FGH80N60FD2 tm 600V, 80A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.8V @ IC = 40A • High input impedance • Fast switching • RoHS compliant Applications • Induction Heating Application E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25°C Collector Current @ TC = 100°C Pulsed Collector Current @ TC = 25°C Ratings Units 600 V ± 20 V 80 A 40 A 160 A Maximum Power Dissipation @ TC = 25°C 290 W Maximum Power Dissipation @ TC = 100°C 116 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter RθJC(IGBT) Thermal Resistance, Junction-to-Case RθJC(Diode) Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient ©2008 Fairchild Semiconductor Corporation FGH80N60FD2 Rev. A1 Typ. Max. Units -- 0.43 °C/W -- 1 1.45 °C/W 40 °C/W www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT April 2008 Device Marking Device Package Packaging Type FGH80N60FD2 FGH80N60FD2TU TO-247 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V -- 0.6 -- V/°C Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250uA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±400 nA IC = 250uA, VCE = VGE 4.5 5.5 7.0 V IC = 40A, VGE = 15V -- 1.8 2.4 V IC = 40A, VGE = 15V, TC = 125°C -- 2.05 -- V -- 2110 -- pF -- 200 -- pF -- 60 -- pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time -- 21 -- ns tr Rise Time -- 56 -- ns td(off) Turn-Off Delay Time -- 126 -- ns tf Fall Time -- 50 100 ns Eon Turn-On Switching Loss -- 1 1.5 mJ Eoff Turn-Off Switching Loss -- 0.52 0.78 mJ Ets Total Switching Loss -- 1.52 2.28 mJ td(on) Turn-On Delay Time -- 20 -- ns VCC = 400 V, IC = 40A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C tr Rise Time -- 54 -- ns td(off) Turn-Off Delay Time -- 131 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss -- 0.78 -- mJ Ets Total Switching Loss -- 1.88 -- mJ Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCC = 400 V, IC = 40A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 400 V, IC = 40A, VGE = 15V 2 FGH80N60FD2 Rev. A1 -- 70 -- ns -- 1.1 -- mJ -- 120 -- nC -- 14 -- nC -- 58 -- nC www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25°C unless otherwise noted Test Conditions IF = 15A IES =15A, dIES/dt = 200A/µs Irr Diode Reverse Recovery Current Qrr Diode Reverse Recovery Charge 3 FGH80N60FD2 Rev. A1 Min. Typ. Max TC = 25°C - 1.2 1.5 TC = 125°C - 1.0 - TC = 25°C - 61 - TC = 125°C - 125 - TC = 25°C - 4.8 - TC = 125°C - 8.4 - TC = 25°C - 146 - TC = 125°C - 525 - Units V ns ns nC www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 160 Figure 2. Typical Saturation Voltage Characteristics 160 o o 15V TC = 25 C TC = 125 C 12V 120 10V 80 40 0 VGE = 8V 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 12V 120 10V 80 40 VGE = 8V 0 10 Figure 3. Typical Saturation Voltage Characteritics 0 10 160 Common Emitter VCE = 20V Common Emitter VGE = 15V o TC = 25 C o TC = 25 C 120 120 Collector Current, IC [A] Collector Current, IC [A] 2 4 6 8 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 160 o TC = 125 C 80 40 o TC = 125 C 80 40 0 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 2 6 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.5 3.0 20 80A 2.5 40A 2.0 20A 1.5 Common Emitter VGE = 15V 50 75 100 Common Emitter o 16 12 8 40A 4 80A IC = 20A 125 o Case Temperature, TC [ C] 4 FGH80N60FD2 Rev. A1 12 TC = 25 C 0 1.0 25 4 6 8 10 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. Vge Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 15V 20V Collector Current, IC [A] Collector Current, IC [A] 20V 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT Typical Performance Characteristics (Continued) Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance Characteristics 5000 20 Common Emitter Common Emitter VGE = 0V, f = 1MHz 4000 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 125 C 12 8 o TC = 25 C Ciss 3000 Coss 2000 40A 4 1000 80A Crss IC = 20A 0 0.1 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Gate Charge Characteristics 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteeristics 400 15 Common Emitter 10µs 100 Vcc = 100V Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o TC = 25 C 12 200V 300V 9 6 3 100µs 10 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 0.01 0 0 50 100 Gate Charge, Qg [nC] 1 150 Figure 11. Turn-Off Switching SOA Characteristics 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-On Characteristics vs. Gate Resistance 200 200 100 Switching Time [ns] Collector Current, IC [A] 100 10 tr Common Emitter VCC = 400V, VGE = 15V IC = 40A td(on) 10 o TC = 25 C Safe Operating Area o o TC = 125 C VGE = 20V, TC = 100 C 1 1 10 5 100 0 1000 5 FGH80N60FD2 Rev. A1 10 20 30 40 50 Gate Resistance, RG [Ω] Collector-Emitter Voltage, VCE [V] www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT Typical Performance Characteristics (Continued) Figure 13. Turn-Off Characteristics vs. Gate Resistance Figure 14. Turn-On Characteristics vs. Collector Current 200 2000 Common Emitter VCC = 400V, VGE = 15V IC = 40A 1000 o 100 o o TC = 125 C td(off) 100 tf 20 30 40 td(on) 50 40 60 80 Collector Current, IC [A] Gate Resistance, RG [Ω] Figure 15. Turn-Off Characteristics vs. Collector Current Figure 16. Switching Loss vs Gate Resistance 5 500 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VCC = 400V, VGE = 15V o TC = 25 C IC = 40A o o TC = 125 C Switching Loss [mJ] Switching Time [ns] tr o 10 20 10 10 TC = 25 C TC = 125 C Switching Time [ns] Switching Time [ns] TC = 25 C 0 Common Emitter VGE = 15V, RG = 10Ω td(off) 100 tf 20 20 40 60 TC = 25 C o TC = 125 C Collector Current, IC [A] Eoff 1 0.3 0 80 Eon 10 20 30 40 Gate Resistance, RG [Ω] 50 Figure 17. Switching Loss vs Collector Current 10 Common Emitter VGE = 15V, RG = 10Ω Eon o Switching Loss [mJ] TC = 25 C o TC = 125 C Eoff 1 0.1 20 40 60 80 Collector Current, IC [A] 6 FGH80N60FD2 Rev. A1 www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT Typical Performance Characteristics FGH80N60FD2 600V, 80A Field Stop IGBT Typical Performance Characteristics (Continued) Figure 18. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.01 0.05 0.02 0.01 0.1 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] Figure 19. Typical Forward Voltage Drop Figure 20. Stored Charge 10 Stored Recovery Charge , Qrr [nC] Forward Current , IF [A] 1000 o TC = 125 C o TC = 25 C 1 800 o 125 C 600 400 0 100 0.1 0 1 2 Forward Voltage , VF [V] 3 Reverse Recovery Current, Irr [A] Reverse Recovery Time, trr [ns] 300 400 20 140 120 o 125 C 100 80 60 o 25 C 200 300 15 o 10 125 C 5 o 25 C 0 5 100 400 200 300 400 di/dt, [A/µ s] di/dt, [A/µs] 7 FGH80N60FD2 Rev. A1 200 Figure 22. Reverse Recovery Current 160 20 5 100 25 C di/dt ,[A/µs] Figure 21. Reverse Recovery Time 40 o 200 www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT Mechanical Dimensions TO-247AB (FKS PKG CODE 001) 8 FGH80N60FD2 Rev. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I28 9 FGH80N60FD2 Rev. A1 www.fairchildsemi.com FGH80N60FD2 600V, 80A Field Stop IGBT tm