SST SST11LP12_10

4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
SST1LP124.9-5.8 GHz High-Linearity Power Amplifier
FEATURES:
• High gain
• High linear output power:
– Meets 802.11a OFDM Spectrum Mask requirement up to 24 dBm over the entire band
– Added EVM <4% up to 21 dBm for
54 Mbps 802.11a signal
• High power-added efficiency/Low operating
current for 6 Mbps 802.11a applications
– ~17% @ POUT = 23 dBm for 6 Mbps
• Built-in Ultra-low IREF power-up/down control
– IREF <3 mA
• Low idle current
– ~150 mA ICQ
• High speed power up/down
– Turn on/off time (10%~90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
•
•
•
•
•
•
High temperature stability
Low shut-down current (~2 µA)
On-chip power detection
20 dB dynamic range on-chip power detection
Simple input/output matching
Packages available
– 16-contact WQFN (3mm x 3mm)
– Non-Pb (lead-free) packages available
APPLICATIONS:
•
•
•
•
WLAN (IEEE 802.11a)
Japan WLAN
HyperLAN2
Multimedia
PRODUCT DESCRIPTION
The SST11LP12 is a high-power, high-gain power amplifier
based on the highly-reliable InGaP/GaAs HBT technology.
The SST11LP12 can be easily configured for high-power,
high-efficiency applications with superb power-added efficiency while operating over the entire 802.11a frequency
band for U.S., European, and Japanese markets (4.9-5.8
GHz).
The SST11LP12 has excellent linearity, typically <4%
added EVM at 21 dBm output power which is essential for
54 Mbps 802.11a operation while meeting 802.11a spectrum mask at 24 dBm. SST11LP12 also has wide-range
(>20 dB), temperature-stable (~1 dB over 85°C), singleended/differential power detectors which lower users’ cost
on power control.
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1
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control. Ultralow reference current (total IREF <3 mA) makes the
SST11LP12 controllable by an on/off switching signal
directly from the baseband chip. These features coupled
with low operating current make the SST11LP12 ideal for
the final stage power amplification in battery-powered
802.11a WLAN transmitter and access point applications.
The SST11LP12 is offered in 16-contact WQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
VCC1
VCC2
VCC3
NC
FUNCTIONAL BLOCKS
16
15
14
13
NC
1
12 NC
RFIN
2
11 RFOUT
RFIN
3
10 RFOUT
VCCb
4
Bias Circuit
5
6
7
8
NC
VREF
VREF
Det_ref
9
Det
1278 B1.1
FIGURE 1: Functional Block Diagram
©2010 Silicon Storage Technology, Inc.
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4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
NC
VCC1
VCC2
VCC3
NC
PIN ASSIGNMENTS
16
15
14
13
12 NC
1
Top View
VCCb
4
11 RFOUT
10 RFOUT
RF and DC GND
0
9 Det
5
6
7
8
Det_ref
3
VREF
RFIN
(contacts facing down)
VREF
2
NC
RFIN
1278 16-wqfn P1.0
FIGURE 2: Pin Assignments for 16-contact WQFN
PIN DESCRIPTIONS
TABLE 1: Pin Description
Symbol
Pin No.
Pin Name
Type1
Function
GND
0
Ground
The center pad should be connected to RF ground
with several low inductance, low resistance vias.
NC
1
No Connection
Unconnected pin
RFIN
2
I
RF input, DC decoupled
RFIN
3
I
RF input, DC decoupled
VCCb
4
Power Supply
NC
5
No Connection
VREF
6
PWR
Current Control
VREF
7
PWR
Current Control
PWR
Supply voltage for bias circuit
Unconnected pin
Det_ref
8
O
On-chip power detector reference
Det
9
O
On-chip power detector
RFOUT
10
O
RF output
RFOUT
11
O
RF output
NC
12
No Connection
Unconnected pin
NC
13
No Connection
Unconnected pin
VCC3
14
Power Supply
PWR
Power supply, 3rd stage
VCC2
15
Power Supply
PWR
Power supply, 2nd stage
VCC1
16
Power Supply
PWR
Power supply, 1st stage
T1.1 1278
1. I=Input, O=Output
©2010 Silicon Storage Technology, Inc.
