TM UniFET FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description • 39A, 200V, RDS(on) = 0.066Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 38 nC) • Low Crss ( typical 57 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D G G DS TO-220F TO-220 GD S FDP Series FDPF Series S Absolute Maximum Ratings Symbol Parameter FDP39N20 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR FDPF39N20 200 V 39 23.4 (Note 1) Unit 39 * 23.4 * 156 156 * A A A ±30 V (Note 2) 860 mJ Avalanche Current (Note 1) 39 A EAR Repetitive Avalanche Energy (Note 1) 25.1 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (TC = 25°C) - Derate above 25°C 251 2.0 59 0.48 W W/°C -55 to +150 °C 300 °C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP39N20 FDPF39N20 Unit RθJC Thermal Resistance, Junction-to-Case 0.5 2.1 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 - °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2007 Fairchild Semiconductor Corporation FDP39N20 / FDPF39N20 Rev. A 1 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET March 2007 Device Marking Device Package Reel Size Tape Width Quantity FDP39N20 FDP39N20 TO-220 - - 50 FDPF39N20 FDPF39N20 TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 200 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.2 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V VDS = 160V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 19.5A -- 0.056 0.066 Ω gFS Forward Transconductance VDS = 40V, ID = 19.5A -- 28.5 -- S (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 1640 2130 pF -- 400 520 pF -- 57 85 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100V, ID = 39A RG = 25Ω (Note 4, 5) VDS = 160V, ID = 39A VGS = 10V (Note 4, 5) -- 30 70 ns -- 160 330 ns -- 150 310 ns -- 150 310 ns -- 38 49 nC -- 11 -- nC -- 16.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 39 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 156 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 39A -- -- 1.4 V trr Reverse Recovery Time 152 -- ns Reverse Recovery Charge VGS = 0V, IS = 39A dIF/dt =100A/µs -- Qrr -- 1.1 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.85mH, IAS = 39A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 39A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP39N20 / FDPF39N20 Rev. A 2 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 2 10 2 Top : 1 10 ID, Drain Current [A] ID, Drain Current [A] Figure 2. Transfer Characteristics 10 0 10 1 10 o 150 C o 25 C o -55 C ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ 0 -1 0 10 10 1 10 10 2 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.14 2 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 10 0.12 0.10 VGS = 10V 0.08 0.06 VGS = 20V 0.04 ※ Note : TJ = 25 1 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 0 0 25 50 75 100 10 125 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 4000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] Coss Ciss 2000 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz Crss VDS = 40V 10 VDS = 100V VDS = 160V 8 6 4 2 ※ Note : ID = 39A 0 -1 10 0 10 0 1 10 FDP39N20 / FDPF39N20 Rev. A 0 10 20 30 40 50 60 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µ A 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 19.5 A 0.5 0.0 -100 200 -50 0 50 100 o TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area - FDP39N20 ID, Drain Current [A] ID, Drain Current [A] 100 µs 1 ms 10 ms 100 ms DC Operation in This Area is Limited by R DS(on) 0 10 ※ Notes : -1 1 ms 10 ms 1 10 100 ms Operation in This Area is Limited by R DS(on) DC 0 10 ※ Notes : -1 o 1. TC = 25 C 10 o 1. TC = 25 C 10 10 µs 2 10 100 µs 1 o 2. TJ = 150 C 3. Single Pulse o 2. TJ = 150 C 3. Single Pulse -2 -2 10 200 Figure 9-2. Maximum Safe Operating Area - FDPF39N20 10 µs 2 10 10 150 o TJ, Junction Temperature [ C] 10 0 1 10 2 10 0 10 10 1 10 2 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Currentvs. Case Temperature 40 ID, Drain Current [A] 30 20 10 0 25 50 75 100 125 150 TC, Case Temperature [℃] FDP39N20 / FDPF39N20 Rev. A 4 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Typical Performance Characteristics (Continued) FDP39N20 / FDPF39N20 200V N-Channel MOSFET Typical Performance Characteristics (Continued) Zθ JC(t), Thermal Response Figure 11-1. Transient Thermal Response Curve - FDP39N20 D = 0 .5 10 0 .2 -1 ※ N o te s : 1 . Z θ J C( t) = 0 .5 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t) 0 .1 0 .0 5 PDM 0 .0 2 0 .0 1 10 t1 -2 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] Figure 11-2. Transient Thermal Response Curve - FDPF39N20 Zθ JC(t), Thermal Response 10 D = 0 .5 0 0 .2 0 .1 10 ※ N o te s : 1 . Z θ J C( t) = 2 .1 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t) 0 .0 5 -1 0 .0 2 PDM 0 .0 1 t1 10 -2 10 t2 s in g le p u ls e -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] FDP39N20 / FDPF39N20 Rev. A 5 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP39N20 / FDPF39N20 Rev. A 6 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP39N20 / FDPF39N20 Rev. A 7 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 FDP39N20 / FDPF39N20 Rev. A 8 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 FDP39N20 / FDPF39N20 Rev. A 2.76 ±0.20 4.70 ±0.20 0.35 ±0.10 9 www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 10 FDP39N20 / FDPF39N20 Rev. A www.fairchildsemi.com FDP39N20 / FDPF39N20 200V N-Channel MOSFET TRADEMARKS