FGA120N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential. • Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 25A • High Input Impedance C G TO-3P G C E E Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted Description FGA120N30D Units VCES Collector-Emitter Voltage 300 V VGES Gate-Emitter Voltage ± 30 V @ TC = 25°C 120 A @ TC = 25°C 300 A IC Collector Current ICM Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current PD (Note 1) @ TC = 100°C 10 A 40 A Maximum Power Dissipation @ TC = 25°C 290 W Maximum Power Dissipation @ TC = 100°C 116 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C Notes: (1) Repetitive test , pulse width = 100usec , Duty = 0.5 * Ic_pulse limited by max Tj Thermal Characteristics Typ. Max. Units RθJC(IGBT) Symbol Thermal Resistance, Junction-to-Case for IGBT Parameter -- 0.43 °C/W RθJC(DIODE) Thermal Resistance, Junction-to-Case for Diode -- 1.56 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ©2006 Fairchild Semiconductor Corporation FGA120N30D Rev. A 1 www.fairchildsemi.com FGA120N30D 300V PDP IGBT June 2006 Device Marking Device Package Reel Size Tape Width Quantity FGA120N30D FGA120N30D TO-3P -- -- 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250µA 300 -- -- V ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA -- 0.6 -- V/°C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 100 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 250 nA 2.5 4.0 5.0 V IC = 25A, VGE = 15V -- 1.1 1.4 V IC = 120A, VGE = 15V -- 1.9 -- V IC = 120A, VGE = 15V, TC = 125°C -- 2.0 -- V -- 2310 - pF VCE = 30V, VGE = 0V, f = 1MHz -- 360 - pF -- 100 - pF On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time -- 30 -- ns tr Rise Time -- 270 -- ns td(off) Turn-Off Delay Time -- 100 -- ns tf Fall Time -- 130 300 ns Eon Turn-On Switching Loss -- 0.17 -- mJ Eoff Turn-Off Switching Loss -- 0.56 -- mJ Ets Total Switching Loss -- 0.73 -- mJ td(on) Turn-On Delay Time -- 30 -- ns tr Rise Time -- 280 -- ns td(off) Turn-Off Delay Time -- 105 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss -- 0.9 -- mJ Ets Total Switching Loss -- 1.08 -- mJ Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCC = 200V, IC = 25A, RG = 8.7Ω, VGE = 15V, Resistive Load, TC = 25°C VCC = 200V, IC = 25A, RG = 8.7Ω, VGE = 15V, Resistive Load, TC = 125°C VCE = 200V, IC = 25A, VGE = 15V 2 FGA120N30D Rev. A -- 180 -- ns -- 0.18 -- mJ -- 120 180 nC -- 15 22 nC -- 60 90 nC www.fairchildsemi.com FGA120N30D 300V PDP IGBT Package Marking and Ordering Information C Symbol = 25°C unless otherwise noted Parameter Test Conditions VFM Diode Forward Voltage IF = 10A trr Diode Reverse Recovery Time IF = 10A dI/dt = 200A/µs Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge 3 FGA120N30D Rev. A Min. Typ. Max. Units TC = 25°C -- 1.1 1.4 V TC = 125°C -- 0.9 -- TC = 25°C -- 21 -- TC = 125°C -- 35 -- TC = 25°C -- 2.8 -- TC = 125°C -- 5.6 -- TC = 25°C -- 29.4 -- TC = 125°C -- 98 -- ns A nC www.fairchildsemi.com FGA120N30D 300V PDP IGBT Electrical Characteristics of DIODE T Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 180 180 o o T C = 125 C T C = 25 C 20V 15V 120 10V 12V 90 60 V G E =8V 15V 120 10V 90 V G E =8V 60 30 30 0 0 0 2 4 0 6 2 Collector-Em itter Voltage, V CE [V] 4 6 C ollector-E m itter V oltage, V C E [V ] Figure3. Typical Saturation Voltage Characteristics Figure 4. Transfer characteristics 150 200 C o m m o n E m itte r V GE = 15V TC = 120 C o m m o n E m itte r V CE = 2 0V 100 o 25 C TC = Ic , Collector Current [A] Collector Current, IC [A] 12V 20V 150 Collector Current, IC [A] Collector Current, IC [A] 150 o TC = 125 C 90 60 o 25 C o T C = 125 C 10 30 1 0 0 .0 0 .5 1 .0 1 .5 2 .0 2 .5 0 3 .0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4 6 8 10 Figure 6. Saturation Voltage vs. VGE 6 2 .4 C o m m o n E m it t e r o TC = 25 C [V] C o m m o n E m itte r V GE = 15V 12 0 A 5 CE 2 .0 Collector - Emitter Voltage, V Collector-Emitter Voltage, VCE [V] 2 V C E , G a te T o E m itte r V o lta g e [V ] C o llecto r-E m itte r V o lta g e , V C E [V ] 1 .6 50A 1 .2 25A I C = 1 2.5 A 0 .8 4 3 120A 2 50A 25A 1 1 2 .5 A 0 0 .4 25 50 75 100 