tm FGL40N120AND 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • CO-PAK, IGBT with FRD : trr = 75ns (typ.) Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G TO-264 G C E E Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage IC Collector Current @TC = 25°C Collector Current @TC = 100°C ICM(1) Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current PD @TC = 100°C FGL40N120AND Units 1200 V ±25 V 64 A 40 A 160 A 40 A 240 A Maximum Power Dissipation @TC = 25°C 500 W Maximum Power Dissipation @TC = 100°C 200 W 10 µs SCWT Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125°C TJ Operating Junction Temperature -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 seconds 300 °C Notes: (1) Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.25 °C/W RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 0.7 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W ©2008 Fairchild Semiconductor Corporation FGL40N120AND Rev. A2 1 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT February 2008 Device Marking Device Package Reel Size Tape Width Quantity FGL40N120AND FGL40N120AND TO-264 - - 25 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±250 nA IC = 250µA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 5.5 7.5 V IC = 40A, VGE = 15V -- 2.6 3.2 V IC = 40A, VGE = 15V, TC = 125°C -- 2.9 -- V IC = 64A, VGE = 15V -- 3.15 -- V -- 3200 -- pF -- 370 -- pF -- 125 -- pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz Switching Characteristics td(on) Turn-On Delay Time -- 15 -- ns tr Rise Time -- 20 -- ns td(off) Turn-Off Delay Time -- 110 -- ns tf Fall Time -- 40 80 ns Eon Turn-On Switching Loss -- 2.3 3.45 mJ Eoff Turn-Off Switching Loss -- 1.1 1.65 mJ Ets Total Switching Loss -- 3.4 5.1 mJ td(on) Turn-On Delay Time -- 20 -- ns tr Rise Time -- 25 -- ns td(off) Turn-Off Delay Time -- 120 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss -- 1.8 -- mJ Ets Total Switching Loss -- 4.3 -- mJ Qg Total Gate charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCC = 600V, IC = 40A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 600V, IC = 40A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 600V, IC = 40A, VGE = 15V 2 FGL40N120AND Rev. A2 -- 45 -- ns -- 2.5 -- mJ -- 220 330 nC -- 25 38 nC -- 130 195 nC www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Package Marking and Ordering Information C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge = 25°C unless otherwise noted Test Conditions IF = 40A IF = 40A, di/dt = 200A/µs 3 FGL40N120AND Rev. A2 Min. Typ. Max. TC = 25°C -- 3.2 4.0 TC = 125°C -- 2.7 -- TC = 25°C -- 75 112 TC = 125°C -- 130 -- TC = 25°C -- 8 12 TC = 125°C -- 13 -- TC = 25°C -- 300 450 TC = 125°C -- 845 -- Units V nS A nC www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Electrical Characteristics of DIODE T FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 300 150 TC = 25°C Common Emitter VGE = 15V 20V 17V 15V 250 TC = 25°C 120 200 Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Saturation Voltage Characteristics 12V 150 VGE = 10V 100 50 0 TC = 125°C 90 60 30 0 0 2 4 6 8 10 0 Collector-Emitter Voltage, VCE [V] 80 Common Emitter VGE = 15V VCC = 600V Load Current : peak of square wave 70 60 4 80A Load Current [A] Collector-Emitter Voltage, VCE [V] 6 Figure 4. Load Current vs. Frequency 3 40A 2 50 40 30 20 IC = 20A Duty cycle : 50% TC = 100°C 10 Power Dissipation = 100W 0 1 25 50 75 100 0.1 125 1 Case Temperature, TC [°C] 20 100 1000 Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25°C 16 12 8 80A 4 10 Frequency [kHz] Figure 5. