FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Features Applications • High speed switching Motor controls and general purpose inverters. • Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A Description • High input impedance Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature. • CO-PAK, IGBT with FRD : trr = 50 ns (typ.) • Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V C G TO-220 1 1.Gate 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol Description VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage IC Collector Current @ TC = 25°C Collector Current @ TC = 100°C ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current PD Maximum Power Dissipation Maximum Power Dissipation FGP7N60RUFD Units 600 V ± 20 V 14 A 7 A 21 A 12 A 60 A @ TC = 25°C 69 W @ TC = 100°C 28 W @ TC = 100°C TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Typ. Max. Units RθJC(IGBT) Symbol Thermal Resistance, Junction-to-Case Parameter -- 1.8 °C/W RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 3.0 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ©2005 Fairchild Semiconductor Corporation FGP7N60RUFD Rev. A 1 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK 0 October 2006 Device Marking Device Package Packaging Type Qty per Tube FGP7N60RUFD FGP7N60RUFDTU TO-220 Rail / Tube 50ea Electrical Characteristics of the IGBT Symbol Parameter Max Qty per Box - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 3mA -- 0.6 -- V/°C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA 5.0 6.5 8.0 V On Characteristics VGE(th) G-E Threshold Voltage IC = 7mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 7A, VGE = 15V -- 1.95 2.8 V IC = 7A, VGE = 15V, TC = 125°C -- 2.1 -- V IC = 14 A, VGE = 15V -- 2.65 -- V VCE = 30V, VGE = 0V, f = 1MHz -- 510 -- pF -- 55 -- pF -- 15 -- pF -- 60 -- ns -- 60 -- ns -- 60 80 ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time -- 170 280 ns Eon Turn-On Switching Loss -- 0.23 -- mJ Eoff Turn-Off Switching Loss -- 0.10 -- mJ Ets Total Switching Loss -- 0.33 0.5 mJ td(on) Turn-On Delay Time -- 65 -- ns tr Rise Time -- 70 -- ns td(off) Turn-Off Delay Time -- 55 -- ns tf Fall Time -- 350 -- ns Eon Turn-On Switching Loss -- 0.25 -- mJ Eoff Turn-Off Switching Loss -- 0.27 -- mJ Ets Total Switching Loss -- 0.52 -- mJ Qg Total Gate Charge -- 24 36 nC Qge Gate-Emitter Charge Qgc Gate-Collector Charge Le Internal Emitter Inductance FGP7N60RUFD Rev. A VCC = 300 V, IC = 7A, RG = 30Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 7 A, RG =30Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 7A, VGE = 15V Measured 5mm from PKG 2 -- 4 6 nC -- 10 15 nC -- 7.5 -- nH www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Package Marking and Ordering Information C Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time = 25°C unless otherwise noted Test Conditions IF = 7A IF = 7A dI/dt = 200 A/µs Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge FGP7N60RUFD Rev. A 3 Min. Typ. Max. Units TC = 25°C -- 1.65 2.1 V TC = 100°C -- 1.58 -- TC = 25°C -- 50 65 TC = 100°C -- 58 -- TC = 25°C -- 2.5 3.75 TC = 100°C -- 3.3 -- TC = 25°C -- 62.5 122 TC = 100°C -- 95.7 -- ns A nC www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Electrical Characteristics of DIODE T Figure 1. Typical Output Characteristics 40 Figure 2. Typical Saturation Voltage Characteristics 40 o T C = 25 C C o m m o n E m itte r V Ge = 1 5 V 20V 15V o Collector Current, IC [A] 20 10V 10 Tc = 25 C o Tc = 125 C 30 Collector Current, IC[A] 12V 30 20 10 V GE= 8V 0 0 0 2 4 6 8 0 C ollector-Em itter Voltage, V C E [V] Figure 3. Saturation Voltage vs Case Temperature at Variant Current Level 15 Com m om Em itter V GE = 15V Ic = 14 A 3 4 6 8 Figure 4. Load Current vs Frequency Load Current [A] Collector - Emitter Voltage, VCE[V] 4 2 C o lle c to r-E m itte r V o lta g e , V c e [V ] Ic = 7 A 2 Vcc = 300V load Current : peak of square wave 10 5 Ic =3.5 A 1 0 25 50 75 100 125 Duty cycle : 50% o Tc = 100 C Power Dissipation = 14W 0 150 0.1 1 o Case