FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –4.5 A, –20 V RDS(ON) = 0.053 Ω @ VGS = –4.5 V RDS(ON) = 0.080 Ω @ VGS = –2.5 V • Rugged gate rating (±12V) • Fast switching speed Applications • High performance trench technology for extremely low RDS(ON) • Battery management • Load switch • Battery protection D D S SuperSOT TM-6 D D 6 2 5 3 4 G Absolute Maximum Ratings Symbol 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current –4.5 A – Continuous (Note 1a) – Pulsed PD –20 Maximum Power Dissipation TJ, TSTG (Note 1a) 1.6 (Note 1b) 0.8 W –55 to +150 °C (Note 1a) 78 °C/W (Note 1) 30 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .640 FDC640P 7’’ 8mm 3000 units 2001 Fairchild Semiconductor International FDC640P Rev E(W) FDC640P January 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –14 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA On Characteristics –20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C 3 0.039 0.062 0.053 ID(on) On–State Drain Current VGS = –4.5 V, ID = –4.5 A ID = –3.6 A VGS = –2.5 V, VGS = –4.5 V, ID = –4.5A,TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –4.5 A VDS = –10 V, f = 1.0 MHz V GS = 0 V, –0.6 –1.0 –1.5 V mV/°C 0.053 0.080 0.077 –20 Ω A 16 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) 890 pF 244 pF 123 pF (Note 2) 12 22 9 18 ns Turn–Off Delay Time 24 38 ns tf Turn–Off Fall Time 13 23 ns Qg Total Gate Charge 9 13 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = –10 V, VGS = –4.5 V, VDS = –10 V, VGS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –4.5 A, ns 2 nC 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.3 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board. b. 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDC640P Rev E(W) FDC640P Electrical Characteristics FDC640P Typical Characteristics 3 15 -3.0V -ID, DRAIN CURRENT (A) -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -2.5V 12 9 6 -2.0V 3 VGS = -2.0V 2.5 2 -2.5V 1.5 -3.0V -3.5V 0 0.5 1 1.5 2 0 2.5 3 6 9 12 15 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.16 1.5 ID = -2.25 A ID = -4.5 A VGS = -4.5 V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.5V 0.5 0 1.3 1.2 1.1 1 0.9 0.8 0.7 0.14 0.12 0.1 TA = 125oC 0.08 0.06 TA = 25oC 0.04 0.02 -50 -25 0 25 50 75 100 125 150 1.5 2 o 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = -5V TA = -55oC -IS, REVERSE DRAIN CURRENT (A) 12 25oC 10 -ID, DRAIN CURRENT (A) -4.0V 1 125oC 8 6 4 2 VGS = 0V 1 TA = 125oC 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC640P Rev E(W) FDC640P Typical Characteristics 1200 VDS = -5V ID = -4.5A -10V -15V 3 2 1 CISS 800 600 400 COSS 200 CRSS 0 0 0 2 4 6 8 10 0 12 5 Figure 7. Gate Charge Characteristics. 15 20 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 5 100µs RDS(ON) LIMIT 1ms 10ms 100ms 10 1s 1 10s DC VGS = -4.5V SINGLE PULSE RθJA = 156oC/W 0.1 TA = 25oC 0.01 SINGLE PULSE RθJA = 156°C/W TA = 25°C 4 3 2 1 0 0.1 1 10 100 0.1 1 -VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) -ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V 1000 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 156°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design. FDC640P Rev E(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G