FRFET TM FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description • 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • Fast switching • 100% avalanche tested • Improved dv/dt capability D G TO-220 G DS FQP Series TO-220F GD S FQPF Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current FQP10N60CF FQPF10N60CF Units 600 V - Continuous (TC = 25°C) 9.0 9.0 * A - Continuous (TC = 100°C) 5.7 5.7 * A 36 * A IDM Drain Current VGSS Gate-Source Voltage - Pulsed (Note 1) 36 ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 583 mJ IAR Avalanche Current (Note 1) 9.0 A EAR Repetitive Avalanche Energy (Note 1) 16.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 169 50 W 1.35 0.4 W/°C -55 to +150 °C °C 300 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP10N60CF FQPF10N60CF Units RθJC Thermal Resistance, Junction-to-Case 0.74 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2006 Fairchild Semiconductor Corporation FQP10N60CF / FQPF10N60CF Rev. A 1 www.fairchildsemi.com FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET February 2007 Device Marking Device Package Reel Size Tape Width Quantity FQP10N60CF FQP10N60CF TO-220 -- -- 50 FQPF10N60CF FQPF10N60CF TO-220F -- -- 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 -- -- V -- Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 µA VDS = 480 V, TC = 125°C -- -- 100 µA V/°C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.61 0.8 Ω -- 8.0 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5 A gFS Forward Transconductance VDS = 40 V, ID = 4.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1570 2040 pF -- 166 215 pF -- 18 24 pF -- 23 55 ns -- 69 150 ns -- 144 300 ns -- 77 165 ns -- 44 57 nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 9.0A, RG = 25 Ω (Note 4, 5) VDS = 480 V, ID = 9.0A, VGS = 10 V (Note 4, 5) -- 6.7 -- nC -- 18.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.0 A -- -- 1.4 V trr Reverse Recovery Time -- 90 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 9.0A, dIF / dt = 100 A/µs -- 0.3 -- µC (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13.2mH, IAS = 9.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2 FQP10N60CF / FQPF10N60CF Rev. A www.fairchildsemi.com FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 -1 0 0 10 2. 250µs Pulse Test -1 10 2 1 10 -55°C 25°C * Notes : 1. VDS = 40V * Notes : 1. 250µs Pulse Test 2. TC = 25°C 10 150°C 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 2.0 1.5 VGS = 10V 1.0 VGS = 20V 0.5 1 10 0 10 150°C * Notes : 1. VGS = 0V 25°C 2. 250µs Pulse Test * Note : TJ = 25°C 0.0 -1 0 5 10 15 20 25 30 10 35 0.2 0.4 ID, Drain Current [A] 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3000 Ciss = Cgs + Cgd (Cds = shorted) 12 Coss = Cds + Cgd Crss = Cgd 2500 VGS, Gate-Source Voltage [V] Capacitance [pF] 2000 Coss 1500 VDS = 120V 10 Ciss * Notes ; 1. VGS = 0 V 1000 Crss 2. f = 1 MHz 500 VDS = 300V VDS = 480V 8 6 4 2 * Note : ID = 9.0A 0 -1 10 0 0 10 1 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 FQP10N60CF / FQPF10N60CF Rev. A 10 www.fairchildsemi.com FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Typical Performance Characteristics FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250µA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 0.0 -100 200 * Notes : 1. VGS = 10 V 2. ID = 4.5 A 0.5 -50 0 50 100 150 Figure 9-1. Maximum Safe Operating Area for FQP10N60C Figure 9-2. Maximum Safe Operating Area for FQPF10N60C 2 2 10 10 10 µs 10 µs 100 µs 1 1 10 ID, Drain Current [A] ID, Drain Current [A] 100 µs 1ms 10ms 10 100ms DC 0 10 Operation in This Area is Limited by R DS(on) -1 10 * Notes : o 1. TC = 25 C 1ms 10ms 100ms 0 10 Operation in This Area is Limited by R DS(on) -1 10 o 2. TJ = 150 C 3. Single Pulse 2. TJ = 150 C 3. Single Pulse -2 10 DC * Notes : o 1. TC = 25 C o 10 200 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] -2 0 10 1 2 10 10 10 3 10 VDS, Drain-SourceVoltage[V] 0 10 1 2 10 10 3 VDS, Drain-SourceVoltage[V] Figure 10. Maximum Drain Current vs. Case Temperature 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 o TC, Case Temperature [ C] 4 FQP10N60CF / FQPF10N60CF Rev. A www.fairchildsemi.com FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP10N60CF 0 10 Z? JC(t), Thermal Response D=0.5 0.2 -1 10 0.1 PDM 0.05 t1 0.02 0.01 t2 * Notes : 0 1. Z? JC(t) = 0.74 C/W 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC(t) -2 10 single pulse -5 -4 10 10 -3 10 -2 10 -1 0 10 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for FQPF10N60CF D=0.5 0 Z? JC(t), Thermal Response 10 0.2 0.1 0.05 -1 PDM 10 0.02 t1 t2 0.01 * Notes : 0 1. Z? JC(t) = 2.5 C/W 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC(t) -2 10 single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] 5 FQP10N60CF / FQPF10N60CF Rev. A www.fairchildsemi.com FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 FQP10N60CF / FQPF10N60CF Rev. A www.fairchildsemi.com FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 FQP10N60CF / FQPF10N60CF Rev. A www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 (45° 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters 8 FQP10N60CF / FQPF10N60CF Rev. A www.fairchildsemi.com FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Mechanical Dimensions (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters 9 FQP10N60CF / FQPF10N60CF Rev. A www.fairchildsemi.com FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 10 FQP10N60CF / FQPF10N60CF Rev. A www.fairchildsemi.com FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET TRADEMARKS