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4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 3 through 8 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Supply Voltage at pins 4, 14, 15, 16 (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.8V
DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
OPERATING RANGE
Range
Ambient Temp
VCC
Industrial
-40°C to +85°C
3.3V
TABLE 2: DC Electrical Characteristics
Symbol
Parameter
VCC
Supply Voltage at pins 4, 14, 15, 16
Min.
Typ
Max.
Unit
2.7
3.3
3.6
V
400
mA
ICC
Supply Current @ POUT = 23 dBm at VCC = 3.3V
ICQ
VCC quiescent current
150
IOFF
Shut down current
<1.0
VREG
Reference Voltage for recommended application
2.85
Test Conditions
mA
µA
3.0
V
T2.0 1278
©2010 Silicon Storage Technology, Inc.
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4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
TABLE 3: AC Electrical Characteristics for Configuration1
Symbol
Parameter
Min
FL-U
Frequency range
4.9
Linearity
G
Typ
Max
5.8
Unit
GHz
Output power with <4% EVM at
54 Mbps OFDM signal when operating at 3.3V VCC
21
dBm
Output power level with 802.11a mask compliance
across 4.9-5.8 GHz
23
dBm
Gain over band (4.9-5.1 MHz)
33
dB
Gain over band (5.3-5.5 MHz)
31
dB
Gain over band (5.7-5.8 MHz)
27
Det
Power detector output voltage range
0.5
Det_ref
Power detector output reference
0.5
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without trapping capacitors
dB
2.0
V
0.6
V
-50
dBc
T3.1 1278
1. Performance is only valid using the recommended schematic. VCC = 3.3V, VREG = 2.85, Temperature = 25ºC
©2010 Silicon Storage Technology, Inc.
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4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
Test Conditions: VCC = 3.3V, TA = 25°C, VREG1,2 = 2.85V unless otherwise noted
S12 versus Frequency
0
0
-5
-10
-10
-20
-15
-30
S12 (dB)
S11 (dB)
S11 versus Frequency
-20
-25
-40
-50
-30
-60
-35
-70
-40
-80
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0
Frequency (GHz)
Frequency (GHz)
S22 versus Frequency
40
0
30
-5
20
-10
10
-15
S22 (dB)
S21 (dB)
S21 versus Frequency
0
-10
-20
-25
-20
-30
-30
-35
-40
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0
-40
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0
Frequency (GHz)
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0
Frequency (GHz)
1278 S-Parms.0.1
FIGURE 3: S-Parameters
©2010 Silicon Storage Technology, Inc.
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4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
Test Conditions: VCC = 3.3V, TA = 25°C, VREG = 2.85V unless otherwise specified
EVM for 54 Mbps operation
EVM versus Output Power
10
EVM (%)
9
8
4.920 GHz
7
5.180 GHz
6
5.500 GHz
5.805 GHz
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
1278 F4.1
FIGURE 4: EVM versus Output Power
Supply Current (mA)
Supply Current versus Output Power
410
400
390
380
370
360
350
340
330
320
310
300
290
280
270
260
250
240
230
220
210
200
190
180
170
160
150
140
130
120
4.920 GHz
5.180 GHz
5.500 GHz
5.805 GHz
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
1278 F5.2
FIGURE 5: Power Supply Current versus Output Power
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4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
Detector Voltage versus Output Power
1.70
1.60
Detector Voltage (V)
1.50
1.40
1.30
1.20
1.10
1.00
0.90
4.920 GHz
0.80
5.500 GHz
0.70
5.500 GHz
0.60
5.805 GHz
0.50
0.40
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
1278 F6.2
FIGURE 6: Detector Voltage versus Output Power
Power Gain versus Output Power
36
34
Power Gain (dB)
32
30
28
26
24
4.920 GHz
22
5.180 GHz
20
5.500 GHz
5.805 GHz
18
16
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm)
1278 F7.2
FIGURE 7: Power Gain versus Output Power
©2010 Silicon Storage Technology, Inc.
