QFET ® FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • Fast switching • 100% avalanche tested • Improved dv/dt capability D G TO-220 G DS FQP Series TO-220F GD S FQPF Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current FQP10N60C FQPF10N60C 600 Units V - Continuous (TC = 25°C) 9.5 9.5 * A - Continuous (TC = 100°C) 5.7 5.7 * A 38 * A IDM Drain Current - Pulsed VGSS Gate-Source Voltage (Note 1) 38 ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 700 mJ IAR Avalanche Current (Note 1) 9.5 A 15.6 mJ 4.5 V/ns EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 156 50 W 1.25 0.4 W/°C -55 to +150 °C 300 °C * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP10N60C FQPF10N60C Units 0.8 2.5 °C/W RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2007 Fairchild Semiconductor Corporation FQP10N60C / FQPF10N60C Rev. C 1 www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET April 2007 Device Marking Device Package Reel Size Tape Width Quantity FQP10N60C FQP10N60C TO-220 -- -- 50 FQPF10N60C FQPF10N60C TO-220F -- -- 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.75 A -- 0.6 0.73 Ω gFS Forward Transconductance VDS = 40 V, ID = 4.75 A -- 8.0 -- S (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1570 2040 pF -- 166 215 pF -- 18 24 pF -- 23 55 ns -- 69 150 ns -- 144 300 ns -- 77 165 ns -- 44 57 nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 9.5A, RG = 25 Ω (Note 4, 5) VDS = 480 V, ID = 9.5A, VGS = 10 V (Note 4, 5) -- 6.7 -- nC -- 18.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 38 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.5 A -- -- 1.4 V trr Reverse Recovery Time -- 420 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 9.5 A, dIF / dt = 100 A/µs -- 4.2 -- µC (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 14.2mH, IAS = 9.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 -1 0 0 10 2. 250µs Pulse Test -1 10 2 1 10 -55°C 25°C * Notes : 1. VDS = 40V * Notes : 1. 250µs Pulse Test 2. TC = 25°C 10 150°C 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 2.0 1.5 VGS = 10V 1.0 VGS = 20V 0.5 1 10 0 10 150°C * Notes : 1. VGS = 0V 25°C 2. 250µs Pulse Test * Note : TJ = 25°C 0.0 -1 0 5 10 15 20 25 30 10 35 0.2 0.4 ID, Drain Current [A] 0.6 0.8 Figure 5. Capacitance Characteristics Coss = Cds + Cgd Crss = Cgd VDS = 120V VGS, Gate-Source Voltage [V] 10 Ciss Capacitance [pF] 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) 2000 Coss 1500 1.2 Figure 6. Gate Charge Characteristics 3000 2500 1.0 VSD, Source-Drain voltage [V] * Notes ; 1. VGS = 0 V 1000 Crss 2. f = 1 MHz 500 VDS = 300V VDS = 480V 8 6 4 2 * Note : ID = 9.5A 0 -1 10 0 0 10 0 1 10 3 FQP10N60C / FQPF10N60C Rev. C 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250µA 0.8 -100 -50 0 50 100 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 4.75 A 150 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] Figure 9-1. Maximum Safe Operating Area for FQP10N60C Figure 9-2. Maximum Safe Operating Area for FQPF10N60C 2 10 Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) 2 10 10 µs 10 µs 10 100 µs ID, Drain Current [A] ID, Drain Current [A] 100 µs 1 1 ms 10 ms 100 ms DC 0 10 * Notes : 1. TC = 25°C 1 10 1 ms 10 ms 100 ms DC 0 10 -1 * Notes : 1. TC = 25°C 10 2. TJ = 150°C 2. TJ = 150°C 3. Single Pulse 3. Single Pulse -1 10 -2 0 1 10 2 10 10 3 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [°C] 4 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP10N60C 10 0 0 .2 10 -1 * N o te s : 1 . Z θ JC ( t) = 0 .8 ° C /W M a x . 0 .1 2 . D u ty F a c to r , D = t1/t2 3 . T JM - T C = P D M * Z θJC ( t) 0 .0 5 0 .0 2 PDM 0 .0 1 θJC (t), Thermal Response D = 0 .5 t1 Z s in g le p u ls e 10 -2 10 t2 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF10N60C D = 0 .5 0 0 .2 * N o te s : 1 . Z θJC ( t) = 2 .5 °C /W M a x . 0 .1 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z θJC ( t) 0 .0 5 10 -1 0 .0 2 0 .0 1 PDM Z θJC (t), Thermal Response 10 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 5 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 (45° 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters 8 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Mechanical Dimensions (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters 9 FQP10N60C / FQPF10N60C Rev. C www.fairchildsemi.com FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Mechanical Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ® ACEx Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I26 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com