IGBT FGH40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • RoHS complaint Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage IC ICM(1) PD Collector Current @TC = 25°C Collector Current @TC = 100°C Pulsed Collector Current FGH40N120AN Units 1200 V ±25 V 64 A 40 A 160 A Maximum Power Dissipation @TC = 25°C 417 W Maximum Power Dissipation @TC = 100°C 167 W 10 µs SCWT Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125°C TJ Operating Junction Temperature -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 seconds 300 °C Notes: (1) Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ©2006 Fairchild Semiconductor Corporation FGH40N120AN Rev. A2 1 www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT July 2008 ® Device Marking Device Package Reel Size Tape Width Quantity FGH40N120AN FGH40N120AN TO-247 - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±250 nA IC = 250µA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 5.5 7.5 V IC = 40A, VGE = 15V -- 2.6 3.2 V IC = 40A, VGE = 15V, TC = 125°C -- 2.9 -- V IC = 64A, VGE = 15V -- 3.15 -- V -- 3200 -- pF -- 370 -- pF -- 125 -- pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz Switching Characteristics td(on) Turn-On Delay Time -- 15 -- ns tr Rise Time -- 20 -- ns td(off) Turn-Off Delay Time -- 110 -- ns tf Fall Time -- 40 80 ns Eon Turn-On Switching Loss -- 2.3 3.45 mJ Eoff Turn-Off Switching Loss -- 1.1 1.65 mJ Ets Total Switching Loss -- 3.4 5.1 mJ td(on) Turn-On Delay Time -- 20 -- ns tr Rise Time -- 25 -- ns td(off) Turn-Off Delay Time -- 120 -- ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss -- 1.8 -- mJ Ets Total Switching Loss -- 4.3 -- mJ Qg Total Gate charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCC = 600V, IC = 40A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 600V, IC = 40A, RG = 5Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 600V, IC = 40A, VGE = 15V 2 FGH40N120AN Rev. A2 -- 45 -- ns -- 2.5 -- mJ -- 220 -- nC -- 25 -- nC -- 130 -- nC www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT Package Marking and Ordering Information FGH40N120AN 1200V NPT IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 300 Figure 2. Typical Saturation Voltage Characteristics 160 TC = 25°C 20V 17V 15V 250 Common Emitter VGE = 15V o TC = 25 C 200 Collector Current, IC [A] Collector Current, IC [A] 120 12V 150 VGE = 10V 100 o TC = 125 C 80 40 50 0 0 0 2 4 6 8 10 0 2 Collector-Emitter Voltage, VCE [V] Figure 4. Load Current vs. Frequency 70 Common Emitter VGE = 15V V CC = 600V load Current : peak of square wave 56 4 80A Load Current [A] Collector-Emitter Voltage, VCE [V] 6 Collector-Emitter Voltage, VCE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 5 4 3 40A 2 IC = 20A 42 28 14 Duty cycle : 50% o T = 100 C C Powe Dissipation = 100W 0 0.1 1 25 50 75 100 125 1 Case Temperature, TC [°C] Figure 5. Saturation Voltage vs. VGE 20 Common Emitter TC = 25°C 16 12 8 80A 4 100 1000 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 10 Frequency [kHz] 40A IC = 20A 0 Common Emitter TC = 125°C 16 12 8 80A 4 40A IC = 20A 0 0 4 8 12 16 20 0 Gate-Emitter Voltage, VGE [V] 8 12 16 20 Gate-Emitter Voltage, VGE [V] 3 FGH40N120AN Rev. A2 4 www.fairchildsemi.com (Continued) Figure 7. Capacitance Characteristics 6000 Figure 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VGE = 0V, f = 1MHz TC = 25°C 5000 100 Switching Time [ns] Capacitance [pF] Ciss 4000 3000 2000 Coss 1000 tr Common Emitter VCC = 600V, VGE = ±15V td(on) IC = 40A Crss TC = 25°C TC = 125°C 10 0 1 0 10 10 20 Figure 9. Turn-Off Characteristics vs. Gate Resistance 50 60 70 Common Emitter VCC = 600V, VGE = ±15V TC = 25°C IC = 40A td(off) TC = 125°C TC = 25°C 10 TC = 125°C Switching Loss [mJ] Switching Time [ns] 40 Figure 10. Switching Loss vs. Gate Resistance Common Emitter VCC = 600V, VGE = ±15V, IC = 40A 1000 30 Gate Resistance, RG [Ω ] Collector-Emitter Voltage, VCE [V] 100 tf Eon Eoff 1 10 0 10 20 30 40 50 60 70 0 10 20 Gate Resistance, RG [Ω] Figure 11. Turn-On Characteristics vs. Collector Current 40 50 60 70 Figure 12. Turn-Off Characteristics vs. Collector Current Common Emitter VGE = ±15V, RG = 5Ω Common Emitter VGE = ±15V, RG = 5Ω 100 30 Gate Resistance, RG [Ω] TC = 25°C TC = 25°C tr TC = 125°C Switching Time [ns] Switching Time [ns] TC = 125°C td(on) td(off) 100 tf 10 20 30 40 50 60 70 20 80 40 50 60 70 80 Collector Current, IC [A] Collector Current, IC [A] 4 FGH40N120AN Rev. A2 30 www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT Typical Performance Characteristics FGH40N120AN 1200V NPT IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics 16 Common Emitter VGE = ±15V, RG = 5Ω TC = 25°C Switching Loss [mJ] Eoff 1 0.1 600V 12 10 400V 8 6 4 2 0 20 30 40 50 60 70 80 0 50 100 Collector Current, IC [A] 500 150 200 250 Gate Charge, Qg [nC] Figure 15. SOA Characteristics Figure 16. Turn-Off SOA IC MAX (Pulse) 10µ s 100 100 100µ s 10 I MAX (Continuous) C Collector Current, IC [A] Collector Current, Ic [A] Vcc = 200V TC = 25°C Eon TC = 125°C Gate-Emitter Voltage, VGE [V] 10 Common Emitter RL = 15Ω 14 1ms 10 ms 1 DC Operation *Notes: 0.1 o 1. TC = 25 C 10 o 2. TJ = 150 C 3. Single Pulse 0.01 Safe Operating Area o VGE = 15V, TC = 125 C 1 1 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 17. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 PDM 0.01 0.02 t1 0.01 t2 single pulse 1E-3 1E-5 1E-4 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] 5 FGH40N120AN Rev. A2 www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT Mechanical Dimensions TO-247AB (FKS PKG CODE 001) Dimensions in Millimeters 6 FGH40N120AN Rev. A2 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 7 FGH40N120AN Rev. A2 www.fairchildsemi.com FGH40N120AN 1200V NPT IGBT TRADEMARKS