FAIRCHILD FGH30N60LSD

FGH30N60LSD
tm
Features
General Description
• Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
The FGH30N60LSD is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors.This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverters
• UPS, Welder
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
FGH30N60LSD
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
@ TC = 25°C
60
A
Collector Current
@ TC = 100°C
30
A
ICM (1)
Pulsed Collector Current
90
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
150
A
PD
Maximum Power Dissipation
@ TC = 25°C
480
W
Maximum Power Dissipation
@ TC = 100°C
192
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction-to-Case
--
0.26
°C/W
RθJC(Diode)
Thermal Resistance, Junction-to-Case
--
0.92
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
©2006 Fairchild Semiconductor Corporation
FGH30N60LSD Rev. A1
1
www.fairchildsemi.com
FGH30N60LSD
August 2007
Device Marking
Device
Package
Packaging
Type
FGH30N60LSD
FGH30N60LSDTU
TO-247
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
--
0.6
--
V/°C
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250uA
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
±250
nA
4.0
5.5
7.0
V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250uA, VCE = VGE
IC = 30A, VGE = 15V
--
1.1
1.4
V
IC = 30A, VGE = 15V,
TC = 125°C
--
1.0
--
V
IC = 60 A, VGE = 15V
--
1.3
--
V
--
3550
--
pF
VCE = 30V, VGE = 0V,
f = 1MHz
--
245
--
pF
--
90
--
pF
18
--
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
--
tr
Rise Time
--
46
--
ns
td(off)
Turn-Off Delay Time
--
250
--
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
td(on)
VCC = 400 V, IC = 30A,
RG = 6.8Ω, VGE = 15V,
Inductive Load, TC = 25°C
--
1.3
2.0
us
--
1.1
--
mJ
Turn-Off Switching Loss
--
21
--
mJ
Turn-On Delay Time
--
17
--
ns
tr
Rise Time
--
45
--
ns
td(off)
Turn-Off Delay Time
--
270
--
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
Le
Internal Emitter Inductance
VCC = 400 V, IC = 30A,
RG =6.8Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 600 V, IC = 30A,
VGE = 15V
Measured 5mm from PKG
2
FGH30N60LSD Rev. A1
--
2.6
--
us
--
1.1
--
mJ
--
36
--
mJ
--
225
--
nC
--
30
--
nC
--
105
--
nC
--
7
--
nH
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FGH30N60LSD
Package Marking and Ordering Information
Parameter
TC = 25°C unless otherwise noted
Min.
Typ.
Max
Units
VFM
IF = 15A
IF = 15A
Conditions
TC = 25 °C
TC = 125 °C
-
1.8
1.6
2.2
-
V
V
IRM
VR = 600V
TC = 25 °C
-
-
100
µA
trr
IF =1A, di/dt = 100A/µs, VCC = 30V
IF =15A, di/dt = 100A/µs, VCC = 390V
TC = 25 °C
TC = 25 °C
-
-
35
40
ns
ns
ta
tb
Qrr
IF =15A, di/dt = 100A/µs, VCC = 390V
TC = 25 °C
TC = 25 °C
TC = 25 °C
-
18
13
27.5
-
ns
ns
nC
3
FGH30N60LSD Rev. A1
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FGH30N60LSD
Electrical Characteristics of the Diode
FGH30N60LSD
Typical Performance Characteristics
Figure 1.Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
90
90
o
60
30
15V
12V
10V
8V
60
30
0
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
4
0
Figure 3. Typical Saturation Voltage
Characteritics
4
90
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
o
TC = 25 C
o
TC = 125 C
60
TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]
1
2
3
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer characteristics
90
o
TC = 125 C
60
30
30
0
0
0
1
2
Collector-Emitter Voltage, VCE [V]
0
3
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2
4
6
8
10
Gate-Emitter Voltage,VGE [V]
12
Figure 6. Saturation Voltage vs. Vge
20
1.4
Common Emitter
VGE = 15V
Common Emitter
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
VGE = 20V
TC = 125 C
15V
12V
10V
8V
Collector Current, IC [A]
Collector Current, IC [A]
o
VGE = 20V
TC = 25 C
60A
1.2
30A
1.0
IC = 15A
0.8
0.6
25
o
T = 25 C
C
16
12
8
4
60A
30A
IC = 15A
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
0
4
FGH30N60LSD Rev. A1
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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(Continued)
Figure 7. Saturation Voltage vs. Vge
20
FGH30N60LSD
Typical Performance Characteristics
Figure 8. Capacitance characteristics
13000
10000
Common Emitter
TC = 125 C
Cies
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
12
8
30A 60A
TC = 25 C
Cres
4
IC = 15A
100
50
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
0
Figure 9. Gate Charge Characteristics
5
10
15
20
25
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteeristics
300
15
Common Emitter
IC = 30A
o
12 TC = 25 C
Ic MAX (Pulsed)
100
Vcc = 100V
9
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
1000
0
300V
200V
6
3
0
0
50
100
150
200
Gate Charge, Qg [nC]
10
1ms
1 Single Nonrepetitive
o
Pulse TC = 25 C
Curves must be derated
linearly with increase
in temperature
DC Operation
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
200
Vcc = 400V
load Current : peak of square wave
100
Switching Time [ns]
60
50
40
30
20
10
100µs
Figure 12. Turn-On Characteristics vs.