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] 4 Collector-Emitter Voltage, VCE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 5 2 40A IC = 20A 0 Common Emitter TC = 125°C 16 12 8 80A 4 40A IC = 20A 0 0 4 8 12 16 20 0 Gate-Emitter Voltage, VGE [V] 8 12 16 20 Gate-Emitter Voltage, VGE [V] 4 FGL40N120AND Rev. A2 4 www.fairchildsemi.com (Continued) Figure 7. Capacitance Characteristics 6000 Figure 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VGE = 0V, f = 1MHz TC = 25°C 5000 100 Switching Time [ns] Capacitance [pF] Ciss 4000 3000 2000 Coss 1000 tr Common Emitter VCC = 600V, VGE = ±15V td(on) IC = 40A Crss TC = 25°C TC = 125°C 10 0 1 0 10 10 20 Figure 9. Turn-Off Characteristics vs. Gate Resistance 50 60 70 Common Emitter VCC = 600V, VGE = ±15V TC = 25°C IC = 40A td(off) TC = 125°C TC = 25°C 10 TC = 125°C Switching Loss [mJ] Switching Time [ns] 40 Figure 10. Switching Loss vs. Gate Resistance Common Emitter VCC = 600V, VGE = ±15V, IC = 40A 1000 30 Gate Resistance, RG [Ω ] Collector-Emitter Voltage, VCE [V] 100 tf Eon Eoff 1 10 0 10 20 30 40 50 60 70 0 10 20 Gate Resistance, RG [Ω] Figure 11. Turn-On Characteristics vs. Collector Current 40 50 60 70 Figure 12. Turn-Off Characteristics vs. Collector Current Common Emitter VGE = ±15V, RG = 5Ω Common Emitter VGE = ±15V, RG = 5Ω 100 30 Gate Resistance, RG [Ω] TC = 25°C TC = 25°C tr TC = 125°C Switching Time [ns] Switching Time [ns] TC = 125°C td(on) td(off) 100 tf 10 20 30 40 50 60 70 20 80 40 50 60 70 80 Collector Current, IC [A] Collector Current, IC [A] 5 FGL40N120AND Rev. A2 30 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics 16 Common Emitter VGE = ±15V, RG = 5Ω TC = 25°C Switching Loss [mJ] Eoff 1 0.1 600V 12 10 400V 8 6 4 2 0 20 30 40 50 60 70 80 0 50 Collector Current, IC [A] 100µs Collector Current, IC [A] DC Operation 1 Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.01 10 Safe Operating Area o VGE = 15V, TC = 125 C 1 1 250 100 1ms 10 0.1 200 50µs Ic MAX (Continuous) 0.1 150 Figure 16. Turn-Off SOA Ic MAX (Pulsed) 100 100 Gate Charge, Qg [nC] Figure 15. SOA Characteristics Collector Current, Ic [A] Vcc = 200V TC = 25°C Eon TC = 125°C Gate-Emitter Voltage, VGE [V] 10 Common Emitter RL = 15Ω 14 10 100 1000 1 10 Collector - Emitter Voltage, VCE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current 10 Reverse Recovery Currnet , Irr [A] 100 o Forward Current , IF [A] TJ = 125 C 10 o TJ = 25 C 1 o TC = 125 C di/dt = 200A/µs 8 6 4 di/dt = 100A/µs 2 o TC = 25 C 0.1 0 1 2 3 4 5 0 0 6 Forward Voltage , VF [V] 20 30 40 50 60 70 Forward Current , IF [A] 6 FGL40N120AND Rev. A2 10 www.fairchildsemi.com (Continued) Figure 19. Stored Charge Figure 20. Reverse Recovery Time 400 Stored Recovery Charge , Qrr [nC] 100 Reverse Recovery Time , trr [ns] FGL40N120AND 1200V NPT IGBT Typical Performance Characteristics 90 di/dt = 200A/µs 80 di/dt = 100A/µs 70 60 di/dt = 200A/µs 300 200 di/dt = 100A/µs 100 50 0 10 20 30 40 50 60 70 0 0 Forward Current , IF [A] 10 20 30 40 50 60 70 Forward Current , IF [A] Figure 21. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.1 0.5 0.2 0.1 0.01 0.05 Pdm Pdm t1 t1 0.02 0.01 1E-3 1E-5 t2 t2 single pulse 1E-4 Duty Dutyfactor factorDD==t1 t1//t2 t2 Peak PeakTj Tj==Pdm Pdm××Zthjc Zthjc++TTCC 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] 7 FGL40N120AND Rev. A2 www.fairchildsemi.com FGL40N120AND 1200V NPT IGBT Mechanical Dimensions (8.30) (1.00) (2.00) 20.00 ±0.20 1.50 ±0.20 (7.00) .20 ) (7.00) 2.50 ±0.10 4.90 ±0.20 (1.50) (1.50) 2.50 ±0.20 3.00 ±0.20 (1.50) 20.00 ±0.50 0) .00 (2.00) (11.00) 2.0 (R (R1 (0.50) 0 ±0 ø3.3 (9.00) (9.00) (8.30) (4.00) 20.00 ±0.20 6.00 ±0.20 TO-264 +0.25 1.00 –0.10 +0.25 0.60 –0.10 2.80 ±0.30 (2.80) 5.45TYP [5.45 ±0.30] (0.15) (1.50) 3.50 ±0.20 5.00 ±0.20 5.45TYP [5.45 ±0.30] Dimensions in Millimeters 8 FGL40N120AND Rev. 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