April 2008 FDFMA3N109 tm ® Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package MOSFET: • 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V solution for a boost topology in cellular handset and RDS(ON) = 140 mΩ @ VGS = 3.0 V other ultra-portable applications. It features a MOSFET RDS(ON) = 163 mΩ @ VGS = 2.5 V with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. PIN 1 A NC K K PD TJ, TSTG VRRM IO • RoHS Compliant A 1 6 K NC 2 5 G D 3 4 S D G MicroFET 2x2 VDS VGS ID • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm • HBM ESD protection level = 1.8kV typical (Note 3) D S Absolute Maximum Ratings Symbol Schottky: • VF < 0.46 V @ 500mA TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC = 25°C, VGS = 4.5V) – Continuous (TC = 25°C, VGS = 2.5V) – Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Temperature Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Ratings 30 (Note 1a) (Note 1b) Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking 109 ©2008 Fairchild Semiconductor Corporation Device FDFMA3N109 Reel Size 7’’ (Note 1a) (Note 1b) (Note 1c) (Note 1d) ±12 2.9 2.7 10 1.5 0.65 –55 to +150 28 1 83 193 101 228 Tape width 8mm Units V V A W °C V A °C/W Quantity 3000 units FDFMA3N109 Rev B2 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS RDS(on) V ID = 250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA Gate–Body Leakage Current VGS = ± 12 V, VDS = 0 V ±10 µA 1.5 V Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C Ciss Input Capacitance Coss Output Capacitance Crss RG Reverse Transfer Capacitance Gate Resistance Switching Characteristics 25 0.4 1.0 mV/°C –3 mV/°C VGS = 4.5V, ID = 2.9A VGS = 3.0V, ID = 2.7A VGS = 2.5V, ID = 2.5A VGS = 4.5V, ID = 2.9A, TC = 85°C VGS = 3.0V, ID = 2.7A, TC = 150°C VGS = 2.5V, ID = 2.5A, TC = 150°C 75 84 92 95 138 150 123 140 163 166 203 268 mΩ VDS = 15 V, f = 1.0 MHz 190 220 pF 30 40 pF 20 4.6 30 pF 6 12 ns ns Dynamic Characteristics td(on) 30 Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient On Characteristics VGS(th) ∆VGS(th) ∆TJ Min Typ Max Units V GS = 0 V, V GS = 0 V, f = 1.0 MHz VDD = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω Ω (Note 2) Turn–On Delay Time tr Turn–On Rise Time 8 16 td(off) Turn–Off Delay Time 12 21 ns tf Turn–Off Fall Time 2 4 ns 2.4 3.0 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 4.5 V ID = 2.9 A, nC 0.75 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IS = 2.0 A IS = 1.1 A IF = 2.9 A, dIF/dt = 100 A/µs 0.9 0.8 10 2.9 A 1.2 1.2 V ns 2 Schottky Diode Characteristics IR Reverse Leakage VR = 28 V TJ = 25°C TJ = 85°C VF Forward Voltage IF = 1 A TJ = 25°C TJ = 85°C VF Forward Voltage IF = 500 mA TJ = 25°C TJ = 85°C nC 0.35 nC 10 100 0.07 0.50 0.49 0.40 0.36 4.7 0.57 0.60 0.46 0.43 µA mA V V FDFMA3N109 Rev B2 FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TA = 25°C unless otherwise noted Notes: 2 1. RθJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) MOSFET RθJA = 83°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (b) MOSFET RθJA = 193°C/W when mounted on a minimum pad of 2 oz copper (c) Schottky RθJA = 101°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (d) Schottky RθJA = 228°C/W when mounted on a minimum pad of 2 oz copper a) 83oC/W when mounted on 2 a 1in pad of 2 oz copper b) 193oC/W when mounted on a minimum pad of 2 oz copper c)101 oC/W when mounted on 2 a 1in pad of 2 oz copper b) 228oC/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDFMA3N109 Rev B2 FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics 1.8 10 ID, DRAIN CURRENT (A) 8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V VGS = 4.5V 2.7V 3.5V 6 2.9V 2.0V 4 2 1.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 VGS = 2.0V 1.6 1.4 0 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 2 4 6 ID, DRAIN CURRENT (A) 8 10 ID = 1.45A 1 0.8 0.6 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 0.2 0.16 o TA = 125 C 0.12 0.08 o TA = 25 C 0.04 150 0 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 100 o TA = -55 C VGS = 0V o 125 C 8 -IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 4.0V 0.24 1.2 -25 3.5V Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 -50 2.9V 0.8 3 ID = 2.9A VGS = 4.5V 1.6 2.7V 1 Figure 1. On-Region Characteristics. 1.8 2.5V 1.2 25oC 6 4 2 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 10 1 0.1 o TA = 125 C 0.01 25oC -55oC 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFMA3N109 Rev B2 FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics 300 10 f = 1MHz VGS = 0 V 250 8 VDS = 10V 20V 6 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) ID = 2.9A 15V 4 200 Ciss 150 100 2 50 0 0 Coss Crss 0 1 2 3 4 Qg, GATE CHARGE (nC) 5 0 6 Figure 7. Gate Charge Characteristics. 30 0.1 IR, REVERSE LEAKAGE CURRENT (A) IF, FORWARD LEAKAGE CURRENT (A) 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 10 1 o TJ = 125 C o 0.1 TJ = 25 C 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (V) 0.7 0.8 Figure 9. Schottky Diode Forward Voltage. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 5 o TJ = 125 C 0.01 0.001 o TJ = 100 C 0.0001 0.00001 o TJ = 25 C 0.000001 0 5 10 15 20 VR, REVERSE VOLTAGE (V) 25 30 Figure 10. Schottky Diode Reverse Current. 1 RθJA(t) = r(t) * RθJA RθJA =193°C/W D = 0.5 0.2 0.1 P(pk) 0.1 0.05 t1 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDFMA3N109 Rev B2 FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Dimensional Outline and Pad Layout rev3 FDFMA3N109 Rev B2 The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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