2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet SST12LP20 is a RF-matched power amplifier module based on the highly-reliable InGaP/GaAs HBT technology. This amplifier includes DC blocks and provides both input and output match to 50Ω. Operating over the 2.4–2.5 GHz frequency band, the amplifier typically provides 30 dB gain with 28% power-added efficiency at 21 dBm. SST12LP20 has excellent linearity with typically 18 dBm at 3% EVM for 54 Mbps 802.11g modulation, while meeting 802.11g spectrum mask at 21 dBm. It requires only two external bias components, and features easy board-level usage, along with high-speed power-up/down control through a single combined reference voltage pin. SST12LP20 is offered in an 8-contact USON package. Features • High gain: • Small variation over temperature – Typically 30 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C and 29 dB gain from -40°C to 0°C • High linear output power: – >24 dBm P1dB - Single-tone measurement. Please refer to “Absolute Maximum Stress Ratings” on page 5 – Meets 802.11g OFDM ACPR requirement up to 21 dBm – ~3% added EVM up to 18 dBm for 54 Mbps 802.11g signal 802.11n HT20 ACPR requirement up to 18 dBm – Meets 802.11b ACPR requirement up to 21 dBm • High power-added efficiency/Low operating current for 802.11b/g/n applications – ~1 dB gain/power variation between 0°C to +85°C • Excellent on-chip power detection – >15 dB dynamic range, dB-wise Linear Temperature stable and load insensitive • Input port matched to 50Ω internally • Both input and output ports are DC decoupled. • Packages available – 8-contact USON – 2mm x 2mm x 0.55mm • All non-Pb (lead-free) devices are RoHS compliant – ~28%/138 mA @ POUT = 21 dBm for 802.11b/g • Single-pin low IREF power-up/down control Applications – IREF <2 mA • Low idle current • WLAN (IEEE 802.11b/g/n) – ~78 mA ICQ • Home RF • High-speed power-up/down – Turn on/off time (10%- 90%) <100 ns – Typical power-up/down delay with driver delay included <200 ns • Cordless phones • 2.4 GHz ISM wireless equipment • Low shut-down current (~2 µA) ©2013 Silicon Storage Technology, Inc. www.microchip.com DS70005049C 05/13 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Product Description SST12LP20 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The device’s input and output ports are matched to 50Ω internally. Both input and output ports are DCdecoupled and do not require DC-blocking capacitors. This helps reduce the system board’s Bill of Materials (BOM) cost. The SST12LP20 is a 2.4 GHz high-efficiency Power Amplifier designed in compliance with IEEE 802.11b/g/n applications. It typically provides 30 dB gain with 28% power-added efficiency (PAE) @ POUT = 21 dBm for 802.11b/g. The SST12LP20 has excellent linearity, typically ~3% added EVM at 18 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 21 dBm and 802.11b spectrum mask at 21 dBm. The SST12LP20 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP20 controllable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating current, make the SST12LP20 ideal for the final stage power amplification in battery-powered 802.11b/g/n WLAN transmitter applications. The SST12LP20 has an excellent on-chip, single-ended power detector, which features wide-range (>15 dB) with dB-wise linear. The excellent on-chip power detector provides a reliable solution to board-level power control. The SST12LP20 is offered in 8-contact USON package. See Figure 2 for pin assignments and Table 1 for pin descriptions. ©2013 Silicon Storage Technology, Inc. DS70005049C 2 05/13 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Functional Blocks RFIN 1 8 VREF DNU 2 7 DET DNU 3 6 VCC1 RFOUT 4 5 VCC2 Bias Circuit 1427 B1.1 Figure 1: Functional Block Diagram ©2013 Silicon Storage Technology, Inc. DS70005049C 3 05/13 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Pin Assignments RFIN 1 DNU 2 DNU 3 RFOUT 4 Top View (Contacts facing down) RF and DC GND 0 8 VREF 7 DET 6 VCC1 5 VCC2 1427 P1.0 Figure 2: Pin Assignments for 8-contact USON Pin Descriptions Table 1: Pin Description Symbol Pin No. Type1 Pin Name Ground