FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® MOSFET Features Applications ■ 3.2 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ Battery management General Description ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ FLMP SC75 package: Enhanced thermal performance in industry-standard package size This dual N-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Bottom Drain Contact S2 S1 4 3 5 2 6 1 G1 G2 S2 S1 Bottom Drain Contact Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Power Dissipation for single Operation TJ, TSTG Operating and Storage Junction Temperature Range – Continuous Ratings Units 20 V ±12 V (Note 1a) 3.2 A (Note 1a) 1.5 W –55 to +150 °C °C/W – Pulsed 12 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 80 RθJC Thermal Resistance, Junction-to-Case 5 Packge Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .F FDJ1028N 7" 8mm 3000 units ©2005 Fairchild Semiconductor Corporation FDJ1028N Rev. B3 (W) 1 www.fairchildsemi.com FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® MOSFET August 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆ TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±12 V, VDS = 0 V ±100 nA 1.5 V 20 V mV/°C 13 On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆ TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –3 RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 3.2 A VGS = 2.5 V, ID = 2.7 A VGS = 4.5 V, ID = 3.2A, TJ = 125°C 70 100 83 gFS Forward Transconductance VDS = 5 V, ID = 3.2 A 7.5 S VDS = 10 V, VGS = 0 V, f = 1.0 MHz 200 pF 0.6 1.0 mV/°C 90 130 132 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance f = 1.0 MHz 50 pF 30 pF 3 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 7 14 ns 8 16 ns td(off) Turn–Off Delay Time 11 20 ns tf Turn–Off Fall Time 2 4 ns 2 3 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 10 V, ID = 3.2 A, VGS = 4.5 V nC 0.4 nC 1.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.25 A (Note 2) 0.8 1.25 A 1.2 V trr Diode Reverse Recovery Time nS Diode Reverse Recovery Charge IF = 3.2 A, diF/dt = 100 A/µs 11 Qrr 2.5 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 80°C/W when mounted on a 1in2 pad of 2 oz copper (Single Operation). b) 140°C/W when mounted on a minimum pad of 2 oz copper (Single Operation). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2 FDJ1028N Rev. B3 (W) www.fairchildsemi.com FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted 12 2.2 3.5V 3.0V R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V ID, DRAIN CURRENT (A) 10 8 2.5V 6 4 2.0V 2 0 2 VGS = 2.5V 1.8 1.6 3.0V 1.4 3.5V 1.2 4.0V 0.8 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.28 I D = 3.2A VGS = 4.5V ID = 1.6A RDS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 1 1.4 1.2 1 0.8 0.24 0.2 0.16 TA = 125°C 0.12 0.08 TA = 25°C 0.6 0.04 -50 -25 0 25 50 75 100 125 1 150 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 VGS = 0V TA = -55°C IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID , DRAIN CURRENT (A) 2 TJ, JUNCTION TEMPERATURE (°C) 25°C 8 125°C 6 4 2 1 TA = 125°C 0.1 25°C 0.01 -55°C 0.001 0.0001 0 1 1.5 2 2.5 3 0 3.5 VGS , GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDJ1028N Rev. B3 (W) 0.2 www.fairchildsemi.com FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® MOSFET Typical Characteristics 300 f = 1MHz VGS = 0 V ID = 3.2A VDS = 5V 10V 250 8 C ISS CAPACITANCE (pF) V GS, GATE-SOURCE VOLTAGE (V) 10 15V 6 4 200 150 100 2 C OSS 50 C RSS 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 10 15 20 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 10 RDS(ON) LIMIT 10 P(pk), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 5 Q g, GATE CHARGE (nC) 100µs 1ms 10ms 1s 1 DC 100ms 10s VGS = 4.5V SINGLE PULSE RθJA = 140°C/W 0.1 TA = 25°C 1 10 6 4 2 0 0.001 0.01 0.1 SINGLE PULSE RθJA = 140°C/W TA = 25°C 8 100 0.01 0.1 1 10 100 1000 VDS , DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 R θJA(t) = r(t) * R θJA R θ JA = 140 °C/W 0.2 P(pk) 0.1 0.1 t1 0.05 t2 T J - T A = P * R θ JA(t) Duty Cycle, D = t 1 /t 2 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 4 FDJ1028N Rev. B3 (W) www.fairchildsemi.com FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® MOSFET Typical Characteristics PKG CL DRAIN 1 PKG CL (0.24) (0.18) 3 0.30 MIN PKG CL 0.20 (0.73) (0.46) 0.84 (0.50) 6 DRAIN 1 2.35 MIN PKG CL 1.35 0.60 4 DRAIN 2 0.50 MIN Bottom View 1 3 DRAIN 2 TERMINAL 0.50 1.70 1.50 PKG CL A 1.00 Recommended Landing Pattern B 4 6 4 6 DRAIN 1 TERMINAL 0.30 0.20 1.75 1.55 PKG CL 1 3 0.275 0.125 0.075 M A B (0.20) 0.50 1.00 Top View PKG CL 0.80 0.65 SEATING PLANE PKG CL 0.225 0.075 1.075 0.925 2.15 1.85 5 FDJ1028N Rev. B3 (W) www.fairchildsemi.com FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® MOSFET Dimensional Outline and Pad Layout TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20