4 125 C ase Te m pera ture , T C [ C ] 4 FGA120N30D Rev. A 8 12 16 20 G a t e - E m it t e r V o lt a g e , V G E [ V ] o www.fairchildsemi.com FGA120N30D 300V PDP IGBT Typical Performance Characteristics (Continued) Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Charaacteristics 6 5000 o T C = 25 C 4000 Capacitance [pF] Collector - Emitter Voltage, V 4 3 120A 2 50A C oes 3000 C res 2000 25A 1000 1 1 2 .5 A 0 0 4 8 12 16 20 0.1 Figure 9. Gate Charge Characteristics 1000 Ic M A X (P ulsed) 50 µ s o T C = 25 C Ic M A X (C ontinuous) 10 Collector Current, Ic [A] 12 30 10 Figure 10. SOA Characteristics C om m on E m itter RL = 8Ω 14 1 C ollector-Em itter V oltage, V C E [V ] G a t e - E m it te r V o lta g e , V G E [V ] Gate-Emitter Voltage, VGE [V] C om m on E m itter V G E = 0V , f = 1M H z C ies 5 CE [V] C o m m o n E m itte r o TC = 125 C V cc = 200V 8 6 4 100 µ s 100 1m s D C O peration 10 S ingle N onrepetitive o P ulse Tc = 25 C C urves m ust be derated linearly w ith increase in tem perature 1 2 0.1 0 0 30 60 90 120 0.1 150 G a te C h a rg e, Q g [n C ] 1 10 100 1000 C ollector - E m itter V o ltage, V C E [V ] Figure 11. Turn-On Characteristics vs. Gate Resistance Figure 12. Turn-Off Characteristics vs. Gate Resistance 1000 10 00 td (off) Switching Time [ns] Switching Time [ns] tr 100 td(on) C om m on Em itter V C C = 200V, V G E = 15V tf 1 00 C o m m o n E m itte r V C C = 2 00 V , V G E = 15 V I C = 25A I C = 25A o T C = 25 C o T C = 25 C o T C = 125 C o T C = 12 5 C 10 10 0 10 20 30 40 0 50 20 30 40 50 G a te R e sista nce, R G [ Ω ] Gate R esistance, R G [Ω ] 5 FGA120N30D Rev. A 10 www.fairchildsemi.com FGA120N30D 300V PDP IGBT Typical Performance Characteristics (Continued) Figure 13. Turn-On Characteristics vs. Collector Current Figure 14.Turn-Off Characteristics vs. Collector Current 1000 C om m on E m itter V CC = 200V, V GE = 15V R G = 8.7 Ω 1000 o T C = 25 C Switching Time [ns] Switching Time [ns] tr o T C = 125 C 100 td(on) tf 100 td(off) C om m on Em itter V C C = 200V,V G E = 15V R G =8.7 Ω o T C = 25 C o T C = 125 C 10 10 0 20 40 60 80 100 0 120 20 Figure 15. Switching Loss vs. Gate Resistance 60 80 100 120 Figure 16. Switching Loss vs. Collector Current C om m on E m itter V C C = 200V , V G E = 15V I D = 25A C om m on E m itter V C C = 200V ,V G E = 15V RG = 5Ω 10 o E off o T C = 25 C T C = 25 C o T C = 125 C o E off Switching Loss [mJ] Switching Loss [mJ] 40 C ollector C urrent, I C [A ] C ollector C urrent, I C [A ] 1 E on 0.1 T C = 125 C E on 1 0.1 0 10 20 30 40 50 0 G a te R e sista n ce , R G [ Ω ] 20 40 60 80 100 120 C o lle cto r C urre n t, I C [A ] Figure 17. Turn-Off SOA Figure 1000 Collector Current, IC [A] Safe O perating Area o V GE = 20V, T C = 100 C 100 10 1 10 100 1000 Collector-Emitter Voltage, V C E [V] 6 FGA120N30D Rev. A www.fairchildsemi.com FGA120N30D 300V PDP IGBT Typical Performance Characteristics FGA120N30D 300V PDP IGBT Typical Performance Characteristics (Continued) Figure 18. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 Pdm 0.01 0.02 t1 0.01 t2 single pulse 1E-3 1E-5 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] Figure 19. Forward Characteristics Figure 20. Typical Reverse Recovery Current 5 100 I F = 10A o 10 Reverse Recovery Current , Irr [A] Forward Current , IF [A] T J = 125 C o T J = 25 C 1 o T C = 25 C o T C = 125 C 0.1 0.0 0.5 1.0 1.5 2.0 o T C = 25 C 4 3 2 1 0 100 2.5 Forw ard Voltage , V F [V] 500 di/dt [A/ µ s] Figure 21. Typical Reverse Recovery Time 36 Reverse Recovery Time , trr [ns] IF = 10A o Tc = 25 C 32 28 24 100 500 di/dt [A/µ s] 7 FGA120N30D Rev. A www.fairchildsemi.com TO-3P 15.60 ±0.20 3.80 ±0.20 +0.15 3.50 ±0.20 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 1.50 –0.05 16.50 ±0.30 9.60 ±0.20 19.90 ±0.20 13.90 ±0.20 ø3.20 ±0.10 4.80 ±0.20 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 8 FGA120N30D Rev. A 0.60 –0.05 www.fairchildsemi.com FGA120N30D 300V PDP IGBT Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ 2 E CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 9 FGA120N30D Rev. A www.fairchildsemi.com FGA120N30D 300V PDP IGBT TRADEMARKS