Function GND 0 Low inductance ground pad RFIN 1 DNU 2 Do Not Use Do not use or connect DNU 3 Do Not Use Do not use or connect I O RF input, DC decoupled RFOUT 4 VCC2 5 Power Supply PWR Power Supply, 2nd stage RF output, DC decoupled VCC1 6 Power Supply PWR Power Supply, 1st stage DET 7 O On-chip power detector VREF 8 PWR 1st and 2nd stage idle current control T1.0 75049 1. I=Input, O=Output ©2013 Silicon Storage Technology, Inc. DS70005049C 4 05/13 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Electrical Specifications The RF and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and current specifications, Table 4 for RF specifications, and Figures 3 through 8 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure beyond absolute maximum stress rating conditions may affect device reliability.) Input power to pin 1 (PIN). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm Average output power from pin 4 (POUT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +25.5 dBm Supply Voltage at pins 5 and 6(VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.8V Reference voltage to pin 8 (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.0V DC supply current (ICC)2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mA Operating Temperature (TA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC Maximum Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150ºC Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds 1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating of average output power could cause permanent damage to the device. 2. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal Table 2: Operating Range Range Ambient Temp VDD Industrial -40°C to +85°C 3.3V T2.1 75049 Table 3: DC Electrical Characteristics at 25°C Symbol Parameter Min. Typ Max. Unit 3.0 3.3 4.2 V VCC Supply Voltage at pins 5 and 6 ICQ Idle current to meet EVM ~3% @ 18 dBm Output Power, 802.11g OFDM 54 Mbps signal VREG Reference Voltage for pin 8 ICC Current consumption to meet 802.11g OFDM 54 Mbps spectrum mask @ 21 dBm 140 mA Current consumption to meet 802.11b DSSS 54 Mbps spectrum mask @ 21 dBm 140 mA Current consumption to meet EVM ~3% @ 18 dBm Output Power with 802.11g OFDM 54 Mbps signal 110 mA 75 3.05 mA 3.10 3.15 V T3.1 75049 ©2013 Silicon Storage Technology, Inc. DS70005049C 5 05/13 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Table 4: RF Characteristics at 25°C Symbol Parameter Min. FL-U Frequency range 2412 G Small signal gain 28 GVAR1 Gain variation over band (2412–2484 MHz) Typ Max. Unit 2484 MHz 30 dB ±0.5 dB GVAR2 Gain ripple over channel (20 MHz) 0.2 dB 2f, 3f, 4f, 5f Harmonics at 22 dBm, without external filters -25 dBc EVM Added EVM @ 18 dBm output with 802.11g OFDM 54 Mbps signal 3 % POUT Output Power to meet 802.11g OFDM 54 Mbps spectrum mask 20 21 dBm Output Power to meet 802.11b DSSS 1 Mbps spectrum mask 20 21 dBm Output Power to meet 802.11n HT20 65 Mbps spectrum mask 18 20 dBm T4.2 75049 ©2013 Silicon Storage Technology, Inc. DS70005049C 6 05/13 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Typical Performance Characteristics Test Conditions: VCC = 3.3V, TA = 25°C, unless otherwise specified S12 versus Frequency S11 versus Frequency 0 0 -10 -5 -20 S12 (dB) S11 (dB) -10 -15 -30 -40 -50 -20 -60 -25 -30 0.0 -70 -80 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 1.0 2.0 Frequency (GHz) 3.0 4.0 5.0 6.0 7.0 8.0 7.0 8.0 Frequency (GHz) S22 versus Frequency S21 versus Frequency 40 0 30 -5 -10 10 S22 (dB) S21 (dB) 20 0 -10 -15 -20 -20 -25 -30 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -30 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) Frequency (GHz) 1427 S-Parms.1.1 Figure 3: S-Parameters ©2013 Silicon Storage Technology, Inc. DS70005049C 7 05/13 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Typical Performance Characteristics Test Conditions: VCC = 3.3V, TA = 25°C, 54 Mbps 802.11g OFDM Signal EVM versus Output Power EVM (%) 10 9 Freq=2.412 GHz 8 Freq=2.442 GHz 7 Freq=2.472 GHz 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1427 F4.1 Figure 4: EVM versus Output Power measured with