SuperFETTM FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • Typ. Rds(on) = 0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested D G G DS TO-220 FCP Series TO-220F GD S FCPF Series S Absolute Maximum Ratings Symbol Parameter FCP16N60 FCPF16N60 600 Unit VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (Note 1) (TC = 25°C) - Derate above 25°C V 16 10.1 16* 10.1* A A 48 48* A ± 30 V 450 mJ 4.5 V/ns 167 1.33 37.9 0.3 W W/°C -55 to +150 °C 300 °C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP16N60 FCPF16N60 Unit RθJC Thermal Resistance, Junction-to-Case 0.75 3.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2007 Fairchild Semiconductor Corporation FCP16N60 / FCPF16N60 Rev. B 1 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET March 2007 Device Marking Device Package Reel Size Tape Width Quantity FCP16N60 FCP16N60 TO-220 - - 50 FCPF16N60 FCPF16N60 TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250μA, TJ = 150°C -- 650 -- V ID = 250μA, Referenced to 25°C -- 0.6 -- V/°C ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient BVDSS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 16A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.22 0.26 Ω -- 11.5 -- S -- 1730 2250 pF -- 960 1150 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 8A gFS Forward Transconductance VDS = 40V, ID = 8A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Crss Reverse Transfer Capacitance -- 85 -- pF Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 45 60 pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 110 -- pF VDD = 300V, ID = 16A RG = 25Ω -- 42 85 ns -- 130 270 ns -- 165 340 ns -- 90 190 ns -- 55 70 nC -- 10.5 13 nC -- 28 -- nC 16 A Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 16A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS =16A -- -- 1.4 V trr Reverse Recovery Time 435 -- ns Reverse Recovery Charge VGS = 0V, IS = 16A dIF/dt =100A/μs -- Qrr -- 7.0 -- μC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 16A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCP16N60 / FCPF16N60 Rev. B 2 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 2 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 1 10 o 150 C o 25 C o -55 C 0 10 *Note: 1. VDS = 40V *Notes : 1. 250μs Pulse Test ο 2. 250μs Pulse Test 2. TC = 25 C -1 0 10 2 1 10 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 0.5 VGS = 10V 0.4 0.3 VGS = 20V 0.2 0.1 1 10 o o 150 C 0 10 25 C *Notes : 1. VGS = 0V 2. 250 μs Pulse Test o *Note : TJ = 25 C 0.0 0 5 10 15 20 25 30 35 40 45 50 0.2 0.4 0.6 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Crss = Cgd 5000 Coss 4000 *Notes : 1. VGS = 0 V Ciss 2. f = 1 MHz 2000 1000 Crss 0 -1 10 0 10 1.4 1.6 10 VDS = 100V 10 VDS = 250V VDS = 480V 8 6 4 2 *Note : ID = 16A 0 1 0 10 20 30 40 50 60 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FCP16N60 / FCPF16N60 Rev. B 1.2 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd 6000 1.0 Figure 6. Gate Charge Characteristics 7000 3000 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 10 10 IDR , Reverse Drain Current [A] RDS(ON) [Ω], 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.6 Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 *Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 *Notes : 1. VGS = 10 V 0.5 2. ID = 8 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 o TJ, Junction Temperature [ C] ID, Drain Current [A] ID, Drain Current [A] 10 us 1 ms DC 0 10 *Notes : o 1. TC = 25 C -1 10 100 us 1 ms 1 10 10 ms 100 ms 0 10 DC *Notes : o 1. TC = 25 C -1 10 o 2. TJ = 150 C o 2. TJ = 150 C 3. Single Pulse 3. Single Pulse -2 -2 10 200 10 10 us 100 us 1 150 Operation in This Area is Limited by R DS(on) 2 10 100 Figure 9-2. Maximum Safe Operating Area for FCPF16N60 Operation in This Area is Limited by R DS(on) 2 50 o Figure 9-1. Maximum Safe Operating Area for FCP16N60 10 0 TJ, Junction Temperature [ C] 0 10 1 2 10 10 3 10 0 1 10 10 2 10 10 3 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 20 ID, Drain Current [A] 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature [°C] FCP16N60 / FCPF16N60 Rev. B 4 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FCP16N60 / FCPF16N60 600V N-Channel MOSFET Figure 11-1. Transient Thermal Response Curve (FCP16N60) ZθJC(t), Thermal Response 10 0 D = 0 .5 * N o te s : o 1 . Z θ JC (t) = 0 .7 5 C /W M a x. 0 .2 10 -1 2 . D u ty F a c to r, D = t 1 /t 2 0 .1 3 . T J M - T C = P D M * Z θ JC (t) PDM 0 .0 5 t1 0 .0 2 0 .0 1 10 t2 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] ZθJC(t), Thermal Response Figure 11-2. Transient Thermal Response Curve (FCPF16N60) 10 1 10 0 D = 0 .5 0 .2 0 .1 *N o te s : o 1 . Z θ J C (t) = 3 .3 C /W M a x . 0 .0 5 10 -1 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .0 2 PDM 0 .0 1 t1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FCP16N60 / FCPF16N60 Rev. B 5 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCP16N60 / FCPF16N60 Rev. B 6 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCP16N60 / FCPF16N60 Rev. B 7 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters FCP16N60 / FCPF16N60 Rev. B 8 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FCP16N60 / FCPF16N60 Rev. B 9 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Mechanical Dimensions (Continued) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I24 10 FCP16N60 / FCPF16N60 Rev. B www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET tm