Gate Resistance
80
70
50µs
Ic MAX (Continuous)
0.1
0.1
250
Figure 11. Load Current Vs. Frequency
Load Current [A]
Common Emitter
VGE = 0V, f = 1MHz
Coes
tr
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
td(on)
Duty cycle : 50%
o
Tc = 100 C
Powe Dissipation = 192W
0
0.1
1
10
100
Frequency [kHz]
o
TC = 25 C
o
TC = 125 C
10
1000
0
20
30
40
50
Gate Resistance, RG [Ω]
5
FGH30N60LSD Rev. A1
10
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(Continued)
Figure 13. Turn-Off Characteristics vs.
Gate Resistance
Figure 14. Turn-On Characteristics vs.
Collector Current
500
3000
Common Emitter
VGE = 15V, RG = 6.8Ω
o
TC = 25 C
Switching Time [ns]
Switching Time [ns]
o
tf
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
td(off)
TC = 125 C
100
tr
td(on)
10
o
TC = 25 C
o
TC = 125 C
100
0
10
20
30
40
20
50
30
40
Figure 15. Turn-Off Characteristics vs.
Collector Current
60
70
80
Figure 16. Switching Loss vs
Gate Resistance
6000
500
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
Switching Loss [mJ]
tf
Switching Time [ns]
50
Collector Current, IC [A]
Gate Resistance, RG [Ω]
1000
Common Emitter
VGE = 15V, RG = 6.8Ω
o
TC = 25 C
o
td(off)
TC = 125 C
o
100 TC = 25 C
o
Eoff
TC = 125 C
10
Eon
100
20
30
40
50
60
70
1
80
Collector Current, IC [A]
5
10
15
20
25
30
35
40
45
50
Gate Resistance, RG [Ω]
Figure 17.Switching Loss vs Collector Current
Figure 18. Turn-Off Switching
SOA Characteristics
200
100
100
Collector Current, IC [A]
Switching Loss [mJ]
Eoff
10
Eon
1
Common Emitter
VGE = 15V, RG = 6.8Ω
10
o
TC = 25 C
Safe Operating Area
o
VGE = 15V, TC = 125 C
o
TC = 125 C
0.1
10
1
20
30
40
50
60
70
80
1
Collector Current, IC [A]
6
FGH30N60LSD Rev. A1
10
100
1000
Collector-Emitter Voltage, VCE [V]
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FGH30N60LSD
Typical Performance Characteristics
FGH30N60LSD
Figure 19. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5
0.1
0.2
0.1
0.05
0.01
0.02
PDM
t1
0.01
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 20. Typical Forward Voltage Drop
10
Figure 21. Typical Reverse Current
100
1E-4
REVERSE CURRENT, IR [A]
FPRWARD CURRENT, IF [A]
1
10
o
TC=125 C
1
o
TC=75 C
1E-5
o
TC = 125 C
o
1E-6
TC = 75 C
1E-7
o
TC = 25 C
1E-8
o
TC=25 C
0.1
0.0
1E-9
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
FORWARD VOLTAGE, VF [V]
100
200
300
400
500
600
REVERSE VOLTAGE, VR [V]
REVERSE RECOVERY TIME, trr [ns]
Figure 22. Typical Reverse Recovery Time
200
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
100
IF = 15A
o
TC = 125 C
o
TC = 75 C
o
TC = 25 C
200
300
400
500
di/dt [A/µs]
7
FGH30N60LSD Rev. A1
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FGH30N60LSD
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
8
FGH30N60LSD Rev. A1
www.fairchildsemi.com
FGH30N60LSD
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
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OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY
THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to affect
its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
9
FGH30N60LSD Rev. A1
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