Equalizer Channel Estimation set to “Sequence Only” Power Gain versus Output Power Power Gain (dB) 40 38 Freq=2.412 GHz 36 Freq=2.442 GHz 34 Freq=2.472 GHz 32 30 28 26 24 22 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1427 F5.1 Figure 5: Power Gain versus Output Power ©2013 Silicon Storage Technology, Inc. DS70005049C 8 05/13 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Supply Current (mA) Supply Current versus Output Power 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 Freq=2.412 GHz Freq=2.442 GHz Freq=2.472 GHz 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1427 F6.1 Figure 6: Total Current Consumption for 802.11g operation versus Output Power PAE (%) PAE versus Output Power 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Freq=2.412 GHz Freq=2.442 GHz Freq=2.472 GHz 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1427 F7.1 Figure 7: PAE versus Output Power ©2013 Silicon Storage Technology, Inc. DS70005049C 9 05/13 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Detector Voltage versus Output Power Detector Voltage (V) 1.2 1.1 Freq=2.412 GHz 1.0 Freq=2.442 GHz 0.9 Freq=2.472 GHz 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1427 F8.1 Figure 8: Detector Characteristics versus Output Power 50Ω RFIN 1 2 3 12LP20 2X2 8L USON Top View 8 VREG 7 VDET 6 50Ω RFOUT 4 5 VCC 1 nH 4.7µF 1427 F9.1 Figure 9: Typical Schematic for High-Efficiency 802.11b/g Applications ©2013 Silicon Storage Technology, Inc. DS70005049C 10 05/13 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Product Ordering Information SST 12 LP 20 - QUAE XX XX XX - XXXX Environmental Attribute E1 = non-Pb contact (lead) finish Package Modifier A = 8 contact Package Type QU= USON Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = RF Products 1. Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant”. Valid combinations for SST12LP20 SST12LP20-QUAE SST12LP20 Evaluation Kits SST12LP20-QUAE-K Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2013 Silicon Storage Technology, Inc. DS70005049C 11 05/13 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Packaging Diagrams TOP VIEW SIDE VIEW BOTTOM VIEW 1.55 2.00 ±0.10 Pin #1 (laser engraved see note 2) See notes 2 and 3 Pin # 1 1.60 2.00 ±0.10 0.50 BSC 0.08 0.75 0.2 0.05 Max 0.3 0.60 0.50 1mm 8-xson-2x2-QUA-2.0 Note: 1. Similar to JEDEC JEP95 UQFN/USON variants, though number of contacts and some dimensions are different. 2. The topside pin #1 indicator is laser engraved; its approximate shape and location is as shown. 3. The external paddle is electrically connected to the die back-side and to VSS. This paddle must be soldered to the PC board; it is required to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). Figure 10:8-Contact Ultra-thin Small Outline No-lead (USON) SST Package Code: QUA ©2013 Silicon Storage Technology, Inc. DS70005049C 12 05/13 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP20 Data Sheet Table 5:Revision History Revision Description Date 00 • Initial release of data sheet May 2010 A • • • • • • Revised “Features” on page 1 and “Product Description” on page 2 Updated Figure 1 and Figures 3-9 Modified Tables 3 and 4 Applied new document format Released document under letter revision system Updated Spec number from S71427 to DS75049 Jan 2012 B • Revised maximum Reference voltage from 3.3V to 4.0V in “Absolute Maximum Stress Ratings” on page 5 Updated Figure 10 on page 12 Apr 2012 Changed the document status from “Preliminary Specification” to “Data Sheet” May 2013 • C • ISBN:978-1-62077-210-2 © 2013 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and registered trademarks mentioned herein are the property of their respective owners. Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging. Memory sizes denote raw storage capacity; actual usable capacity may be less. SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office locations and information, please see www.microchip.com. Silicon Storage Technology, Inc. A Microchip Technology Company www.microchip.com ©2013 Silicon Storage Technology, Inc. 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