250 µA, Referenced to 25°C V mV/°C 12 (Note 2) VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current gFS Forward Transconductance VGS = 4.5 V, VGS = 2.5 V, VGS = 4.5 V, VGS = 4.5 V, VDS = 5 V, ID = 3 A ID = 2.5 A ID = 3 A, TJ=125°C VDS = 5 V ID = 3 A VDS = 10 V, f = 1.0 MHz VGS = 0 V, 0.5 0.9 –3 56 73 78 A 12 10 S 355 85 pF pF 45 pF 2.0 Ω Dynamic Characteristics Ciss Coss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Qgs Total Gate Charge Gate–Source Charge Qgd Gate–Drain Charge V GS = 15 mV, f = 1.0 MHz (Note 2) VDD = 10 V, VGS = 4.5 V, VDS = 10V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 3 A, 6 7 12 14 ns ns 20 36 ns 1 2 ns 3.5 0.7 4.9 nC nC 1.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 0.8 A (Note 2) Voltage Diode Reverse Recovery Time IF = 3 A, Diode Reverse Recovery Charge diF/dt = 100 A/µs 0.8 1.2 A V 12 nS 3 nC Schottky Diode Characteristic IR Reverse Leakage VR = 20V VF Forward Voltage IF = 1A IF = 2A TJ = 25 oC TJ = 100 oC 363 449 250 10 425 550 µA mA mV FDFC3N108 Rev C2 (W) FDFC3N108 N-Channel 1.8V Specified PowerTrench®MOSFET with Schottky Diode Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 130 °C/W when mounted on a 0.125 in2 pad of 2 oz. copper. b) 140 °C/W when mounted on a .004 in2 pad of 2 oz copper c) 180 C°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDFC3N108 Rev C2 (W) FDFC3N108 N-Channel 1.8V Specified PowerTrench®MOSFET with Schottky Diode Electrical Characteristics 6 1.8 5 2.5V 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) VGS = 4.5V 2.0V 4 3 2 1 1.5V 0 0.5 1 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5V 1.2 3.0V 3.5V 1 1.5 0 Figure 1. On-Region Characteristics. 4.0 V 4.5 V 1 2 3 4 ID, DRAIN CURRENT (A) 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.18 1.6 ID = 3.0A VGS = 4.5V ID = 1.5A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 0.8 0 1.4 1.2 1 0.8 0.155 0.13 0.105 o TA = 125 C 0.08 0.055 TA = 25oC 0.03 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 0 150 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 12 100 TA = -55oC VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 125oC 10 ID, DRAIN CURRENT (A) VGS = 2.0V 1.6 8 o 25 C 6 4 2 0 10 1 o TA = 125 C 0.1 25oC -55oC 0.01 0.001 0.0001 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFC3N108 Rev C2 (W) FDFC3N108 N-Channel 1.8V Specified PowerTrench®MOSFET with Schottky Diode Typical Characteristics 5 500 f = 1MHz VGS = 0 V VDS = -5V 4 400 -15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) ID = 3.0A -10V 3 2 Ciss 300 200 Coss 1 100 0 0 Crss 0 1 2 3 Qg, GATE CHARGE (nC) 4 5 0 Figure 7. Gate Charge Characteristics. 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 100 50 SINGLE PULSE RθJA =180oC/W RDS(ON) LIMIT 10 40 100µs TA = 25oC 1ms 1 POWER (W) 10ms 100ms 1s DC 0.1 VGS = 4.5V SINGLE PULSE o RθJA = 180 C/W 0.01 30 20 10 TA = 25oC 0.001 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.0001 100 Figure 9. Schottky Diode Forward Voltage. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 20 0.001 0.01 0.1 1 SINGLE PULSE TIME (SEC) 10 100 Figure 10. Schottky Diode Reverse Current. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 180 °C/W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design. FDFC3N108 Rev C2 (W) FDFC3N108 N-Channel 1.8V Specified PowerTrench®MOSFET with Schottky Diode Typical Characteristics tm TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroPak™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise® ™ TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Definition Rev. I28 ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com