Temperature, Tc [ C] Figure 5. Saturation Voltage vs. Vge 100 1000 Figure 6. Saturation Voltage vs. Vge 10 Common Emitter o T C = 25 C C o m m o n E m itte r o T c = 125 C 8 CE [V] 8 Collector - Emitter Voltage, V Collector - Emitter Voltage, V CE [V] 10 10 Frequency [kHz] 6 4 14A 7A 2 Ic=3.5A 5 FGP7N60RUFD Rev. A 10 15 Gate - Emitter Voltage, V GE [V] 20 6 4 14 A 7A 2 Ic=3.5A 0 5 10 15 20 G ate - E m itter V oltage, V G E [V ] 4 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Typical Performance Characteristics (Continued) Figure 7. Capacitance Characteristics Temperature at Variant Current Level 1000 Figure 8. Turn-On Characteristics vs. Gate Resistance Common Emitter V GE = 0V, f = 1MHz Ton o T C = 25 C 800 Switching Time [ns] Capacitance [pF] Ciss 600 Coss 400 Tr C o m m o n E m itte r V C C = 3 0 0 V , V G E = + /-1 5 V Crss 200 0 100 IC = 7 A o Tc = 25 C o Tc = 125 C 10 1 10 10 Collector-Emitter Voltage, V CE [V] Figure 9. Turn-Off Characteristics vs. Gate Resistance Figure 10. Switching Loss vs. Gate Resistance 600 Com m on Em itter V CC = 300V, V GE = +/-15V 1000 IC = 7 A 400 o Switching Loss [uJ] Switching Time [ns] C o m m o n E m itte r V C C = 3 0 0 V , V G E = + /-1 5 V 500 IC = 7A Tc = 25 C o Tc = 125 C Toff Tf Toff Tf 100 300 E o ff Eon 100 E o ff 100 10 G a te R e s is ta nc e , R G [ Ω ] Figure 11. Turn-On Characteristics vs. Collector Current Figure 12. Turn-Off Characteristics vs. Collector Current 1000 150 Common Emitter V GE = +/-15V, RG=30 Ω 100 Tc = 25 C o Tc = 125 C 800 IC = 7A 600 Ton Switching Time [ns] Switching Time [ns] o Tr 50 Eon 200 100 10 o Tc = 25 C o Tc = 125 C Gate Resistance, R G [Ω ] 200 100 G a te R e sista nce , R G [ Ω ] Com m on Em itter V GE = +/-15V, R G =30 Ω IC = 7A o T c = 25 C o T c = 125 C T off 400 Tf T off 200 4 6 8 10 12 4 14 Collector Current, IC [A] FGP7N60RUFD Rev. A Tf 6 8 10 12 14 Collector C urrent, IC [A] 5 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current 1000 Figure 14. Gate Charge Characteristics 15 Common Emitter V GE = +/-15V, R G=30 Ω Gate-Emitter Voltage, VGE [V] IC = 7A o Switching Loss [uJ] Tc = 25 C o Tc = 125 C Eoff Eon Eoff 100 4 6 8 10 12 Common Emitter R L = 43 ohm o T C = 25 C 200V 300V Vcc = 100V 10 5 0 14 0 Collector Current, IC [A] 4 8 12 16 Gate Charge, Q g [nC] 20 24 Figure 15. SOA Characteristics 100 Collector Current, Ic [A] Ic MAX (Pulsed) 50µs Ic MAX (Continuous) 10 100µs 1ms 1 DC Operation Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 0.01 0.1 1 10 100 1000 Collector - Emitter Voltage, VCE [V] Figure 16. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 1 0 .5 0 .2 0 .1 0 .1 0 .0 5 Pdm 0 .0 2 t1 0 .0 1 t2 s in g le p u ls e 0 .0 1 1 E -5 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e c ta n g u la r P u ls e D u ra tio n [s e c ] FGP7N60RUFD Rev. A 6 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Typical Performance Characteristics (Continued) Figure 17. Forward Voltage Characteristics Figure 18. Reverse Recovery Current Reverse Recovery Current , Irr [A] 3.0 Forward Current , IF [A] 10 o 1 T C = 100 C o T C = 25 C 0.1 0.5 1.0 1.5 2.0 2.5 di/d t=200 A /u s 2.5 2.0 di/dt=10 0A /u s 1.5 1.0 3.0 2 Forward Voltage , VF [V] 6 8 10 12 14 F orw ard C urrent , IF [A ] Figure 19. Stored Charge Figure 20. Reverse Recovery Time 80 60 70 60 Reverse Recovery Time , trr [ns] Reverse Recovery Charge , Qrr [nC] 4 di/dt=200A/us 50 di/dt=100A/us 40 30 2 4 6 8 10 12 di/dt=100A /us 50 40 di/dt=200A /us 30 14 2 Forward Current , IF [A] 4 6 8 10 12 14 Forward C urrent , IF [A] Dimensions in Millimeters FGP7N60RUFD Rev. A 7 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Typical Performance Characteristics TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 (45° 1.52 ±0.10 10.08 ±0.30 13.08 ±0.20 (1.00) ) 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.40 ±0.20 10.00 ±0.20 FGP7N60RUFD Rev. A 8 www.fairchildsemi.com FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Mechanical Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20