FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20V, -3A, 150mΩ Features General Description Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A The FDFC2P100 combine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A Low Gate Charge (3.4nC typ) Compact industry standard SuperSOTTM-6 package This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Significant improvement of Thermal Characteristics and Power Dissipation via replacement of independently connected Schottky with internal connection of Schottky Diode Cathode pn to P-Channel PowerTrench MosFET Drain pin. Schottky: VF < 0.45 V at IF = 1A RoHS Compliant C/D 4 3 G C/D 5 2 S 6 1 A C/D PIN 1 SuperSOTTM-6 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed Units V ±12 V -3 -6 Power Dissipation PD Ratings -20 (Note 1a) (Note 1b) VRRM Schotty Repetitive Peak Reverse Voltage IO Schotty Average Forward Current TJ, TSTG Operating and Storage Junction Temperature Range (Note 1a) A 1.5 0.8 W 20 V 1 A -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 87 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 166 °C/W Package Marking and Ordering Information Device Marking .100 Device FDFC2P100 ©2006 Fairchild Semiconductor Corporation FDFC2P100 Rev.C (W) Package SSOT-6 1 Reel Size 7” Tape Width 8mm Quantity 3000units www.fairchildsemi.com FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode October 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient -20 V ID = -250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = -16V -1 µA IGSS Gate to Source Leakage Current VGS = ±12V, VDS = 0V ±100 µA -1.5 V mV/°C -12 On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C rDS(on) Drain to Source On-Resistance gFS Forward Transconductance -0.6 -0.9 3 mV/°C VGS = -4.5V, ID = -3.0A 95 150 VGS = -2.5V, ID = -2.2A 150 200 VGS = -4.5V, ID = -3.0A, TJ = 125°C 130 252 VDS = -5V, ID = -3.0A 5.4 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -10V, VGS = 0V, f = 1MHz 335 445 pF 80 105 pF 40 60 pF Ω f = 1MHz 6 VDD = -10V, ID = -3.0A VGS = -4.5V, RGEN = 6Ω 9 16 ns 11 20 ns 12 22 ns 4 8 ns 3.4 4.7 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at -10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VGS = 0V to -10V VDD = -4.5V ID = -3.0A 0.9 nC 1.0 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain tio Source Diode forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -1.2A -1.2 (Note 2) IF = -3.0A, di/dt = 100A/µs -0.8 -1.2 A V 17 ns 5 nC Schottky Diode Characteristics VR = 20V IR Reverse Leakage VR = 10V IF = 500mA VF Forward Voltage IF = 1A FDFC2P100 Rev.C (W) 2 TJ = 25°C 26 400 µA TJ = 100C 2.7 20 mA TJ = 25°C 23 200 µA TJ = 100°C 2.5 10 mA TJ = 25°C 0.31 0.4 TJ = 100°C 0.24 0.35 TJ = 25°C 0.37 0.45 TJ = 100°C 0.3 0.42 V www.fairchildsemi.com FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted b) 166°C/W when mounted on a minimun pad a) 87°C/W when mounted on a 1in2 pad of 2 oz copper 2: Pulse Test: Pulse Width <300 ms, Duty Cycle < 2.0% FDFC2P100 Rev.C (W) 3 www.fairchildsemi.com FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 VGS =-4.5V -ID, DRAIN CURRENT (A) 5 VGS = -2.5V 4 VGS = -3.5V VGS = -3.0V 3 2 VGS = -2.0V 1 PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 0 0.0 0.5 1.0 1.5 2.0 2.5 2.6 VGS = -2.0V 2.4 2.2 2.0 VGS = -2.5V 1.8 1.6 1.4 1.2 1.0 0.8 VGS = -4.5V 0 1 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 Figure 3. Normalized On- Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX VDD = - 5V 4 3 2 TJ = 1 125oC TJ = 25oC TJ = - 0 0.5 55oC 1.0 1.5 2.0 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 3.0 Figure 5. Transfer Characteristics FDFC2P100 Rev.C (W) 6 0.35 ID = -1.5A PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 0.30 0.25 0.20 TJ = 125oC 0.15 0.10 0.05 1 TJ = 25oC 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 4. On-Resistance vs Gate to Source Voltage 6 5 5 0.40 ID = -3A VGS = -4.5V 1.4 2 3 4 -ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (OHM) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 VGS = -3.0V VGS = -3.5V -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 10 VGS = 0V 1 TJ = 125oC 0.1 TJ = 25oC 0.01 1E-3 TJ = -55oC 1E-4 0.0 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted 500 ID = - 3A f = 1MHz VGS = 0V VDD = - 5V 4 400 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 5 VDD = -10V 3 VDD = -15V 2 1 Ciss 300 200 Coss 100 Crss 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4.5 0 5 10 15 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) Figure 8. Capacitance vs Drain to Source Voltage 1 IR, REVERSE LEAKAGE CURRENT(A) IF, FORWARD LEAKAGE CURRENT (A) Figure 7. Gate Charge Characteristics TJ = 125oC 0.1 TJ = 100oC 0.1 o TJ = 125 C 0.01 1E-3 0.01 TJ = 25oC o TJ = 100 C 1E-4 1E-3 1E-5 1E-4 0.0 0.1 0.2 0.3 VF, FORWARD VOLTAGE (V) 20 0.4 o TJ = 25 C 0 5 10 15 20 VR, REVERSE VOLTAGE(V) Figure 9. Schottky Diode Forward Voltage Figure 10. Schottky Diode Reverse Current 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 1E-3 -5 10 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -4 10 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION (s) 1 10 2 10 3 10 Figure 11. Transient Thermal Response Curve FDFC2P100 Rev.C (W) 5 www.fairchildsemi.com FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21