FAIRCHILD FGH80N60FD2

FGH80N60FD2
tm
600V, 80A Field Stop IGBT
Features
General Description
• High current capability
Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
Induction Heating applications where low conduction and
switching losses are essential.
• Low saturation voltage: VCE(sat) =1.8V @ IC = 40A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating Application
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
IC
ICM (1)
PD
Collector Current
@ TC = 25°C
Collector Current
@ TC = 100°C
Pulsed Collector Current
@ TC = 25°C
Ratings
Units
600
V
± 20
V
80
A
40
A
160
A
Maximum Power Dissipation
@ TC = 25°C
290
W
Maximum Power Dissipation
@ TC = 100°C
116
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
Thermal Resistance, Junction-to-Case
RθJC(Diode)
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
©2008 Fairchild Semiconductor Corporation
FGH80N60FD2 Rev. A1
Typ.
Max.
Units
--
0.43
°C/W
--
1
1.45
°C/W
40
°C/W
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FGH80N60FD2 600V, 80A Field Stop IGBT
April 2008
Device Marking
Device
Package
Packaging
Type
FGH80N60FD2
FGH80N60FD2TU
TO-247
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
--
0.6
--
V/°C
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250uA
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
±400
nA
IC = 250uA, VCE = VGE
4.5
5.5
7.0
V
IC = 40A, VGE = 15V
--
1.8
2.4
V
IC = 40A, VGE = 15V,
TC = 125°C
--
2.05
--
V
--
2110
--
pF
--
200
--
pF
--
60
--
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
--
21
--
ns
tr
Rise Time
--
56
--
ns
td(off)
Turn-Off Delay Time
--
126
--
ns
tf
Fall Time
--
50
100
ns
Eon
Turn-On Switching Loss
--
1
1.5
mJ
Eoff
Turn-Off Switching Loss
--
0.52
0.78
mJ
Ets
Total Switching Loss
--
1.52
2.28
mJ
td(on)
Turn-On Delay Time
--
20
--
ns
VCC = 400 V, IC = 40A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
tr
Rise Time
--
54
--
ns
td(off)
Turn-Off Delay Time
--
131
--
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
--
0.78
--
mJ
Ets
Total Switching Loss
--
1.88
--
mJ
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC = 400 V, IC = 40A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 400 V, IC = 40A,
VGE = 15V
2
FGH80N60FD2 Rev. A1
--
70
--
ns
--
1.1
--
mJ
--
120
--
nC
--
14
--
nC
--
58
--
nC
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FGH80N60FD2 600V, 80A Field Stop IGBT
Package Marking and Ordering Information
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
TC = 25°C unless otherwise noted
Test Conditions
IF = 15A
IES =15A, dIES/dt = 200A/µs
Irr
Diode Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
3
FGH80N60FD2 Rev. A1
Min.
Typ.
Max
TC = 25°C
-
1.2
1.5
TC = 125°C
-
1.0
-
TC = 25°C
-
61
-
TC = 125°C
-
125
-
TC = 25°C
-
4.8
-
TC = 125°C
-
8.4
-
TC = 25°C
-
146
-
TC = 125°C
-
525
-
Units
V
ns
ns
nC
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FGH80N60FD2 600V, 80A Field Stop IGBT
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics
160
Figure 2. Typical Saturation Voltage
Characteristics
160
o
o
15V
TC = 25 C
TC = 125 C
12V
120
10V
80
40
0
VGE = 8V
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
12V
120
10V
80
40
VGE = 8V
0
10
Figure 3. Typical Saturation Voltage
Characteritics
0
10
160
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
TC = 25 C
o
TC = 25 C
120
120
Collector Current, IC [A]
Collector Current, IC [A]
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
160
o
TC = 125 C
80
40
o
TC = 125 C
80
40
0
0
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
2
6
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.5
3.0
20
80A
2.5
40A
2.0
20A
1.5
Common Emitter
VGE = 15V
50
75
100
Common Emitter
o
16
12
8
40A
4
80A
IC = 20A
125
o
Case Temperature, TC [ C]
4
FGH80N60FD2 Rev. A1
12
TC = 25 C
0
1.0
25
4
6
8
10
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. Vge
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
15V
20V
Collector Current, IC [A]
Collector Current, IC [A]
20V
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGH80N60FD2 600V, 80A Field Stop IGBT
Typical Performance Characteristics
(Continued)
Figure 7. Saturation Voltage vs. Vge
Figure 8. Capacitance Characteristics
5000
20
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
4000
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
TC = 125 C
12
8
o
TC = 25 C
Ciss
3000
Coss
2000
40A
4
1000
80A
Crss
IC = 20A
0
0.1
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 9. Gate Charge Characteristics
1
10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteeristics
400
15
Common Emitter
10µs
100
Vcc = 100V
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
TC = 25 C
12
200V
300V
9
6
3
100µs
10
1ms
10 ms
1
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
0.01
0
0
50
100
Gate Charge, Qg [nC]
1
150
Figure 11. Turn-Off Switching SOA
Characteristics
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-On Characteristics vs.