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4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
PAE (%)
PAE versus Output Power
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
4.920 GHz
5.180 GHz
5.500 GHz
5.805 GHz
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Output Power (dBm)
23
24
1278 F9.0
FIGURE 8: PAE versus Output Power
TABLE 4: 802.11a 6Mbps OFDM Mask Compliance Power
Frequency (GHz)
802.11a 6Mbps OFDM Mask Compliance Power (dBm)
4.920
24
5.180
23.8
5.500
23.5
5.805
23
T4.0 1278
©2010 Silicon Storage Technology, Inc.
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4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
VCC
25Ω
10 µF
3.3 pF
0-20 mil
0.1 µF
0.1 µF
0.1 µF
16
50Ω
15
14
13
1
12
2
11
0.1 pF **
50Ω
80 mil/60 mil
RFin
10
3
0.3 pF*
RFOUT
0.4 pF **
Bias Circuit
9
4
0.1 µF
Test Conditions
5
6
7
10 pF
8
VREG = 2.85V
VCC=3.3V
0Ω
* Distance from the edge of the package
to the edge of the 0.3 pF capacitor = 40 mil
**Distance from the edge of the output patch
to the edge of the 0.1 pF /0.4 pF capacitors
= 40 mil
10 pF
100 pF
Det_ref
Det
1278 Schematic.0.5
VREF
FIGURE 9: Recommended Schematic for High-Power 802.11a Application
©2010 Silicon Storage Technology, Inc.
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4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
PRODUCT ORDERING INFORMATION
SST11LP
SSTXXLP
12
XX
-
QC
XX
F
X
Environmental Attribute
F1 = non-Pb / non-Sn contact (lead) finish:
Nickel plating with Gold top (outer) layer
Package Modifier
C = 16 contact
Package Type
Q = WQFN
Product Family Identifier
Product Type
P = Power Amplifier
Voltage
L = 3.0-3.6V
Frequency of Operation
1 = 4.9-5.8 GHz
Product Line
1 = SST Communications
1. Environmental suffix “F” denotes non-Pb/non-Sn solder.
SST non-Pb/non-Sn solder devices are “RoHS Compliant”.
Valid combinations for SST11LP12
SST11LP12-QCF
SST11LP12 Evaluation Kits
SST11LP12-QCF-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
©2010 Silicon Storage Technology, Inc.
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4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
PACKAGING DIAGRAMS
TOP VIEW
SIDE VIEW
BOTTOM VIEW
See notes
2 and 3
0.2
Pin 1
Pin 1
1.7
3.00
0.075
1.7
0.5 BSC
0.075
3.00
0.075
0.45
0.35
0.05 Max
0.80
0.70
0.30
0.18
1mm
16-wqfn-3x3-QC-0.3
Note: 1. Complies with JEDEC JEP95 MO-220J, variant WEED-4 except external paddle nominal dimensions.
2. From the bottom view, the pin 1 indicator ma y be either a 45-degree chamfer or a half-circle notch.
3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads.
This paddle can be soldered to the PC board it is suggested to connect this paddle to the VSS of the unit.
Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device.
4. Untoleranced dimensions are nominal target dimensions.
5. All linear dimensions are in millimeters (max/min).
FIGURE 10: 16-contact Very-thin Quad Flat No-lead (WQFN)
SST Package Code: QC
TABLE 5: Revision History
Revision
00
01
Description
•
•
•
03
•
•
•
•
•
•
04
•
•
02
Date
S71278: SST conversion of data sheet GP1112
Corrected the spectrum mask value in “Product Description” on page 1 to read
802.11a
Corrected the solder reflow temperature under “Absolute Maximum Stress Ratings”
on page 4
Updated sales and marketing contact information
Changed VQFN to WQFN
Updated Product Ordering information
Updated Table 3 on page 5.
Updated document status from Preliminary Specifications to Data Sheet
Revised gain values in “Features:” and “Product Description” on page 1 and in
Table 3 on page 5
Updated “” on page 12
Updated Features, Table 2, Table 3, Table 4, and Figures 4-9 to indicate improved
RF performance.
Jan 2005
Jan 2006
Mar 2008
Feb 2009
Dec 2010
Silicon Storage Technology, Inc.
www.SuperFlash.com or www.sst.com
©2010 Silicon Storage Technology, Inc.
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