FAIRCHILD FCP16N60_0703

SuperFETTM
FCP16N60 / FCPF16N60
600V N-Channel MOSFET
Features
Description
• 650V @TJ = 150°C
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
• Typ. Rds(on) = 0.22Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested
D
G
G DS
TO-220
FCP Series
TO-220F
GD S
FCPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
FCP16N60
FCPF16N60
600
Unit
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
16
A
EAR
Repetitive Avalanche Energy
(Note 1)
20.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(TC = 25°C)
- Derate above 25°C
V
16
10.1
16*
10.1*
A
A
48
48*
A
± 30
V
450
mJ
4.5
V/ns
167
1.33
37.9
0.3
W
W/°C
-55 to +150
°C
300
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FCP16N60
FCPF16N60
Unit
RθJC
Thermal Resistance, Junction-to-Case
0.75
3.3
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2007 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. B
1
www.fairchildsemi.com
FCP16N60 / FCPF16N60 600V N-Channel MOSFET
March 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCP16N60
FCP16N60
TO-220
-
-
50
FCPF16N60
FCPF16N60
TO-220F
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
600
--
--
V
VGS = 0V, ID = 250μA, TJ = 150°C
--
650
--
V
ID = 250μA, Referenced to 25°C
--
0.6
--
V/°C
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
BVDSS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 16A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.22
0.26
Ω
--
11.5
--
S
--
1730
2250
pF
--
960
1150
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 8A
gFS
Forward Transconductance
VDS = 40V, ID = 8A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
85
--
pF
Coss
Output Capacitance
VDS = 480V, VGS = 0V, f = 1.0MHz
--
45
60
pF
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V
--
110
--
pF
VDD = 300V, ID = 16A
RG = 25Ω
--
42
85
ns
--
130
270
ns
--
165
340
ns
--
90
190
ns
--
55
70
nC
--
10.5
13
nC
--
28
--
nC
16
A
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 480V, ID = 16A
VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
48
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS =16A
--
--
1.4
V
trr
Reverse Recovery Time
435
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 16A
dIF/dt =100A/μs
--
Qrr
--
7.0
--
μC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 16A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCP16N60 / FCPF16N60 Rev. B
2
www.fairchildsemi.com
FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
10
2
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
ID , Drain Current [A]
ID, Drain Current [A]
Top :
0
10
1
10
o
150 C
o
25 C
o
-55 C
0
10
*Note:
1. VDS = 40V
*Notes :
1. 250μs Pulse Test
ο
2. 250μs Pulse Test
2. TC = 25 C
-1
0
10
2
1
10
10
4
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2
0.5
VGS = 10V
0.4
0.3
VGS = 20V
0.2
0.1
1
10
o
o
150 C
0
10
25 C
*Notes :
1. VGS = 0V
2. 250 μs Pulse Test
o
*Note : TJ = 25 C
0.0
0
5
10
15
20
25
30
35
40
45
50
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Crss = Cgd
5000
Coss
4000
*Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz
2000
1000
Crss
0
-1
10
0
10
1.4
1.6
10
VDS = 100V
10
VDS = 250V
VDS = 480V
8
6
4
2
*Note : ID = 16A
0
1
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FCP16N60 / FCPF16N60 Rev. B
1.2
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
6000
1.0
Figure 6. Gate Charge Characteristics
7000
3000
0.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
10
10
IDR , Reverse Drain Current [A]
RDS(ON) [Ω],
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.6
Drain-Source On-Resistance
6
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
*Notes :
1. VGS = 0 V
0.9
2. ID = 250 μA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
*Notes :
1. VGS = 10 V
0.5
2. ID = 8 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
o
TJ, Junction Temperature [ C]
ID, Drain Current [A]
ID, Drain Current [A]
10 us
1 ms
DC
0
10
*Notes :
o
1. TC = 25 C
-1
10
100 us
1 ms
1
10
10 ms
100 ms
0
10
DC
*Notes :
o
1. TC = 25 C
-1
10
o
2. TJ = 150 C
o
2. TJ = 150 C
3. Single Pulse
3. Single Pulse
-2
-2
10
200
10
10 us
100 us
1
150
Operation in This Area
is Limited by R DS(on)
2
10
100
Figure 9-2. Maximum Safe Operating Area
for FCPF16N60
Operation in This Area
is Limited by R DS(on)
2
50
o
Figure 9-1. Maximum Safe Operating Area
for FCP16N60
10
0
TJ, Junction Temperature [ C]
0
10
1
2
10
10
3
10
0
1
10
10
2
10
10
3
10
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
20
ID, Drain Current [A]
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [°C]
FCP16N60 / FCPF16N60 Rev. B
4
www.fairchildsemi.com
FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Figure 11-1. Transient Thermal Response Curve (FCP16N60)
ZθJC(t), Thermal Response
10
0
D = 0 .5
* N o te s :
o
1 . Z θ JC (t) = 0 .7 5 C /W M a x.
0 .2
10
-1
2 . D u ty F a c to r, D = t 1 /t 2
0 .1
3 . T J M - T C = P D M * Z θ JC (t)
PDM
0 .0 5
t1
0 .0 2
0 .0 1
10
t2
s in g le p u ls e
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
ZθJC(t), Thermal Response
Figure 11-2. Transient Thermal Response Curve (FCPF16N60)
10
1
10
0
D = 0 .5
0 .2
0 .1
*N o te s :
o
1 . Z θ J C (t) = 3 .3 C /W M a x .
0 .0 5
10
-1
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .0 2
PDM
0 .0 1
t1
10
s in g le p u ls e
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FCP16N60 / FCPF16N60 Rev. B
5
www.fairchildsemi.com
FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCP16N60 / FCPF16N60 Rev. B
6
www.fairchildsemi.com
FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCP16N60 / FCPF16N60 Rev. B
7
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
FCP16N60 / FCPF16N60 Rev. B
8
www.fairchildsemi.com
FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FCP16N60 / FCPF16N60 Rev. B
9
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Mechanical Dimensions (Continued)
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used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury of the user.
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device, or system whose failure to perform can be reasonably
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or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I24
10
FCP16N60 / FCPF16N60 Rev. B
www.fairchildsemi.com
FCP16N60 / FCPF16N60 600V N-Channel MOSFET
tm