Gate Resistance
200
200
100
Switching Time [ns]
Collector Current, IC [A]
100
10
tr
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
td(on)
10
o
TC = 25 C
Safe Operating Area
o
o
TC = 125 C
VGE = 20V, TC = 100 C
1
1
10
5
100
0
1000
5
FGH80N60FD2 Rev. A1
10
20
30
40
50
Gate Resistance, RG [Ω]
Collector-Emitter Voltage, VCE [V]
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FGH80N60FD2 600V, 80A Field Stop IGBT
Typical Performance Characteristics
(Continued)
Figure 13. Turn-Off Characteristics vs.
Gate Resistance
Figure 14. Turn-On Characteristics vs.
Collector Current
200
2000 Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
1000
o
100
o
o
TC = 125 C
td(off)
100
tf
20
30
40
td(on)
50
40
60
80
Collector Current, IC [A]
Gate Resistance, RG [Ω]
Figure 15. Turn-Off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs Gate Resistance
5
500
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VCC = 400V, VGE = 15V
o
TC = 25 C
IC = 40A
o
o
TC = 125 C
Switching Loss [mJ]
Switching Time [ns]
tr
o
10
20
10
10
TC = 25 C
TC = 125 C
Switching Time [ns]
Switching Time [ns]
TC = 25 C
0
Common Emitter
VGE = 15V, RG = 10Ω
td(off)
100
tf
20
20
40
60
TC = 25 C
o
TC = 125 C
Collector Current, IC [A]
Eoff
1
0.3
0
80
Eon
10
20
30
40
Gate Resistance, RG [Ω]
50
Figure 17. Switching Loss vs Collector Current
10
Common Emitter
VGE = 15V, RG = 10Ω
Eon
o
Switching Loss [mJ]
TC = 25 C
o
TC = 125 C
Eoff
1
0.1
20
40
60
80
Collector Current, IC [A]
6
FGH80N60FD2 Rev. A1
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FGH80N60FD2 600V, 80A Field Stop IGBT
Typical Performance Characteristics
FGH80N60FD2 600V, 80A Field Stop IGBT
Typical Performance Characteristics
(Continued)
Figure 18. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.01
0.05
0.02
0.01
0.1
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
Figure 19. Typical Forward Voltage Drop
Figure 20. Stored Charge
10
Stored Recovery Charge , Qrr [nC]
Forward Current , IF [A]
1000
o
TC = 125 C
o
TC = 25 C
1
800
o
125 C
600
400
0
100
0.1
0
1
2
Forward Voltage , VF [V]
3
Reverse Recovery Current, Irr [A]
Reverse Recovery Time, trr [ns]
300
400
20
140
120
o
125 C
100
80
60
o
25 C
200
300
15
o
10
125 C
5
o
25 C
0
5
100
400
200
300
400
di/dt, [A/µ s]
di/dt, [A/µs]
7
FGH80N60FD2 Rev. A1
200
Figure 22. Reverse Recovery Current
160
20
5
100
25 C
di/dt ,[A/µs]
Figure 21. Reverse Recovery Time
40
o
200
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FGH80N60FD2 600V, 80A Field Stop IGBT
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
8
FGH80N60FD2 Rev. A1
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As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b) support
or sustain life, and (c) whose failure to perform when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I28
9
FGH80N60FD2 Rev. A1
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FGH80N60FD2 600V, 80A Field Stop IGBT
tm